D-101-00
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252
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NP36N055HHE,
NP36N055IHE
NP36N055HHE
O-251
O-252
O-251)
D-101-00
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NP36N055HHE
Abstract: NP36N055IHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252
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NP36N055HHE,
NP36N055IHE
NP36N055HHE
O-251
O-252
O-251)
NP36N055HHE
NP36N055IHE
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NP36N055HHE
Abstract: NP36N055IHE
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP36N055HHE,NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION
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NP36N055HHE
NP36N055IHE
NP36N055HHE
O-251
O-252
NP36N055IHE
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NP36N055HHE
Abstract: NP36N055IHE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.
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NP36N055HHE,
NP36N055IHE
O-251
NP36N055HHE
O-252
NP36N055HHE
NP36N055IHE
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NP36N055SHE
Abstract: NP36N055HHE NP36N055IHE d14152ej4v0ds
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE, NP36N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.
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NP36N055HHE,
NP36N055IHE,
NP36N055SHE
NP36N055HHE
NP36N055IHE
O-251
O-252
O-251)
NP36N055SHE
NP36N055HHE
NP36N055IHE
d14152ej4v0ds
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE NP36N055HHE TO-251 NP36N055IHE TO-252
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NP36N055HHE,
NP36N055IHE
NP36N055HHE
O-251
O-252
O-251)
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smd code marking NEC
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part
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G18756EU3V0SG00
smd code marking NEC
TRANSISTOR SMD CODE PACKAGE SOT89 52 10A
38w smd transistor
smd mark code 38w
SMD 8PIN IC MARKING CODE 251
marking code E1 SMD 5pin
6pin dip SMD mosfet MARKING code T
mosfet SMD CODE PACKAGE SOT89 52 10A
marking code E2 p SMD Transistor
TRANSISTOR SMD MARKING CODE MP
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NP36N055SHE
Abstract: mp-3zk NP36N055HHE NP36N055IHE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NP36N055SHE
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2sk4145
Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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SC-62/SOT-89,
SC-84,
SC-95/SOT-6,
SC-96
OT-23)
OT-23F,
O-252Z,
O-252ZK,
O-252ZP,
O-263ZJ,
2sk4145
2sk4075
UPA2724
2SK4212
2sk4213
uPA2804T1L
2SK4145-S19
2sk4202
uPA2211
2sk3919
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2sk4145
Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P)
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SC-62/SOT-89,
SC-84,
SC-95/SOT-6,
SC-96
OT-23)
OT-23F,
O-252Z,
O-252ZK,
O-252ZP,
O-263ZJ,
2sk4145
2sk4075
2sk4213
uPA2591T1H
2SK4202
uPA2804T1L
UPA2727T1A
mosfet 2sk4145
UPA1914TE-T1
2sk4080
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PA1900TE
Abstract: 2sk3326 PA1770 d1340 2SK3298 UMOS-2
Text: PowerMOSFET by NEC: Well-built . Even the most brillant It’s the same in real life. intelligence needs a little muscle to put the ideas into practice. Conversely, sheer brute force won’t get you anywhere without some Let’s face it, brain or brainpower behind it.
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E-28007
I-20124
I-00139
GB-MK14
D13405EE3V0PF00
PA1900TE
2sk3326
PA1770
d1340
2SK3298
UMOS-2
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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TO-252 MOSFET p channel
Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering
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NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS109V30
TO-252 MOSFET p channel
NP80N03CLE
NP80N03DLE
NP80N03ELE
NP80N04CHE
NP80N04DHE
NP80N04EHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
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TO-263 footprint
Abstract: UMOS-4 NP90N04MUG NP82N055MHE NP60N04KUG NP22N055SLE NP32N055SDE NP32N055SLE NP34N055SHE NP36N055SHE
Text: NP-Series • • • • • • AEC-Q101 compliant Super high current capability Tj,max = 175°C Avalanche energy rated TO-220, TO-252 and TO-263 package RoHS compliant + + + new P-Channel products + + + NP-series – our hotheads can take the heat NEC Electronic’s PowerMOSFET NP-series
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AEC-Q101
O-220,
O-252
O-263
D17430EE2V0PF00
TO-263 footprint
UMOS-4
NP90N04MUG
NP82N055MHE
NP60N04KUG
NP22N055SLE
NP32N055SDE
NP32N055SLE
NP34N055SHE
NP36N055SHE
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NP75P04
Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG
Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:
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AEC-Q101
D17430EE5V0PF00
NP75P04
NP75N04
np15p06
HSON8
CD 40472
np28n10sde
NP36P04SDG
NP23N06
NP23N06YLG
NP50P06SDG
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SC-95
Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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MP-10,
SC-62/SOT-89,
SC-84,
SC-95/SOT-6,
SC-96
OT-23)
O-252Z,
O-252ZK,
O-263ZJ,
O-263ZK,
SC-95
2SK3294-ZJ-E1
UPA2724
NP22N055SLE-E1
2sk4075
UPA2726
2sk3919
2SJ598
2SK3570
UPA2723T1A
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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IR260/WS260/HS350
IR260/HS350
mc10087f1
mc-10041
mc-10043
MC-10087F1-XXX
MC-10044
MC-10051BF1
2SC5664
2SC5292
UPC1701C
mc-10059
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2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
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D18597EJ1V0SG
2SC5664
2sc5292
NPN transistor SST 117
D1859
2sK4075 TRANSISTOR
2sc945
2SK4075
PC78L05J
2SK3918
2sk3326
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TO-252 MOSFET p channel
Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive
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Q3/2001
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS071V50
TO-252 MOSFET p channel
nec 288
powermosfet Gate Drive
STR 1504
TO-262 MOSFET
NP80N03CLE
NP80N03DLE
NP80N04CHE
NP80N04DHE
NP84N04CHE
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