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    NP10 Search Results

    NP10 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    NP100P04PDG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP100P04PLG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP100P04PDG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Visit Renesas Electronics Corporation
    NP100P04PLG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Visit Renesas Electronics Corporation
    NP109N055PUJ-E2B-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP109N055PUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 110A 2.2mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
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    NP10 Price and Stock

    Sumida Corporation CPFC6D36NP-100M06

    CMC 2.5A 2LN 600 OHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CPFC6D36NP-100M06 Reel 80,000 1,000
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    CPFC6D36NP-100M06 Cut Tape 1,648 1
    • 1 $3.67
    • 10 $3.065
    • 100 $2.1991
    • 1000 $2.06584
    • 10000 $2.06584
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    YAGEO Corporation KNP100JR-73-43R

    RES 43 OHM 5% 1W AXIAL
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    DigiKey KNP100JR-73-43R Reel 6,000 2,000
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    YAGEO Corporation KNP100JR-73-180R

    RES 180 OHM 5% 1W AXIAL
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    DigiKey KNP100JR-73-180R Reel 6,000 2,000
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    KNP100JR-73-180R Cut Tape 1,724 1
    • 1 $0.47
    • 10 $0.32
    • 100 $0.1278
    • 1000 $0.06643
    • 10000 $0.06643
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    Sumida Corporation CDRH127NP-101MC

    FIXED IND 100UH 1.7A 220MOHM SMD
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    DigiKey CDRH127NP-101MC Reel 3,500 500
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    CDRH127NP-101MC Cut Tape 161 1
    • 1 $1.81
    • 10 $1.534
    • 100 $1.053
    • 1000 $1.02292
    • 10000 $1.02292
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    Bristol Electronics CDRH127NP-101MC 1,285
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    New Advantage Corporation CDRH127NP-101MC 1,000 1
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    • 1000 $0.9667
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    YAGEO Corporation KNP100JR-73-0R18

    RES 0.18 OHM 5% 1W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KNP100JR-73-0R18 Reel 2,000 2,000
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    KNP100JR-73-0R18 Cut Tape 1,257 1
    • 1 $0.33
    • 10 $0.225
    • 100 $0.0898
    • 1000 $0.04836
    • 10000 $0.04836
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    NP10 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NP10 Agere Systems Network Processor Original PDF
    NP100N04PUK-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263 Original PDF
    NP100N055PUK-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 100A TO-263 Original PDF
    NP100P04PDG NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P04PDG-E1-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P04PDG-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -40V MP-25ZP/TO-263 Original PDF
    NP100P04PDG-E2-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P04PLG NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P04PLG-E1-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P04PLG-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -40V MP-25ZP/TO-263 Original PDF
    NP100P04PLG-E2-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P06PDG NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P06PDG-E1-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P06PDG-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -60V MP-25ZP/TO-263 Original PDF
    NP100P06PDG-E2-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P06PLG NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P06PLG-E1-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP100P06PLG-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET P-CH -60V MP-25ZP/TO-263 Original PDF
    NP100P06PLG-E2-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP109N04PUG NEC MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET Original PDF

    NP10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NP100P06PDG

    Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY


    Original
    PDF NP100P06PDG NP100P06PDG NP100P06PDG-E1-AY NP100P06PDG-E2-AY O-263 MP-25ZP) O-263) NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original
    PDF NP100N04PUK R07DS0545EJ0100 NP100N04PUK AEC-Q101 NP100N04PUK-E1-AY NP100N04PUK-E2-AY O-263 MP-25ZP)

    "Content Addressable Memory"

    Abstract: MPLS over optical packet switching OC192c NP10 TM10
    Text: Product Brief June 2001 NP10 and TM10 Network Processors Introduction The Agere Systems PayloadPlus 10G Network Processor chip set provides wire-speed deeppacket processing for high performance packetprocessing systems. This software-compatible, programmable chip set consists of two chips—


    Original
    PDF TM10s-- PB01-137NP "Content Addressable Memory" MPLS over optical packet switching OC192c NP10 TM10

