7n52
Abstract: 1525P
Text: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3
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STB7N52K3,
STD7N52K3
STF7N52K3,
STP7N52K3
O-220FP
O-220
STB7N52K3
STF7N52K3
7n52
1525P
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Untitled
Abstract: No abstract text available
Text: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct
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STE30NK90Z
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4n62k
Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
Text: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3
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STF4N62K3,
STFI4N62K3,
STI4N62K3,
STP4N62K3,
STU4N62K3
O-220FP,
O-220
STF4N62K3
STFI4N62K3
STI4N62K3
4n62k
4N62
i-pak Package zener diode
4N62K3
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stp26nm60
Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Text: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V
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STB26NM60N,
STF26NM60N,
STI26NM60N
STP26NM60N,
STW26NM60N
O-220,
O-220FP
O-247
STB26NM60N
STF26NM60N
stp26nm60
STW26NM60N
26NM60N
STP26NM60N
26nm60
STB26NM60
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25NM60N
Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Text: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1
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STx25NM60ND
O-220FP,
O-220,
O-247
STB25NM60ND
STF25NM60ND
STP25NM60ND
STW25NM60ND
O-220FP
O-220
25NM60N
25NM60ND
25NM60
stw25nm60nd
stw25
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2N62K3
Abstract: STD2N62K3 STP2N62K3
Text: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3
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STB2N62K3,
STD2N62K3,
STF2N62K3,
STP2N62K3,
STU2N62K3
O-220FP,
O-220
STB2N62K3
STD2N62K3
STF2N62K3
2N62K3
STP2N62K3
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b01619
Abstract: D6NM60N
Text: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N
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STx6NM60N
O-220,
O-220FP,
STB6NM60N
STD6NM60N
STD6NM60N-1
STF6NM60N
STP6NM60N
O-220
b01619
D6NM60N
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STP13NM60
Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Text: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N
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STx13NM60N
O-220FP,
O-220,
O-247
STB13NM60N
STD13NM60N
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STP13NM60
13NM60
STD13NM60
STF13NM60
STU13NM60
stb13nm60
13nm60n
STW1
MJ430
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f25nm60n
Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Text: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application
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STB25NM60Nx
STF25NM60N
STP25NM60N
STW25NM60N
O-220,
O-220FP,
O-247
STB25NM60N
STB25NM60N-1
f25nm60n
P25NM60
w25nm60
F25NM60
P25NM60N
w25nm60n
F25NM
TO247 package dissipation
p25n
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f10nk50z
Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
Text: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested
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STF10NK50Z
O-220FP
O-220FP
f10nk50z
f10nk
f10nk50
STF10NK
F10N
STF10NK50Z
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STP9NC65
Abstract: STP9NC65FP
Text: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP9NC65
STP9NC65FP
O-220/TO-220FP
O-220
O-220FP
STP9NC65
STP9NC65FP
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STW6NA90
Abstract: sd 50 diode
Text: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW6NA90
100oC
O-247
STW6NA90
sd 50 diode
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STW45NM50FD
Abstract: ZVS phase-shift converters stw45nm50f
Text: STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STW45NM50FD
O-247
STW45NM50FD
ZVS phase-shift converters
stw45nm50f
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D5NM60
Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
Text: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw
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STP8NM60,
STP8NM60FP
STD5NM60,
STD5NM60-1
O-220/TO-220FP/DPAK/IPAK
STP8NM60
STD5NM60
O-220
D5NM60
p8nm60fp
p8n*m60fp
STD5NM60T4
STP8NM60FP
P8NM60
STD5NM60
STD5NM60-1
STP8NM60
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id 0835
Abstract: STW8NB90 STH8NB90FI
Text: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STW8NB90
STH8NB90FI
O-247/ISOWATT218
id 0835
STW8NB90
STH8NB90FI
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STP7NB80FP
Abstract: STP7NB80
Text: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB80 STP7NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.5 Ω < 1.5 Ω 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STP7NB80
STP7NB80FP
O-220/TO-220FP
STP7NB80FP
STP7NB80
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Untitled
Abstract: No abstract text available
Text: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package
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STD100N3LF3
STU100N3LF3
\TEMP\SGST\STU100N3LF3
22-Aug-2007
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viper 100
Abstract: VIPER100ASP VIPER100A VIPER100SP VIPER100 viper 224 VIPER100 Application Note FC0012 Fc0013 ST viper 100A sc1019 VIPER 300 series VIPer100
Text: VIPer100/SP VIPer100A/ASP SMPS PRIMARY I.C. PRELIMINARY DATA * T YPE V DSS In R DS(on) VIPer100/SP 620V 3 A 2.5 Ω VIPer100A/ASP (*) 700V 3 A 2.8 Ω 10 (*) Target data for VIPer100A/ASP 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ
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VIPer100/SP
VIPer100A/ASP
200KHZ
PowerSO-10
viper 100
VIPER100ASP VIPER100A VIPER100SP VIPER100
viper 224
VIPER100 Application Note
FC0012
Fc0013
ST viper 100A
sc1019
VIPER 300 series
VIPer100
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sc1019
Abstract: viper20a VIPer20 equivalent FC00500 viper20 application notes Viper20 application SC1054 FC00491 VIPER20ASP
Text: VIPer20/SP/DIP VIPer20A/ASP/ADIP SMPS PRIMARY I.C. PRELIMINARY DATA * V DSS In R DS(on) VIPer20/SP/DIP TYPE 620V 0.5 A 16 Ω VIPer20A/ASP/ADIP 700V 0.5 A 18 Ω (*) Target data for VIPer20A/ASP/ADIP PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP
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VIPer20/SP/DIP
VIPer20A/ASP/ADIP
200KHZ
VIPer20/20A,
sc1019
viper20a
VIPer20 equivalent
FC00500
viper20 application notes
Viper20 application
SC1054
FC00491
VIPER20ASP
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STV60NE06-16
Abstract: No abstract text available
Text: STV60NE06-16 N - CHANNEL 60V - 0.013Ω - 60A PowerSO-10 STripFET POWER MOSFET PRELIMINARY DATA TYPE STV60NE06-16 • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.016 Ω 60 A TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED
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STV60NE06-16
PowerSO-10
STV60NE06-16
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STP4NA40FI
Abstract: STP4NA40
Text: STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <2Ω <2Ω 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP4NA40
STP4NA40FI
100oC
O-220
ISOWATT220
STP4NA40FI
STP4NA40
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STD5NE10
Abstract: No abstract text available
Text: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 • ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED
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STD5NE10
O-251/TO-252
O-251
STD5NE10
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W26NM60
Abstract: Zener Diodes 300v STW26NM60
Text: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
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STW26NM60
O-247
W26NM60
Zener Diodes 300v
STW26NM60
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STD15N06
Abstract: No abstract text available
Text: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STD15N06
100oC
175oC
O-251)
O-252)
STD15N06
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