Q65110A6458
Abstract: GPLY7036
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen im Automobilbereich / not for new designs in automotive applications Vorläufige Daten / Preliminary Data Wesentliche Merkmale
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SFH3010
Abstract: GPLY7036 3010 IF OHPY3832
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen im Automobilbereich / not for new designs in automotive applications Vorläufige Daten / Preliminary Data Wesentliche Merkmale
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gply7036
Abstract: No abstract text available
Text: 2008-10-17 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 not for new design in automotive applications SFH 3010 Features: Besondere Merkmale: • Spectral range of sensitivity: 420 . 1100 nm • Package: SmartLED (SCD 80), Epoxy, colourless,
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D-93055
gply7036
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Marking Code Sorted by Type
Abstract: fototransistor led GPLY6089 OHPY1301
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse (SCD 80): (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Für Neuentwicklungen / for new designs Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse: (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Für Neuentwicklungen / for new designs Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse: (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3010 Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse SCD 80 : (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1100 nm • großer Empfangswinkel ±80°
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Q62702-P5555
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen / not for new designs Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse: (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich
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P555
Abstract: GPLY6089
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3010 Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse SCD 80 : (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1100 nm • großer Empfangswinkel ±80°
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 3010 Nicht für Neuentwicklungen / not for new designs Wesentliche Merkmale Features • Sehr kleines SMT-Gehäuse: (LxBxH) 1,7 mm x 0,8 mm x 0,65 mm • Speziell geeignet für Anwendungen im Bereich
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Q65110A2652
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MLV12-8-H
Abstract: IR Sensor transmitter and receiver pair MLV12-8-H-250 H160 VR10 MLV12 ir transmitter led 880nm sensors with response time 0.5ms MLV12-54-G
Text: Photoelectric Sensors MLV12 Series Dura-VueTM Sensors • High-visibility, dual-position indicator LEDs • Thru-hole or dovetail mounting • Extreme low-temperature operation -40ºC/F available 4 output options from 1 sensor: NPN normally open, NPN normally
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MLV12
250mm
450mm,
OMH-06
MLV12-8-H
IR Sensor transmitter and receiver pair
MLV12-8-H-250
H160
VR10
ir transmitter led 880nm
sensors with response time 0.5ms
MLV12-54-G
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IR Sensor transmitter and receiver pair
Abstract: MLV12-8-H-250 MV12 MLV12 MA21 MLV12-8-H 650-nm 1mW MLV12-54-G
Text: Photoelectric Sensors MLV12 Series Dura-VueTM Sensors • High-visibility, dual-position indicator LEDs • Thru-hole or dovetail mounting • Extreme low-temperature operation -40ºC/F available 4 output options from 1 sensor: NPN normally open, NPN normally
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MLV12
MLV12.
MLV12-54-G
M12/MV12:
M12x1
MLV12-8andMLV12-54)
MLV12-54-GandM12/MV12)
IR Sensor transmitter and receiver pair
MLV12-8-H-250
MV12
MA21
MLV12-8-H
650-nm 1mW
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2N3511
Abstract: No abstract text available
Text: SEMEC a B LTD ^ B133167 DDDDQlb • SMLB T - ^ 7 '« / 2N3420 2N3421 2N3421LP 2N3425 2N3439 ■' HI-REL HI-REL HI-REL HI-REL CECC NPN NPN NPN NPN NPN 2N3440 2N3440S 2N3467 2N3508 2N3509 CECC CECC HI-REL HI-REL HI-REL NPN NPN PNP NPN NPN 2N3511 2N3571 2N3583
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OCR Scan
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B133167
20min
15min
30min
60min
300typ
150typ
600typ
2N3511
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2N3904DCSM
Abstract: 2N2222ADCSM 2N3965
Text: 61 33167 0G00105 S 37E D SEMELAB LTD BS/CECC Polarity Package v CEO •c cont 50003-017 50003-017 50003-017 50003-017 NPN NPN NPN NPN NPN T077 Dual T03 T03 T03 T03 50 60 80 60 80 0.03 10 10 10 10 •150-600 25-90 25-90 50-150 50-150 NPN NPN NPN NPN NPN T039
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OCR Scan
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2N3680
2N3713
2N3714
2N3715
2N3716
2N3719
2N3720
2N3724
2N3724A
2N3725
2N3904DCSM
2N2222ADCSM
2N3965
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MPS6531
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000
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OCR Scan
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA206531,
MPS6532
MPS6531
MPSA20
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mps65
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000
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OCR Scan
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20MPS6516
MPS6517
mps65
MPSA20
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MPS6566
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000
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OCR Scan
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA2034
MPS6532
MPS6566
MPSA20
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mpsa65
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50
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OCR Scan
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA200
MPS3702,
mpsa65
MPSA20
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D38L1-3
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50
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OCR Scan
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20
D38L1-3
MPSA20
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MPS6566
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50
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OCR Scan
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20VES
MPS6566
MPSA20
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2N709
Abstract: ic 709 2N3010
Text: 2N709 2N 3010 SILICON PLANAR NPN U LT R A HIGH-SPEED S ATU R ATED SWITCHES The 2N 709 and 2N 3010 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case. They are designed fo r switching applications up to 50 mA. ABSOLUTE M A X IM U M RATINGS
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OCR Scan
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2N709
300/is,
ic 709
2N3010
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BFR134
Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
Text: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar
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OCR Scan
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BFR134
BFR134
2322 712
2322-712
Philips fr 153 30
philips resistor 2322 763
Transistor 933
2222 372
transistor J 3305
109 transistor 33 db
2222 379
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2322-712
Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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OCR Scan
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OT103
33-OS
BFG134
Q04S2014
OT103.
2322-712
BFG134
LC 3524
philips resistor 2322 763
2222 372
TAG 453 665 800
2222 379
2322 712
fr 253/30 r
h a 431 transistor
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BFG134
Abstract: BJE 247
Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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OCR Scan
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3131S
BFG134
OT103
OT103.
BFG134
BJE 247
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