Untitled
Abstract: No abstract text available
Text: ’2000.4.15 Ni-Cd/Ni-MH Batteries Charger Protector ICs R5440N2xxA Series n OUTLINE The R5440N2xxA Series are protection ICs for chargers of 2 serial Ni-Cd/Ni-MH batteries by CMOS process. For example, despite a charger is exclusively used for Ni-Cd or NiMH rechargeable batteries, in case that a user would try to charge Al-Mn
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R5440N2xxA
R5440N
1N4001A
2SB1028EM
R5440N2XXA
100ms
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KRC108S
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC108S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NI No. 1 Item Marking Device Mark NI KRC108S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KRC108S
OT-23
KRC108S
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A09 smd
Abstract: RF SOT23 SMALL SIGNAL SCHOTTKY DIODE 78 DIODE SMD Diode smd code 202 smd diode br RB495D smd schottky diode
Text: RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT23 A Features F B E Low VF, Low IR, High Reliability Schottky Diode Surface device type mounting Moisture sensitivity level 1 G C D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant
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RB495D
350mA,
OT-23
MIL-STD-202,
A09 smd
RF SOT23
SMALL SIGNAL SCHOTTKY DIODE
78 DIODE SMD
Diode smd code 202
smd diode br
RB495D
smd schottky diode
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CHBTA13GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHBTA13GP SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION * High current gain applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) .086 (2.20) .007 (0.177) * NI .045 (1.15)
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CHBTA13GP
OT-23
OT-23)
1200mA)
CHBTA13GP
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MMBT2907A
Abstract: No abstract text available
Text: MMBT2907A Taiwan Semiconductor Small Signal Product 350mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant
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MMBT2907A
350mW,
OT-23
MIL-STD-202,
C/10s
008grams
S1405005
MMBT2907A
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bav99
Abstract: SOT23 BAW56 BAW56
Text: BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant
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BAW56,
BAV70,
BAV99
225mW
OT-23
OT-23
MIL-STD-202,
260oC/10s
008grams
bav99
SOT23 BAW56
BAW56
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x1 transistor
Abstract: SOT-23 X1 h 033 CHBTA13PT
Text: CHENMKO ENTERPRISE CO.,LTD CHBTA13PT SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION * High current gain applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) .086 (2.20) .007 (0.177) * NI .028 (0.70)
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CHBTA13PT
OT-23
OT-23)
1200mA)
x1 transistor
SOT-23 X1
h 033
CHBTA13PT
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Untitled
Abstract: No abstract text available
Text: BAS116 225mW SMD Switching Diode Small Signal Diode Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Case : SOT- 23 small outline plastic package Package
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BAS116
225mW
150mA
OT-23
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Resistance characteristic Ni1000
Abstract: ni1000 Ni1000 temperature sensor zni 1000 design ideas EK 110 DIN43760 TS16949 ZNI1000 ZNI1000TA
Text: ZNI1000 Temperature sensor Description The ZNI1000 is a Ni thin film Resistance Temperature Detector RTD , specified to DIN 43760. The high temperature coefficient offers higher signal outputs than other RTD's, which results in higher accuracy with smaller temperature changes.
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ZNI1000
ZNI1000
ZNI1000TA
ZNI1000TC
D-81541
Resistance characteristic Ni1000
ni1000
Ni1000 temperature sensor
zni 1000
design ideas
EK 110
DIN43760
TS16949
ZNI1000TA
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Untitled
Abstract: No abstract text available
Text: BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC846A/B,
BC847A/B/C,
BC848A/B/C
MIL-STD-202,
C/10s
OT-23
008gram
S1404004
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BAV99
Abstract: No abstract text available
Text: BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Fast switching speed - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant
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BAW56,
BAV70,
BAV99
225mW
OT-23
OT-23
MIL-STD-202,
260oC/10s
008grams
BAV99
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Schottky
Abstract: KL3 SMD diode marking code e14 SMD kl4 surface mount diode kl3 diode
Text: BAT54 / A / C / S Taiwan Semiconductor Small Signal Product 230mW SMD Schottky Barrier Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant
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BAT54
230mW
OT-23
OT-23
MIL-STD-202,
C/10s
S1404001
Schottky
KL3 SMD diode
marking code e14 SMD
kl4 surface mount diode
kl3 diode
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DIN43760
Abstract: ni1000 Ni1000-SOT Resistance characteristic Ni1000 Ni1000 temperature sensor ni1000 DIN 43760 ZNI1000 ZNI1000TA ZNI1000TC
Text: ZNI1000 TEMPERATURE SENSOR DESCRIPTION The ZNI1000 is a Ni thin film Resistance Temperature Detector RTD , specified to DIN 43760. The high temperature coefficient offers higher signal outputs than other RTD’s, which results in higher accuracy with smaller temperature changes.
