NPN 10 A 50 V GERMANIUM Search Results

NPN 10 A 50 V GERMANIUM Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
CS60-010S	Coilcraft Inc	Current Sense Transformer, 10A

NPN 10 A 50 V GERMANIUM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFU725F Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power	PDF
Untitled Abstract: No abstract text available Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU760F OT343F JESD625-A	PDF
transistor marking N1 Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave	PDF
BFU760F Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power	PDF
BFU610F Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU610F OT343F BFU610F SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power	PDF
BFU725F Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power	PDF
BFU790F Abstract: JESD625-A Germanium power Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU790F OT343F JESD625-A BFU790F Germanium power	PDF
germanium transistor ac 125 Abstract: No abstract text available Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU730F OT343F JESD625-A germanium transistor ac 125	PDF
marking s20 SMD Transistor Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power Text: 62 7 & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.	Original	BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power	PDF
BFU730F Abstract: JESD625-A 555 ic Germanium power Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU730F OT343F JESD625-A BFU730F 555 ic Germanium power	PDF
JESD625-A Abstract: BFU710F DRO lnb Germanium power Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU710F OT343F JESD625-A BFU710F DRO lnb Germanium power	PDF
Untitled Abstract: No abstract text available Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU710F OT343F JESD625-A	PDF
transistor marking N1 Abstract: LNB ka band Germanium power Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band Germanium power	PDF
2.4 ghz transistor wifi amplifier Abstract: Germanium power 160 germanium transistor wifi lna Ghz dB transistor Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.1 — 16 November 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power 160 germanium transistor wifi lna Ghz dB transistor	PDF

npn 10 a 50 v to-3 germanium Abstract: TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449 Text: POWER GERMANIUM TRANSISTORS Item Number «C Part Number Manufacturer Type Max V BR CEO (A) (V) Po Max h re fT ICBO Max k)N Max ON) Min (HZ) (A) (s) r (CE)ut T Oper Max (Ohms) Max (°C) 250m 250m 230m 160m 470m 500m 250m 250m 250m 750m 10 10 10 750m 10 10 10	Original	2N2554 2N2558 2N1756 2N1760 2N3160 2N3156 2N1039 2N2555 2N2559 CK258 npn 10 a 50 v to-3 germanium TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449	PDF
Germanium Transistor Abstract: Germanium power ON5088,115 Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	ON5088 OT343F JESD625-A Germanium Transistor Germanium power ON5088,115	PDF
Germanium power Abstract: No abstract text available Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	ON5088 OT343F JESD625-A Germanium power	PDF
ON5088 Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.	Original	ON5088 OT343F JESD625-A ON5088 germanium NPN germanium transistors NPN SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power	PDF
2N439 Abstract: No abstract text available Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N439 - 2N439A NPN HIGH FREQUENCY COMPUTER TRANSISTORS 2N439 and 2N439A are NPN alloy-junction germanium transistors. Their basic NPN nature (high mobility electron flow) renders	Original	2N439 2N439A 2N439A 2N439Ahas	PDF
2m137 Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB	OCR Scan	ci24t N1086 J2N1087 2N169 S50I6Ã 2m137 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A	PDF
2N19A Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924 Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^	OCR Scan	2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924	PDF
2N1305 Abstract: J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2N1308 2n1308 jan transistor 2N1309 Text: M IL -S -1 9500/126C 24 March 1971 SUPERSEDING M IL -S-195 0 0 /1 26B 20 March 1904 * MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306, 2N1308 AND PNP TYPES 2N1303, 2N1305, 2N1307, 2N1309 This sp ecification is mandatory for u se by a ll D epart	OCR Scan	MIL-S-19500/126C MIL-S-19500/126B 2N1302, 2N1304, 2N1306, 2N1308 2N1303, 2N1305, 2N1307, 2N1309 2N1305 J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2n1308 jan transistor 2N1309	PDF
germanium transistors NPN Abstract: 2n1549 2N627 2N456A 2n1162 2N1560 germanium 2N458A 2n1291 2N1295 Text: germanium power transistors PNP TO-3 cont’d Type# = 3 to 25A Iife @ Ic / V c E NPN Comple VcEO(SUS) V ebo (Volts) (Volts) ment (Min-Max @ A/V) VcE(SAT) @ Ic/ I b Pd @ = 25°C Û JC (Watts) (°C/W) (V @ A/A) V be @ Ic/V cE (V @ A/V) (mA @ 1.5@5/1.5 1.5@5/1.5	OCR Scan	2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2NX021A 2N1022A 2N1218 2N1292 germanium transistors NPN 2n1549 2N627 2n1162 2N1560 germanium 2n1291 2N1295	PDF
germanium transistors NPN Abstract: npn germanium germanium af transistors AC127 germanium transistor transistor germanium germanium germanium npn transistor 127 na Germanium Transistors Text: NPN Germanium Transistors // fT <VCE “ o C om m on Characteristics < NPN G erm anium A F A llo y transistors in T 0 1 m etal case Cob V Cß = 6 V , l e = 0 1m A) 70 pF I 1 M Hz , M a xim um ratings C haracteristics @ T am^-= 25 °C p TOT 1 o -I Í Type	OCR Scan		PDF

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NPN 10 A 50 V GERMANIUM Search Results

NPN 10 A 50 V GERMANIUM Result Highlights (5)

NPN 10 A 50 V GERMANIUM Datasheets Context Search

BFU725F

Untitled

transistor marking N1

BFU760F

BFU610F

BFU725F

BFU790F

germanium transistor ac 125

marking s20 SMD Transistor

BFU730F

JESD625-A

Untitled

transistor marking N1

2.4 ghz transistor wifi amplifier

npn 10 a 50 v to-3 germanium

Germanium Transistor

Germanium power

ON5088

2N439

2m137

2N19A

2N1305

germanium transistors NPN

germanium transistors NPN