LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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ST 9427
Abstract: 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371 74935 M605030 806-0300 transistor 9427
Text: December 1997 RR-B2A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and
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12GHz
27GHz
ST 9427
155-0241
155-0241-02
M726* TRANSISTOR
st 9635
1550371
74935
M605030
806-0300
transistor 9427
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74xx76
Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32
Text: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters
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71587A-01
74xx76
TDA 7247
74XX174
triangle and square wave generator lm339
BA 658 Bar-Graph Display Driver
74xx161
DARLINGTON TRANSISTOR ARRAY
ic str 6454 equivalent
74xx11
74XX32
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Untitled
Abstract: No abstract text available
Text: r z 7 S C S - T H O M S O N ^ 7# ¡MH Bi^ i[LiiS7[^©lMll0 i _ M J E 1 3 0 0 5 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec T0-220 plastic package
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MJE13005
T0-220
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TRANSISTOR BI 237
Abstract: NPN/TRANSISTOR BI 237
Text: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for
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2SD1766
OT-89,
SC-62)
2SD1766;
2SB1188
max70
2SD1766
TRANSISTOR BI 237
NPN/TRANSISTOR BI 237
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N R ïinsœ iiLieî^ûinsi BUF410A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY • VERY HIGH SWITCHING SPEED . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . LOW BASE-DRIVE REQUIREMENTS
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BUF410A
BUF410A
O-218
OT-93)
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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NPN DARLINGTON POWER MODULE
Abstract: SGS50DA SGS50DA080D SGS50D
Text: 30E D m 7^2^237 DD30b7S r r z SGS-THOMSON “ 7# s 6 « lim iO T « ! s^T hom son fi m S G S 5 0 D A 080D ’ NPN DARLINGTON POWER MODULE « POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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DD30b7S
O-240)
PC-029«
NPN DARLINGTON POWER MODULE
SGS50DA
SGS50DA080D
SGS50D
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RELE 12V 5 pines
Abstract: BC pnp 200mA TRANSISTOR BI 237 VP0300B equivalent 80 amp 30v npn darlington IRF9513 equivalent lm324 4mA to 20mA transmitter VP0300M equivalent st 555C ZVP1304A
Text: XTR110 B U R R -B R O W N « 1 XTR110 M * i FEATURES A P P L IC A T IO N S • 4mA TO 20mA TRANSMITTER • INDUSTRIAL PROCESS CONTROL • PRESSURE/TEMPERATURE TRANSMITTERS • SELECTABLE INPUT/OUTPUT RANGES: 0V to +5V, 0V to +10V Inputs 0mA to 20mA. 5mA to 25mA Outputs
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XTR110
XTR110
RELE 12V 5 pines
BC pnp 200mA
TRANSISTOR BI 237
VP0300B equivalent
80 amp 30v npn darlington
IRF9513 equivalent
lm324 4mA to 20mA transmitter
VP0300M equivalent
st 555C
ZVP1304A
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TRANSISTOR BI 237
Abstract: NPN/TRANSISTOR BI 237
Text: SGSF464 SGSIF464 SGS-THOMSON MDiSæilLICTI^^WlDIgi HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . HIGH VOLTAGE CAPABILITY . VERY HIGH SWITCHING SPEED • LOW BASE-DRIVE REQUIREMENTS . U.L. RECOGNISED ISOWATT218 PACKAGE
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SGSF464
SGSIF464
ISOWATT218
E81734
SGSF464
SGSIF464
mon/SGSIF464
IS0WATT218
TRANSISTOR BI 237
NPN/TRANSISTOR BI 237
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STF6045AV
Abstract: ibm t40 20MS etd 41
Text: f Z 7 SGS-THOMSON ^7# Kin gl3@lllLI(gTI3 «Sl STF6045AV NPN DARLINGTON POWER MODULE . . . . EASY TO DRIVE TECHNOLOGY (ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) . EASY TO MOUNT
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STF6045AV
GG7272Ã
STF6045AV
ibm t40
20MS
etd 41
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ESM2012DV
Abstract: No abstract text available
Text: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE
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ESM2012DF
ESM2012DV
ESM2012DV
ESM2012DF
T-91-20
O-240)
PC-029«
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Untitled
Abstract: No abstract text available
Text: b u r r - brown corp HE ] I 1? 313Li5 0014057 1 | T O H I-i \ XTR110 B U R R -B R O W N a 1 XTR110 [ APPLICATIO N S • 4mA TO 20mA TRANSMITTER • SELECTABLE INPUT/OUTPUT RANGES: OV to + 5 V , OV to + 1 0 V Inputs OmA to 20mA, 5mA to 25mA Outputs Other Ranges
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313Li5
XTR110
10-Iu
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BUL48