    NP109N04PUK

    Abstract: MP-25ZP
    Text: Preliminary Data Sheet NP109N04PUK R07DS0544EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original
    PDF NP109N04PUK R07DS0544EJ0100 NP109N04PUK AEC-Q101 NP109N04PUK-E1-AY NP109N04PUK-E2-AY 800p/reel O-263 MP-25ZP) MP-25ZP

    D1859

    Abstract: NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUG-E1-AY Note


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    PDF NP109N04PUG NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY O-263 MP-25ZP) O-263) D1859 NEC 109N04 MP-25ZP NP109N04PUG-E1-AY NP109N04PUG-E2-AY

    np100n04nuj

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


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    PDF NP100N04NUJ R07DS0364EJ0100 NP100N04NUJ AEC-Q101 S18-AY O-262 MP-25SK)

    NP109N04PUK

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP109N04PUK R07DS0544EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original
    PDF NP109N04PUK R07DS0544EJ0100 NP109N04PUK AEC-Q101 NP109N04PUK-E1-AY NP109N04PUK-E2-AY 800p/reel O-263 MP-25ZP)

    IEC335

    Abstract: BS6290 YCP1A12 YCP03A12 np yuasa YCP6A12 YCP2A12 YCP4A12 08708 Yuasa
    Text: Data Sheet NP SERIES - NP10-6 Reliability is your Security Yuasa NP, NPC and NPH Batteries. Utilising the latest advance design Oxygen Recombination Technology, Yuasa have applied their 80 years experience in the lead acid battery field to produce the optimum design of Sealed Lead Acid batteries.


    Original
    PDF NP10-6 0005cA 004cA. NP10-6 IEC335 BS6290 YCP1A12 YCP03A12 np yuasa YCP6A12 YCP2A12 YCP4A12 08708 Yuasa

    NP101-D16C

    Abstract: ddr2 ram slot pin voltage 12v power jack pcb NP101 RealTek RTL8111C RTL8111C
    Text: Intel NP101-D16C 945GSE Mini-ITX Board with 12V DC-in PROCESSOR I/O CONNECTORS CHIPSET • • • • • • • • • • • • • • • • • • • Intel® AtomTM N270 processor & Passive HS onboard 1.6GHz core frequency, 1.10V voltage 2.5W thermal design power


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    PDF 945GSE 24-bit 44-pin DB-15 NP101-D16C ddr2 ram slot pin voltage 12v power jack pcb NP101 RealTek RTL8111C RTL8111C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP109N055PUK R07DS0590EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original
    PDF NP109N055PUK R07DS0590EJ0100 NP109N055PUK AEC-Q101 NP109N055PUK-E1-AY NP109N055PUK-E2-AY O-263 MP-25ZP)

    MP-25ZP

    Abstract: NP100N04PUK NP100
    Text: Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original
    PDF NP100N04PUK R07DS0545EJ0100 NP100N04PUK AEC-Q101 NP100N04PUK-E1-AY NP100N04PUK-E2-AY O-263 MP-25ZP) MP-25ZP NP100

    13000 transistor TO-220

    Abstract: 100N04 np100n04mdh NP100N04PDH MP-25ZP NP100N04NDH S100BR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N04MDH, NP100N04NDH, NP100N04PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP100N04MDH, NP100N04NDH, NP100N04PDH NP100N04PDH NP100N04MDH-S18-AY NP100N04NDH-S18-AY NP100N04PDH-E1-AY NP100N04PDH-E2-AY 13000 transistor TO-220 100N04 np100n04mdh MP-25ZP NP100N04NDH S100BR

    APP750NP

    Abstract: APP750TM NP10 TM10 Traffic Manager 10G marking code ACL
    Text: Product Brief November 2002 10G Network Processor Chip Set APP750NP and APP750TM Introduction functionality. An additional NP10 can be added if egress classification is required. The 10G PayloadPlus solution requires only DRAM and a small amount of SRAM for external memory to


    Original
    PDF APP750NP APP750TM) APP750TM PB01-137NP-2; PB01-137NP NP10 TM10 Traffic Manager 10G marking code ACL

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original
    PDF NP100N04NUJ R07DS0364EJ0100 NP100N04NUJ AEC-Q101 NP100N04NUJâ S18-AY O-262 MP-25SK) Abs9044

    NP100P04PDG

    Abstract: NP100P04PDG-E2-AY MP-25ZP NP100P04PDG-E1-AY PT1200
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P04PDG-E1-AY


    Original
    PDF NP100P04PDG NP100P04PDG NP100P04PDG-E1-AY NP100P04PDG-E2-AY O-263 MP-25ZP) O-263) NP100P04PDG-E2-AY MP-25ZP NP100P04PDG-E1-AY PT1200

    100N04

    Abstract: NP100N04MUH NP100N04NUH NP100N04PUH MP-25ZP D1880 transistor marking code ak
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N04MUH, NP100N04NUH, NP100N04PUH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N04MUH, NP100N04NUH, NP100N04PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP100N04MUH, NP100N04NUH, NP100N04PUH NP100N04PUH NP100N04MUH-S18-AY NP100N04NUH-S18-AY NP100N04PUH-E1-AY NP100N04PUH-E2-AY 100N04 NP100N04MUH NP100N04NUH MP-25ZP D1880 transistor marking code ak

    d1859

    Abstract: 109N04 NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUG-E1-AY Note


    Original
    PDF NP109N04PUG NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY O-263 MP-25ZP) O-263) d1859 109N04 NEC 109N04 MP-25ZP NP109N04PUG-E1-AY NP109N04PUG-E2-AY

    NEC 109N04

    Abstract: 109N04 NP109N04PUJ MP-25ZP NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUJ-E1B-AY


    Original
    PDF NP109N04PUJ NP109N04PUJ NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY O-263 MP-25ZP) AEC-Q101 O-263) NEC 109N04 109N04 MP-25ZP NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


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    PDF NP100N055PUK R07DS0589EJ0100 NP100N055PUK AEC-Q101 NP100N055PUK-E1-AY NP100N055PUK-E2-AY O-263 MP-25ZP)

    transistor 7350

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original
    PDF NP100N055PUK R07DS0589EJ0100 NP100N055PUK AEC-Q101 NP100N055PUK-E1-AY NP100N055PUK-E2-AY O-263 MP-25ZP) transistor 7350

    100N055

    Abstract: NP100N055MDH NP100N055PDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N055MDH, NP100N055NDH, NP100N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP100N055MDH, NP100N055NDH, NP100N055PDH NP100N055PDH NP100N055MDH-S18-AY NP100N055NDH-S18-AY NP100N055PDH-E1-AY NP100N055PDH-E2-AY 100N055 NP100N055MDH 100n05 NP100N055NDH NP100N055PDH-E1-AY MP-25ZP NP100N055PDH-E1 NP100N055NDH-S18-AY D1880

    NP109N055PUJ

    Abstract: 109N055 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MP-25ZP NP109N055PUJ-E1B-AY NP109N055PUJ-E2B-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N055PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N055PUJ-E1B-AY


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    PDF NP109N055PUJ NP109N055PUJ NP109N055PUJ-E1B-AY NP109N055PUJ-E2B-AY O-263 MP-25ZP) AEC-Q101 O-263) 109N055 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MP-25ZP NP109N055PUJ-E1B-AY NP109N055PUJ-E2B-AY

    NP100P06PLG

    Abstract: MP-25ZP NP100P06PLG-E1-AY NP100P06PLG-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PLG-E1-AY


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    PDF NP100P06PLG NP100P06PLG NP100P06PLG-E1-AY NP100P06PLG-E2-AY O-263 MP-25ZP) O-263) MP-25ZP NP100P06PLG-E1-AY NP100P06PLG-E2-AY

    NP10N45DHB

    Abstract: MP-25 NP10N45CHB NP10N45EHB
    Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP10N45CHB,NP10N45DHB,NP10N45EHB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.


    OCR Scan
    PDF NP10N45CHB NP10N45DHB NP10N45EHB 1600pF MP-25 NP10N45EHB