D-101-00
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252
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NP36N055HHE,
NP36N055IHE
NP36N055HHE
O-251
O-252
O-251)
D-101-00
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NP36N055HHE
Abstract: NP36N055IHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252
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NP36N055HHE,
NP36N055IHE
NP36N055HHE
O-251
O-252
O-251)
NP36N055HHE
NP36N055IHE
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NP36N055HHE
Abstract: NP36N055IHE
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP36N055HHE,NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION
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NP36N055HHE
NP36N055IHE
NP36N055HHE
O-251
O-252
NP36N055IHE
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NP36N055HHE
Abstract: NP36N055IHE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.
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NP36N055HHE,
NP36N055IHE
O-251
NP36N055HHE
O-252
NP36N055HHE
NP36N055IHE
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NP36N055SHE
Abstract: NP36N055HHE NP36N055IHE d14152ej4v0ds
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE, NP36N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.
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NP36N055HHE,
NP36N055IHE,
NP36N055SHE
NP36N055HHE
NP36N055IHE
O-251
O-252
O-251)
NP36N055SHE
NP36N055HHE
NP36N055IHE
d14152ej4v0ds
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252
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NP36N055HHE,
NP36N055IHE
NP36N055HHE
O-251
O-252
O-251)
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NP36N055SHE
Abstract: mp-3zk NP36N055HHE NP36N055IHE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NP36N055SHE
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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IR260/WS260/HS350
IR260/HS350
mc10087f1
mc-10041
mc-10043
MC-10087F1-XXX
MC-10044
MC-10051BF1
2SC5664
2SC5292
UPC1701C
mc-10059
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TO-252 MOSFET p channel
Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive
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Q3/2001
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS071V50
TO-252 MOSFET p channel
nec 288
powermosfet Gate Drive
STR 1504
TO-262 MOSFET
NP80N03CLE
NP80N03DLE
NP80N04CHE
NP80N04DHE
NP84N04CHE
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