Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NP88N04EHE Search Results

    SF Impression Pixel

    NP88N04EHE Price and Stock

    NEC Electronics Group NP88N04EHEE1

    N-CHANNEL POWER MOSFET SWITCHING Power Field-Effect Transistor, 88A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA NP88N04EHEE1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NP88N04EHE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NP88N04EHE NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    NP88N04EHE NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF

    NP88N04EHE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MP-25

    Abstract: NP88N04CHE NP88N04DHE NP88N04EHE
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE, NP88N04DHE, NP88N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N04CHE, NP88N04DHE, NP88N04EHE O-220AB O-262 NP88N04DHE NP88N04CHE O-263 MP-25 NP88N04CHE NP88N04DHE NP88N04EHE

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE,NP88N04DHE,NP88N04EHE,NP88N04KHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N04CHE NP88N04DHE NP88N04EHE NP88N04KHE O-220AB O-262 O-263 MP-25ZJ)

    NP88N04DHE

    Abstract: MP-25 NP88N04CHE NP88N04EHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE, NP88N04DHE, NP88N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N04CHE, NP88N04DHE, NP88N04EHE O-262 O-220AB NP88N04DHE NP88N04CHE O-263 O-220AB) NP88N04DHE MP-25 NP88N04CHE NP88N04EHE

    MP-25

    Abstract: NP88N04CHE NP88N04DHE NP88N04EHE
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP88N04CHE, NP88N04DHE, NP88N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N04CHE, NP88N04DHE, NP88N04EHE O-220AB O-262 NP88N04DHE NP88N04CHE O-263 MP-25 NP88N04CHE NP88N04DHE NP88N04EHE

    MP-25

    Abstract: NP88N04CHE NP88N04DHE NP88N04EHE NP88N04KHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE,NP88N04DHE,NP88N04EHE,NP88N04KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N04CHE NP88N04DHE NP88N04EHE NP88N04KHE O-262 NP88N04EHE O-220AB NP88N04DHE NP88N04CHE O-263 MP-25 NP88N04KHE

    nec 88n04

    Abstract: 88n04 NP88N04MHE NP88N04EHE NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE NP88N04KHE-E1-AY NP88N04KHE-E2-AY NP88N04CHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE-E2-AY NP88N04KHE-E1-AY nec 88n04 88n04 NP88N04MHE NP88N04EHE NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE NP88N04KHE-E1-AY NP88N04KHE-E2-AY NP88N04CHE

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE, NP88N04DHE, NP88N04EHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


    Original     		PDF NP88N04CHE, NP88N04DHE, NP88N04EHE NP88N04CHE NP88N04DHE NP88N04EHE O-220AB O-262 O-263 O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE, NP88N04DHE, NP88N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N04CHE, NP88N04DHE, NP88N04EHE NP88N04CHE NP88N04DHE NP88N04EHE O-220AB O-262 O-263 O-220AB)

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24

    nec 88n04

    Abstract: 88n04 NP88N04CHE NP88N04DHE NP88N04EHE NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE NP88N04KHE-E1-AY NP88N04KHE-E2-AY
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    TO-252 MOSFET p channel

    Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
    Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering


    Original     		PDF NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE

    TO-252 MOSFET p channel

    Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
    Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive


    Original     		PDF Q3/2001 NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS071V50 TO-252 MOSFET p channel nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE