vfc 1200
Abstract: BSM150GAL120DN2E3166 C67076-A2112-A70 dc chopper circuit
Text: BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM150GAL120DN2E31661200V 210A Package Ordering Code HALF BRIDGE GAL 2 C67076-A2112-A70
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BSM150GAL120DN2E3166
C67076-A2112-A70
Nov-08-1996
vfc 1200
BSM150GAL120DN2E3166
C67076-A2112-A70
dc chopper circuit
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AOT412
Abstract: No abstract text available
Text: AOT412 N-Channel SDMOSTM Power Transistor General Description Features The AOT412 and AOT412L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology
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AOT412
AOT412
AOT412L
O-220
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BF999
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
Nov-08-2002
BF99cal
BF999
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AOI452A
Abstract: No abstract text available
Text: AOI452A N-Channel SDMOSTM Power Transistor General Description Features The AOI452A is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology
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AOI452A
AOI452A
O-251A
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L121A
Abstract: voltage regulator sot 223 TO-263 LDO 1V output 1A linear voltage regulator sot223 niko-sem sot-223 voltage regulator marking
Text: NIKO-SEM L121AX Series 1A Fixed Voltage Low SOT-223, TO-252, Dropout Linear Regulator LDO - Preliminary TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L121AX Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These
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L121AX
OT-223,
O-252,
O-220
O-263
O-263,
O-220
L121A
voltage regulator sot 223
TO-263
LDO 1V output 1A
linear voltage regulator sot223
niko-sem
sot-223 voltage regulator marking
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FT4016
Abstract: TRIAC 8 Amp 800 Fagor triacs 5 amp triac 100 AC 120 triac 380 V 100 A triac FT401
Text: FT4016.P INSULATED HIGH COMMUTATION TRIAC INSULATED TOP3 On-State Current Gate Trigger Current 40 Amp £ 50 mA 16 Off-State Voltage 600 V ÷ 800 V * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P
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FT4016
Nov-08
TRIAC 8 Amp 800
Fagor triacs
5 amp triac
100 AC 120 triac
380 V 100 A triac
FT401
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TRIAC 8 Amp 800
Abstract: Triac 50 amp 380 V 100 A triac
Text: FT4018.P INSULATED STANDARD TRIAC INSULATED TO3P On-State Current Gate Trigger Current 40 Amp £ 50 mA 18 Off-State Voltage 600 V ÷ 800 V * Standard current TRIAC * Low thermal resistance with clip bounding * Low thermal resistance isolation ceramic for FT.P
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FT4018
Nov-08
TRIAC 8 Amp 800
Triac 50 amp
380 V 100 A triac
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AOD4144
Abstract: No abstract text available
Text: AOD4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology
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AOD4144
AOD4144
O-252
Gate-SourOD4144
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AOI4140
Abstract: No abstract text available
Text: AOI4140 N-Channel SDMOSTM Power Transistor General Description Features The AOI4140 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology
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AOI4140
AOI4140
O-251A
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AO4728L
Abstract: ao4728
Text: AO4728L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4728L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is
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AO4728L
AO4728L
ao4728
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VPS05604
Abstract: Bc 140 transistor
Text: BC 846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604
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VPS05604
EHA07178
OT-363
EHP00381
EHP00367
Nov-08-1999
EHP00365
EHP00364
VPS05604
Bc 140 transistor
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VPS05604
Abstract: No abstract text available
Text: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604
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VPS05604
EHA07175
OT-363
EHP00381
EHP00380
Nov-08-1999
EHP00382
EHP00379
VPS05604
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transistor BC 660
Abstract: 846U H12E
Text: BC 846U NPN Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197
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VPW09197
EHA07178
SC-74
EHP00381
EHP00367
Nov-08-1999
EHP00365
EHP00364
transistor BC 660
846U
H12E
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847S
Abstract: VPS05604 marking 1cs
Text: BC 847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604
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VPS05604
EHA07178
OT-363
EHP00381
EHP00367
Nov-08-1999
EHP00365
EHP00364
847S
VPS05604
marking 1cs
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AON7430L
Abstract: No abstract text available
Text: AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
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AON7430L
AON7430L
N7430L
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Untitled
Abstract: No abstract text available
Text: AON6706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6706 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is
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AON6706
AON6706
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H12E
Abstract: No abstract text available
Text: BC 856U PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197
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VPW09197
EHA07175
SC-74
EHP00381
EHP00380
Nov-08-1999
EHP00382
EHP00379
H12E
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Marking 3ds sot
Abstract: VPS05604 TRANSISTOR BC 650 c
Text: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604
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VPS05604
EHA07175
OT-363
EHP00381
EHP00380
Nov-08-1999
EHP00382
EHP00379
Marking 3ds sot
VPS05604
TRANSISTOR BC 650 c
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BB515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Nov-08-2002
BB515
BF999
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Untitled
Abstract: No abstract text available
Text: M echanical 2. D im e n s io n s : S c h e m a t ic : o0 .5 60 Max 0.550 Max -O 10 -O 9 4 o X D 2 o ro LO o L j ne Secondary 2 o -o 5 O- cx I— x o CJl 5. E le c t r ic a l S p e c if ic a t io n s : o 0.020 -0.400- 0.098 0CL: Pins Leakage EPOXY O O L: (Pins
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XF1515
10KPz,
100KPz,
10OKHz,
1500VAC
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0L1950
Abstract: XR151
Text: 1. M e c h a n i c a l 2. D im e n sio n s: S c h e m a tic: 0 o0 .5 6 0 Max 0 .5 5 0 Max -O X u 2 o K m O L 1y -ine; i o -O 6 CL >, m 5 ot o a> 0 .0 2 0 10 4 o E lectrical S p e c ificatio n s: o Typ -0.400- 0.0 9 8 - 10 0CL: Pins Le aka g e 6 2-5) 2 .5 m H
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XF1315
10KHz,
100KHz,
2500VAC
0L1950
Nov-08-99
XR151
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Untitled
Abstract: No abstract text available
Text: Mechanical Dimensions: 0 .5 6 0 2. Schematic: Max 0 .5 5 0 o 10 o 9 o 6 Max m e, X □ O n LD o L m i— 5. Electrical - o 0CL: CD 0.0 2 0 Le aka g e o Typ mpedanoe T u rn s EP0XY o o 410uH ±5% o o 1 o 5 BOTTOM VIEW (P in s 1-5) 10,0uH 25 (1- DC Res: (Pins
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OCR Scan
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410uH
10KHz,
300KHz,
1500VAC
50OVA0
50KHz
40KHz
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108-5660
Abstract: No abstract text available
Text: 7 8 TH I S S3 DRAW I NG IS UNPUBLI S H E D . C O P Y R I G H T 2000 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATION RIGHTS .425 REF 7. 6±0 64 0.05 . 2 d = 0 . 64± 0. 025 DE S C R I P T I O N 3 4 REVISED REVISED REVISED REVISED B B Cl DWN
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NOV08
28MAY10
04JUN10
08MAROO
108-5660
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21A1
Abstract: LMR-240
Text: NOTES: I. MATERIALS AND FINISHES: BODY - BRASS, ALBALOY PLATING C O N T A CT -BRASS, GOLD PLATING INSULATOR - P T F E , NATURAL 2. ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC 0 - I I G H z C. D I E L E C T R I C W I T H S T A N D I N G V O L T A G E :
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\RD-DM0906
\RD-DM09I
Nov-08
25-Ju
02-NOV-09
21-Nov-08
NI121
-AT5GP-8X-50
031121AAA89CP5F
21A1
LMR-240
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