NPN Transistor 1500V
Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V
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NTE238
NTE238
Cont00V,
NPN Transistor 1500V
transistor tl 187
187 npn transistor
NPN Transistor 1500V 20a
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BUV50
Abstract: No abstract text available
Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN
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BUV50
125oC
BUV50
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BUV50
Abstract: BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR
Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN
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BUV50
125oC
BUV50
BUV50 AT MICROELECTRONICS
HIGH POWER NPN SILICON TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits
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BUJ303A
O-220AB)
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curve tracer specifications
Abstract: No abstract text available
Text: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits
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BUJ303A
O-220AB)
curve tracer specifications
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NTE251
Abstract: Darlington 40A
Text: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
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NTE251
NTE252
NTE251)
NTE252)
NTE251
Darlington 40A
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NPN Transistor VCEO 1000V
Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:
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NTE2310
NTE2310
100mA,
NPN Transistor VCEO 1000V
1000v, NPN
transistor VCE 1000V
transistor VCEO 1000V
TO218 package
transistor 1000V 6A
high voltage fast switching npn 4A
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BUW48
Abstract: BUW49 80V 1A NPN Transistor
Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN 3 APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL
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BUW48
BUW49
BUW48
BUW49
O-218
O-218
80V 1A NPN Transistor
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TO63 package
Abstract: NTE71
Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.
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NTE71
NTE71
TO63 package
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BU208A equivalent
Abstract: BD237 similar IC 3843 8 Pin BU108 BU208 2N4347 BD-31 2n3055 motorola bdx54c equivalent MJ13330
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ13333 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching
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MJ13333
MJ13333
AMP32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU208A equivalent
BD237 similar
IC 3843 8 Pin
BU108
BU208
2N4347
BD-31
2n3055 motorola
bdx54c equivalent
MJ13330
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BUW48
Abstract: BUW49
Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN • ■ ■ ■ ■ 3 APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL
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BUW48
BUW49
BUW48
BUW49
O-218
O-218
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BUW48
Abstract: BUW49
Text: BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION ■ SWITCHING REGULATORS ■ MOTOR CONTROL
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BUW48
BUW49
O-218
BUW48
BUW49
O-218
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darlington NPN 600V 12a transistor
Abstract: darlington NPN 600V 20a transistor NPN 600V transistor NPN 600V transistor darlington application MJ10023 NPN Transistor 600V MJ10023 NPN POWER DARLINGTON darlington NPN 600V
Text: DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.
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MJ10023
MJ10023
darlington NPN 600V 12a transistor
darlington NPN 600V 20a transistor
NPN 600V transistor
NPN 600V transistor darlington
application MJ10023
NPN Transistor 600V
NPN POWER DARLINGTON
darlington NPN 600V
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NTE478
Abstract: No abstract text available
Text: NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating
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NTE478
175MHz
NTE478
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2N3772
Abstract: 2N3772G
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications.
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2N3772
2N3772
2N3772L-T30-Y
2N3772G-T30-Y
QW-R205-002
2N3772G
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NTE2311
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V
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NTE2311
NTE2311
npn 1000V 15A
NPN Transistor VCEO 1000V
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2S322
Abstract: No abstract text available
Text: 2S322 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
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2S322
O205AA)
20-Aug-02
2S322
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CV7440L
Abstract: No abstract text available
Text: CV7440L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
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CV7440L
O205AA)
20-Aug-02
CV7440L
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B904
Abstract: D1213 2SB904 D152 2SD121
Text: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.
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eN1022A
2SB904/2SD1213
0V/20A
2SB904
B904
D1213
2SB904
D152
2SD121
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BUW48
Abstract: Asg TRANSISTOR
Text: T SCS-THOMSON BUW48 ^ 7 # Meiamiigra@BtiiB8_ BUW49 HIGH POWER NPN SILICON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VER Y LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION
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BUW48
BUW49
BUW48
BUW49
O-218
Asg TRANSISTOR
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2N5038
Abstract: 2N5039 2N6039 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
Text: NPN SILICON POWER TRANSISTORS NPN 2N5038 2N5039 . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. FEATURES:
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2N5038
2N5039
2N5039
2N6039
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND
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BUX98P
Abstract: No abstract text available
Text: /= 7 SCS-THOMSON ^7# iüaoeœiiLieTîB i«e8 BUX98P HIGH VOLTAGE^FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . SWITCH MODE POWER SUPPLIES
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OCR Scan
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BUX98P
BUX98P
O-218
100mA
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C 828 Transistor
Abstract: marking code 20A iC 828 Transistor LB1200
Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac tured by the epitaxial planar process, epoxy mold ed in a surface mount package, designed for
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CZT5338
OT-223
CP219
26-September
OT-223
C 828 Transistor
marking code 20A
iC 828 Transistor
LB1200
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BUV50
Abstract: No abstract text available
Text: SGS-THOMSON BUV50 im HIGH POWER NPN SILICON TRANSISTOR . . • . ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125°C APPLICATIO N . SWITCHING REGULATORS ■ MOTOR COISTTROL D ESCRIP TIO N
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BUV50
BUV50
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