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    NITROGEN D2 Search Results

    NITROGEN D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NITROGEND2 C-Media Electronics 16-Bit Stereo USB Audio Controller Original PDF

    NITROGEN D2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    connect usb in vcd player circuit diagram

    Abstract: simple 2.1 home theater circuit diagram with volume control 5.1channel car audio amplifier circuit diagram drc Rotary encoder 5.1 dts amplifier circuit simple 5.1 home theater circuit diagram with volume control WIRING diagram USB to rca CABLE simple 5.1 home theater circuit diagram home theater 5.1 circuit diagram 5.1 remote control home theater circuit diagram
    Text: The Best USB Audio Single Chip for Stereo Digital Adaptor Application Nitrogen D2 16-Bit Stereo USB Audio Controller Dolby Digital Live and DTS Interactive Software Technology Bundle Datasheet Version 1.02 C-MEDIA ELECTRONICS INC. TEL: 886-2-8773-1100 FAX: 886-2-8773-2211


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    PDF 16-Bit connect usb in vcd player circuit diagram simple 2.1 home theater circuit diagram with volume control 5.1channel car audio amplifier circuit diagram drc Rotary encoder 5.1 dts amplifier circuit simple 5.1 home theater circuit diagram with volume control WIRING diagram USB to rca CABLE simple 5.1 home theater circuit diagram home theater 5.1 circuit diagram 5.1 remote control home theater circuit diagram

    1010-TST

    Abstract: DSACRA000022993.txt refractory testing Model 1010
    Text: • • • • • • • • • • • • • • • • • SILICON DESIGNS, INC. Model 1010 Advanced Accelerometer Solutions Digital Accelerometer Capacitive Micromachined Nitrogen Damped Hermetically Sealed Digital Pulse Density Output Fully Calibrated


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    PDF 1010L-002 1010L-005 1010L-010 1010L-025 1010L-050 1010L-100 1010L-200 20ext 74HC04 74HC161 1010-TST DSACRA000022993.txt refractory testing Model 1010

    Untitled

    Abstract: No abstract text available
    Text: • • • • • • • • • • • • • • • • • SILICON DESIGNS, INC. Model 1010 Advanced Accelerometer Solutions Digital Accelerometer Capacitive Micromachined Nitrogen Damped Hermetically Sealed Digital Pulse Density Output Fully Calibrated


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    PDF 74HC04 1010x-xxx 74HC161 74HC74

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    Abstract: No abstract text available
    Text: Model 1010 Digital Accelerometer SILICON DESIGNS, INC • • • • • • • • • • • • • • • • • Capacitive Micromachined Nitrogen Damped Hermetically Sealed Digital Pulse Density Output Fully Calibrated Responds to DC & AC Acceleration


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    PDF 1010L-002 1010L-005 10ovides 74HC04 1010x-xxx 74HC161 74HC74 1445-NW

    Untitled

    Abstract: No abstract text available
    Text: GAS CONVERSION FACTORS For FMA-5600, FMA-5700 and FMA-8500 Flow Sensors The FMA-5600, FMA-700/800 , and FMA-8500 Electronic Mass Flowmeters and Controllers are factory calibrated for nitrogen, N2 . However, these units can be used for many gases, with the


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    PDF FMA-5600, FMA-5700 FMA-8500 FMA-700/800 FMA-5600 FMA-8500 C4H10) FMA-8506

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    Abstract: No abstract text available
    Text: MASS FLOWMETERS AND CONTROLLERS With or Without Integral Display FMA-A21 * without display FMA-A23(*) with display FMA-A2100/2200/2300/2400 $ 494 Basic Model MADE IN USA ߜ ߜ ߜ ߜ ߜ ±1% Accuracy Linear Output Low Cost Thermal Technology For Flow Rates up to


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    PDF FMA-A21( FMA-A23( FMA-A2100/2200/2300/2400 FMAA2100/ FMA-A2300/2400 FMA-A2416, FMA-A2102, -NIST10 10-point

