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    NLAS4717MR2 Price and Stock

    onsemi NLAS4717MR2G

    IC SWITCH SPDTX2 3.5OHM 10MICRO
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    DigiKey NLAS4717MR2G Digi-Reel 1,985 1
    • 1 $2.23
    • 10 $1.391
    • 100 $0.9263
    • 1000 $0.66813
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    NLAS4717MR2G Cut Tape 1,985 1
    • 1 $2.23
    • 10 $1.391
    • 100 $0.9263
    • 1000 $0.66813
    • 10000 $0.66813
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    NLAS4717MR2G Reel 4,000
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    • 10000 $0.56975
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    Newark NLAS4717MR2G Reel 4,000
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    Rochester Electronics NLAS4717MR2G 285,225 1
    • 1 $0.6331
    • 10 $0.6331
    • 100 $0.5951
    • 1000 $0.5381
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    Flip Electronics NLAS4717MR2G 32,000
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    onsemi NLAS4717MR2

    IC SWITCH SPDTX2 3.5OHM 10MICRO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NLAS4717MR2 Reel 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.15
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    Others NLAS4717MR2G

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    Chip 1 Exchange NLAS4717MR2G 4,446
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    NLAS4717MR2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NLAS4717MR2 On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717MR2 On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717MR2G On Semiconductor Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch Original PDF

    NLAS4717MR2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring


    Original
    NLAS4685 Microbump-10 489AA NLAS4717 BAT54 NLAS4717 Micro10 PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 Micro10: NLAS4717/D PDF

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 Micro10: NLAS4717/D PDF

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original
    SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 Micro-10: NLAS4717/D PDF

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 Micro10: NLAS4717/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 Micro10: NLAS4717/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D PDF

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 NLAS4717 Micro-10: Microbump-10 489AA Micro-10 NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717 Micro10: NLAS4717/D PDF