Abstract: No abstract text available
Text: S * 5 G S - T H O M S O N ¡^ O T e « S 7 B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSW ITCHING TRAN SISTO R . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS • MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS
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BUL48
BUL48
O-220
gc25780
712T237
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transistor t2a 82
Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:
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T-33-/3
T0126
15A3DIN
transistor t2a 82
transistor 81 110 w 85
transistor BUT 12
transistor BC 245
BUT76A
transistor BF 245
MARKING NJ CODE SOT 23
TRANSISTOR BI 237
marking 712
marking va transistors
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F343
Abstract: NPN 350W SGS transistors if443 npn 1000V 100a 10101DC SGS-Thomson TO3 HEATSINK f443
Text: • S 3 -< 3 SGS-THOMSON ilL i D ir i^ K lD ( D i SGSF343/IF343 SGSF443/IF443/F543 S G S-THOMSON 3GE J> FASTS WITCH HOLLOW-EMITTER NPN TRANSISTORS ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR O FF-LINE APPLIC A
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SGSF343/IF343
SGSF443/IF443/F543
70kHz
500ms
F343
NPN 350W
SGS transistors
if443
npn 1000V 100a
10101DC
SGS-Thomson
TO3 HEATSINK
f443
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TRANSISTOR BI 187
Abstract: BUT230F BUT23 transistor bI 240
Text: 3GE S C [ * [ œ S - T H O D • M S O & J IF i Q M 7T2T537 W © S s 00303ÔM 6 3 ■ s -T H O M S Q N ' " P ’W i S 3 U T 2 3 0 F B U T 2 3 0 V NPN TRANSISTOR POWER MODULE ■ HIGH C U RR ENT PO W ER BIPOLAR MODULE ■ VE R Y LOW Rth JUNCTION CASE ■ SPECIFIED
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7T2T537
BUT230V
BUT230F
O-240)
PC-029«
TRANSISTOR BI 187
BUT230F
BUT23
transistor bI 240
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transistor 1248
Abstract: buf832
Text: 30E D SGS-THOMSON 7 ^ 5 3 7 S ÜQ3D37G G s-thom son m 3 3UF832F BUF832V •'P S fc -lS NPN TRANSISTOR POWER MODULE ADVANCE DATA . . • ■ ■ HIGH VOLTAGE, HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE ISOLATED CASE 2500V RMS EASY TO MOUNT
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Q3D37G
3UF832F
BUF832V
BUF832V
BUF832F
i2T237
O-240)
PC-029«
transistor 1248
buf832
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polysilicon resistor
Abstract: cd22 CD34 CD56 CD77 polysilicon resistor fabrication transistor arrays 5v J553S
Text: calDICE Dielectrically-Isolated, Linear,; Bipolar Semi-Custom Arrays CD22/./CD911 Preliminary DESCRIPTION FEATURES CalDICE are CALOGIC’s family of semi-custom arrays featuring Dielectrically-Isolated Complementary Electronics. CalDICE are fabricated using a 90V, complementary bipolar
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CD22/.
/CD911
CD911,
ia443EE
polysilicon resistor
cd22
CD34
CD56
CD77
polysilicon resistor fabrication
transistor arrays 5v
J553S
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buh713
Abstract: GC328 121-237 CW2015
Text: rZ 7 SGS-THOMSON ^ 7# [M œ m iO T * ® BUH713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE# E817 3 4 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR
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BUH713
ISOWATT218
E81734
BUH713
SC03DBI
GC328
121-237
CW2015
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gc153
Abstract: welding rectifier schematic BUF460F BUF460V
Text: 3 QE r= Z ^ 7# t> m 7 ^ 2 3 7 S G S -T H O M S O N g q 3 G3 s d a * 6 S TH<>BS0N 3 U F 4 6 0 F B U F4 6 0 V '~ P 3 > '3 r i5 • NPN TRANSISTOR POWER MODULE ■ . « ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE
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G03D35D
uF460F
BUF460V
BUF460F
T-91-20
O-240)
gc153
welding rectifier schematic
BUF460F
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S-40T
Abstract: SGS40TA045 SGS40
Text: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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SC04520
O-240)
PC-029«
S-40T
SGS40TA045
SGS40
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SGS30DA060
Abstract: SGS30DA060D
Text: 3QE D • 7 ^ 2 3 7 QG30bb0 1 ■ '’ ~ P 3 V ? * 5 ' rZZ SCS-THOMSON ^ 7 # s 6 ^ _ S G S 3 0 D A 0 60D c s m ’T j o m s o n NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHEELING DIODE
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QG30bb0
O-240)
PC-029«
SGS30DA060
SGS30DA060D
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BUH715
Abstract: No abstract text available
Text: £ j ï SGS-THOMSON IILICTIiWIOlêS BUH715 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY • U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR
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BUH715
ISOWATT218
E81734
BUH715
P025C
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