    1501a

    Abstract: MATERIAL SAFETY Solder powder RMA-15-01A Rosin Flux Type RMA 150-1A
    Text: RMA-15-01A Тип : Паяльная паста Название: 63/37 RMA-15-01A Наименование компании: KU PING ENTERPRISE CO.,LTD. Адрес: No. 5, Lane 302, Hsin Shuh Rd., Hsin Chuang City, Taipei Taiwan Телефон / Факс: TEL: 02 8201-3987~9 FAX: (02)8201-2368,8201-2388


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    PDF RMA-15-01A 40oC/90% 85oC/85% 200oC 183oC 1501a MATERIAL SAFETY Solder powder RMA-15-01A Rosin Flux Type RMA 150-1A

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    Abstract: No abstract text available
    Text: ELECTRONIC MASS FLOWMETERS Flow Reference Section FMA-3300 series from $399 , see page D-14 FMA-2100 Series (from $494) FMA-1700/FMA-1800 series (from $431), see page D-15 Shown Smaller Than Actual Size INTRODUCTION The continuing need for improved accuracy in flow measurement of


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    PDF FMA-3300 FMA-2100 FMA-1700/FMA-1800

    J15D

    Abstract: J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101
    Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Distributor: Laser Components GmbH, Germany, Phone: 0049 0 8142 28640, www.lasercomponents.com J15 Mercury Cadmium Telluride Detectors (2 to 26 µm) General Detector Bias and Operating Circuit D* and Responsivity vs. Bias


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    PDF allo142 J15D J15D16-M204-S01M-60 W1 466C DE1M J15D14 J15D14-M204-S500U-60 J15-D 5-3CN-S01M gold metal detectors PA-101

    FMA3050

    Abstract: No abstract text available
    Text: FMA3050 Pilot Datasheet v2.1 6-8.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 34 dB Gain 30 dBm P1dB Output Power at 6 V, 1.4 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5.1 x 3 sq. mm die D1 D2 D3 D4


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    PDF FMA3050 FMA3050 22-A114. MIL-STD-1686 MILHDBK-263.

    FMA3051

    Abstract: FMA3051-000
    Text: FMA3051 Pilot Datasheet v2.1 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die D1 D2 D3 D4


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    PDF FMA3051 FMA3051 22-A114. MIL-STD-1686 MILHDBK-263. FMA3051-000

    Pyroelectric Detectors

    Abstract: schematic insb W1 466C PA-101 capacitor RC 65 8142 T gold metal detectors J15-IN J15TE2 HgCdTe TE cooled GE detector
    Text: Mercury Cadmium Telluride Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk


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    W4PRE8F-0200

    Abstract: W4TRD0R-0200 W4TRE0R-0200 W6NRD0X-0D00 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRF0R-0200 W4NRF0X-0D00
    Text: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1


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    W6NRD0X-0000

    Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
    Text: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for


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    SPMWHT5206

    Abstract: SPMWHT5206N2BAD2S0 CAS140CT SPMWHT5206n2ba SPMWHT5206N2BAD3S0 SPMWHT5206N2BAD0S0 DC90 SPMWHT5206N2
    Text: Rev: ISSUE NO : DATE OF ISSUE : 2009. 09. 09 SPECIFICATION MODEL : SPMWHT5206N2BAD0S0 Approved rank : V F A1, A2, A3, A4 , CIE(D1, D2, D3, D4), I V(S0) WHITE LED D0 RANK CUSTOMER : 사내 Module用 CUSTOMER : 사내 Module用 CHECKED APPROVED SAMSUNG LED DRAWN


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    PDF SPMWHT5206N2BAD0S0 SPMWHT5206N2BAD0S0) SPMWHT5206 SPMWHT5206N2BAD2S0 CAS140CT SPMWHT5206n2ba SPMWHT5206N2BAD3S0 SPMWHT5206N2BAD0S0 DC90 SPMWHT5206N2