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ZNI1000
ZNI1000
ZNI1000TA
ZNI1000TC
Ni1000
DIN43760
ni1000
Ni1000-SOT
Resistance characteristic Ni1000
Ni1000 temperature sensor
ni1000 DIN 43760
ZNI1000TA
ZNI1000TC
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Untitled
Abstract: No abstract text available
Text: BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product 250mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC846A/B,
BC847A/B/C,
BC848A/B/C
250mW,
MIL-STD-202,
OT-23
C/10s
008gram
S1402003
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Ni1000
Abstract: Resistance characteristic Ni1000 DIN43760 ZNI1000 ZNI1000TA ZNI1000TC
Text: ZNI1000 TEMPERATURE SENSOR DESCRIPTION The ZNI1000 is a Ni thin film Resistance Temperature Detector RTD , specified to DIN 43760. The high temperature coefficient offers higher signal outputs than other RTD’s, which results in higher accuracy with smaller temperature changes.
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ZNI1000
ZNI1000
ZNI1000TA
ZNI1000TC
Ni1000
Ni1000
Resistance characteristic Ni1000
DIN43760
ZNI1000TA
ZNI1000TC
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Untitled
Abstract: No abstract text available
Text: BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC817-16/-25/-40
300mW,
MIL-STD-202,
OT-23
C/10s
008gram
S1404005
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SN 357 ..C
Abstract: BAV99 soldering Diode bav99 8 BAV99 application BAV70 BAV99 BAW56 225MW
Text: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features Fast switching speed, High conductance B E Surface device type mounting Moisture sensitivity level 1 C Matte Tin Sn lead finish with Nickel(Ni) underplate Unit (mm)
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BAW56,
BAV70,
BAV99
225mW
OT-23
OT-23
MIL-STD-202,
SN 357 ..C
BAV99 soldering
Diode bav99 8
BAV99 application
BAV70
BAV99
BAW56
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RF sot-23
Abstract: BAV70 BAV99 BAW56 Diode BAV99 SOT23
Text: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features Fast switching speed, High conductance B Surface device type mounting E Moisture sensitivity level 1 C Matte Tin Sn lead finish with Nickel(Ni) underplate Unit (mm)
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BAW56,
BAV70,
BAV99
225mW
OT-23
OT-23
MIL-STD-202,
RF sot-23
BAV70
BAV99
BAW56
Diode BAV99 SOT23
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Untitled
Abstract: No abstract text available
Text: BAS16 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant
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BAS16
225mW
OT-23
OT-23
MIL-STD-202,
C/10s
S1312001
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SC70A
Abstract: No abstract text available
Text: SC70-Adaptor RE906 - FR4 EPOXY fibre-glass 1.50 mm double-sided 35 µm CU pth - Solder and component side with chem. NI/AU surface and solder stop mask - Suitable for 2.54 mm grid (hole dia 1,00 mm) and 1,27 mm grid (hole dia 0,30 mm) - adapter for 2 x 4 pads for SC70, SOT23 (pitch 0,65 mm)
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SC70-Adaptor
RE906
SC70A
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CARSEM
Abstract: SOIC-36 2118M 1232L 80CH11
Text: RELIABILITY MONITOR SAMPLING PLAN PRODUCT 2401 2502 2502 1992 1233 1232L 1000 1803 1267 80C320 87C520 5002 80CH11 3801 3816C 1230 1775 2154 21352 21Q43A 2175 21S07A 2108 2118M 1620 1302 12887 1643 1646 1644 9034 FAMILY TECHNOLOGY AUTO. ID. 0.6 Ox Ni AUTO. ID.
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1232L
80C320
87C520
80CH11
3816C
21Q43A
21S07A
2118M
SOIC150
OT223
CARSEM
SOIC-36
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RP400N
Abstract: RP400K001A
Text: RP400xxx1A SERIES HIGH EFFICIENCY, SMALL PACKAGES, STEP-UP DC/DC CONVERTERS NO.EA-193-100331 OUTLINE RP400xxx1A Series are high efficiency, step-up DC/DC converter ICs packaged in compact 5pin SOT23 or 6pin DFN PLP . This converter starts up of low voltage (Typ.0.8V) operation up to two alkaline or a single Ni-MH or Li+
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RP400xxx1A
EA-193-100331
Room403,
Room109,
RP400N
RP400K001A
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667 transistor ecb
Abstract: EVL32-060 A50L-0001-0109
Text: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)
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OCR Scan
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PDF
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O-237
667 transistor ecb
EVL32-060 A50L-0001-0109
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laser 6 pin Oscillator
Abstract: Resistor Set Oscillator
Text: EL6205C KmmmmmmmSmt ni€>h ;•: ; EL6205C „ . # Laser Unver Usciluitor Features General Description • Low power dissipation The EL6205C consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface
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OCR Scan
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PDF
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EL6205C
60MHz
600MHz
100mA
EL6205C
EL6205CW
OT-23
MDP0038
laser 6 pin Oscillator
Resistor Set Oscillator
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