BC817-40W
Abstract: BC817-16W BC817-25W bc817-16 diodes inc marking k6B
Text: SPICE MODELS: BC817-16W BC817-25W BC817-40W BC817-16W / -25W / -40W Lead-free Green NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications
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BC817-16W
BC817-25W
BC817-40W
OT-323
BC807-xxW)
DS30575
BC817-40W
bc817-16 diodes inc
marking k6B
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marking code K6B
Abstract: bc817-40w DS30575 2 x 40w amplifier
Text: SPICE MODELS: BC817-16W BC817-25W BC817-40W BC817-16W / -25W / -40W Lead-free Green NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR NEW PRODUCT Features • · · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications
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BC817-16W
BC817-25W
BC817-40W
BC807-xxW)
OT-323
DS30575
marking code K6B
bc817-40w
2 x 40w amplifier
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VK200 rfc
Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.
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NTE320/NTE320F
175MHz
NTE320
NTE320F
300MHz.
175MHz
NTE320
NTE320F
1000pF
100pF
VK200 rfc
vk200
vk200* FERROXCUBE
vk200 rfc with 6 turns
T72 5VDC
vk200-20
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40w amplifier
Abstract: 2sc3438 mitsubishi vcb 25M SC-62
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3438 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3438 is a silicon NPN epitaxial type transistor designed for OUTLINE DRAWING unit mm power supply, 20 to 40W output low frequency power amplifier drive application.
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2SC3438
2SC3438
2SA1368.
800mA)
130MHz
500mW
SC-62
40w amplifier
mitsubishi vcb
25M SC-62
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2SC4688
Abstract: 2SA1803
Text: SavantIC Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC4688
2SA1803
2SC4688
2SA1803
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NTE477
Abstract: No abstract text available
Text: NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz
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NTE477
NTE477
175MHz
175MHz,
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2SC3180
Abstract: 2SA1263
Text: SavantIC Semiconductor Product Specification 2SC3180 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1263 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC3180
2SA1263
2SC3180
2SA1263
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2SA1803
Abstract: 2SC4688
Text: Product Specification www.jmnic.com 2SC4688 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SA1803 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC4688
2SA1803
2SA1803
2SC4688
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2SC4688
Abstract: 2SA1803
Text: Inchange Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1803 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC4688
2SA1803
2SC4688
2SA1803
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2sc3180n
Abstract: 2SA1263N 2SC3180 2SC3180N equivalent
Text: SavantIC Semiconductor Product Specification 2SC3180N Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1263N APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC3180N
2SA1263N
2sc3180n
2SA1263N
2SC3180
2SC3180N equivalent
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2SC5196
Abstract: 2SA1939
Text: SavantIC Semiconductor Product Specification 2SC5196 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC5196
2SA1939
2SC5196
2SA1939
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2SC3180N
Abstract: 2SA1263N 2SC3180N equivalent 2SC318
Text: Inchange Semiconductor Product Specification 2SC3180N Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1263N APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage
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2SC3180N
2SA1263N
2SC3180N
2SA1263N
2SC3180N equivalent
2SC318
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2SC1863
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25 APPLICATIONS ·Designed for general-purpose amplifier and switching applications
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2SC1863
100mA
2SC1863
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2SC1828
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=1A ·Power dissipation –PC=40W @TC=25 APPLICATIONS ·For power amplifier applications PINNING See Fig.2
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2SC1828
2SC1828
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR T E C H N IC A L D A T A KIA8260AH BIPOLAR LINEAR INTEGRATED CIRCUIT MAX POWER 40W QUAD BTL AUDIO POWER AMPLIFIER The KIA8260AH is 4ch BTL audio power amplifier for car audio application. This IC can generate more high power : P outMAX=40W as it is included the pure complementary PNP and NPN
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KIA8260AH
KIA8260AH
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2SD896
Abstract: 2SB776
Text: SavantIC Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SB776 ·Wide area of safe operation APPLICATIONS ·100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base
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2SD896
2SB776
00V/7A,
2SD896
2SB776
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2SC1863
Abstract: 2SC186
Text: Inchange Semiconductor Product Specification 2SC1863 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·Designed for general-purpose amplifier and switching applications
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2SC1863
100mA
2SC1863
2SC186
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2sd896
Abstract: 2SB776 2SB77
Text: Inchange Semiconductor Product Specification 2SD896 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SB776 ·Wide area of safe operation APPLICATIONS ·100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base
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2SD896
2SB776
00V/7A,
2sd896
2SB776
2SB77
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2SC1828
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC1828 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=1A ·Power dissipation –PC=40W @TC=25℃ APPLICATIONS ·For power amplifier applications PINNING See Fig.2
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2SC1828
2SC1828
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2SD1893
Abstract: 2SB1253 2SD1893 equivalent
Text: SavantIC Semiconductor Product Specification 2SD1893 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1253 APPLICATIONS ·Power amplification ·Optimum for 40W high-fidelity output
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2SD1893
2SB1253
2SD1893
2SB1253
2SD1893 equivalent
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2SC1504
Abstract: 2sc150 2SC15-0 npn transistors 400V 1A
Text: Inchange Semiconductor Product Specification 2SC1504 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=40W @TC=25℃ APPLICATIONS ·High speed switching and linear amplification ·Switching regulators ,converters
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2SC1504
2SC1504
2sc150
2SC15-0
npn transistors 400V 1A
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2SC1504
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC1504 Silicon NPN Power Transistors DESCRIPTION With TO-66 package •Continuous collector current-IC=2A ·Power dissipation -PD=40W @TC=25 · APPLICATIONS ·High speed switching and linear amplification ·Switching regulators ,converters
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2SC1504
2SC1504
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NTE480
Abstract: transistor 38W
Text: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.
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NTE480
512MHz
NTE480
512MHz
470MHz
transistor 38W
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Untitled
Abstract: No abstract text available
Text: KSD363 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage V Cao=300V • Collector Current lc=6A • Collector Dissipation Pc=40W Tc=25t." ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage
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KSD363
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