    GLAR94001

    Abstract: Samsung Electro-Mechanics led Samsung Electro-Mechanics SI 1340
    Text: ISSUE NO : Rev: DATE OF ISSUE : 2009. 01. 16 SPECIFICATION MODEL : SLTRGB35166N [Approved Rank : VF SS , CIE(T1, T2), IV(D1, D2, D3, D4, D5, D6, D7, D8, D9, DA, DB, DC)] FULL COLOR TOP VIEW CUSTOMER : 대표 승인원 CUSTOMER : 대표 승인원 DRAWN CHECKED


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    PDF SLTRGB35166N 24hours SLTRGB35166N) GLAR94001 Samsung Electro-Mechanics led Samsung Electro-Mechanics SI 1340

    Vitrohm

    Abstract: No abstract text available
    Text: Series LPS Low Ohmic Power resistors Current sensor Specification Type 359-XXX Style Existing styles upon request Power rating P70 W depends on style Resistance range Ω R0005 . R068 Tolerance % ±5 others upon request 10-6 ∗ K-1 -80 . +40 for CuNi 44


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    PDF 1000h, 359-XXX R0005 D-25421 Vitrohm

    GLAR94001

    Abstract: No abstract text available
    Text: ISSUE NO : 08083789 Rev: 000 DATE OF ISSUE : 2008. 08. 12. SPECIFICATION MODEL : SLTRGB33266N Approved Rank : [VF S , CIE(A1, A2, A3, A4, B1, B2, B3, B4, C1, C2, C3, C4, D1, D2, D3, D4), I V(S)] RGBW TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS


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    PDF SLTRGB33266N SLTRGB33266N) GLAR94001

    LPS359

    Abstract: power RESISTORs
    Text: DATA SHEET LEADED POWER RESISTORS LPS – SEMICUSTOMIZED current sensors Product Specification - Jun. 18, 2003 V.0 BUILD YOUR OWN Series LPS Low Ohmic Power resistors Current sensor Specification Type LPS359-XXX Style Existing styles upon request Power rating P70


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    PDF 1000h, LPS359-XXX 0R0005 0R068 40thers D-25337 LPS359-0xx LPS359-1 359-Xxx LPS359 power RESISTORs

    Untitled

    Abstract: No abstract text available
    Text: r H MR-10502 GaAs Analog Integrated Circuit 0.5 - 5.0 GHz Monolithic Amplifier PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES □ -1.45 .057 £ Excellent Broadband Performance, Minimum 9 dB Gain, 0.5-5 GHz, ±0.75 dB Gain Flatness 0.85


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    PDF MR-10502 D20BU 0502-A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY JS8905-AS FEATURES: ULTRA LOW NOISE FIGURE 0.9 dB at f = 18 GHz 1.4 dB a t f = 26GHz • 0.25 Aim GATE LENGTH SUPER HIGH ASSOCIATED GAIN 10 dB at f = 18 GHz 7 dB at f = 26 GHz ■ T-SHAPED GATE HIGH MAXIMUM AVAILABLE GAIN 1 2 d B a tf = 18 GHz


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    PDF JS8905-AS 26GHz 26GHz 10mA34 0D22C TQT725D 0022T33

    D20BU

    Abstract: 40 hmr 120 101M HMR-10502
    Text: _ Q Q r v _ HMR-10502 GaAs Analog Integrated Circuit 0.5 - 5.0 GHz Monolithic Amplifier PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES Excellent Broadband Performance, □ □ Minimum 9 dB Gain, 0.5-5 GHz,


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    PDF HMR-10502 D20BU 0502-A 40 hmr 120 101M HMR-10502

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET JS8838A-AS Power GaAs FETs Chip Form Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


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    PDF JS8838A-AS T0T725D MW10090196 JS8838A-AS

    Ic 7442

    Abstract: No abstract text available
    Text: 16 MEG DRAM DRAM DIE MT4 C 4 M4 B 1 D2 1 A FEATURES DIE OUTLINE Top View • • • • • B— □— B— 0— 0— 23 25 27 28 29 22 — o 20— a 19 — 0 17— 0 o— 30 I CO T“ Single 5.0V power supply Industry-standard x4 timing and functions


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    PDF 150mm 113x113 Ic 7442