Untitled
Abstract: No abstract text available
Text: w o n 6fJl i 4 n DIODE OBIUHE CBEÆEHH« AeMn<j epHtiH æhoæ 6/11411 rrpe/ma3HaHeH juin pa6oT b l B ÖJIOKaX CTpOHHOH p a 3 B e p T K H TejieBH 3H O H H bIX n p w 6MHHKOB. KaTOfl — oKCHÆHbiK KocBeHHoro HaKajia. Macca He 6ojiee 20 r. GENERAL The 6^1411 damping diode has been designed for use
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6X103
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jd 1803 IC
Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Text: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-
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143HejTHH
jd 1803 IC
cctkc
OB 3309 RP
soviet
cathode ray
siek 1
6H23
DSAGER00034
ROD PENTODE
S3 TRIO 64
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65k5
Abstract: 65K51II
Text: HEHTOß PENTODE m m OBIIÎHE CBE^EHHfl GENERAL BfclCOKOHaCTOTHfclH neH T O fl 65K51II C KOpOTKOH x a paKTepHCTHKOH n p e /iH a 3 HaHeH z u ih y a u ie H H H H a n p a a c e - The 6 K51I1 high-frequency short-characteristic pentode has been designed to amplify intermediate-frequency voltage in wide-band amplifiers.
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65K51II
nHana30He
B03jyxa
65k5
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6K32N
Abstract: No abstract text available
Text: 6M32I1 ÜEHTO/J PENTODE OEIItflE CBE/JEHHH IleHTOfl 6 K3 2 n n p e aH a 3 H a n e H ß jisi p a ö o T b i GENERAL b n e p B b ix KacKaaax 3ByK03anHCMBaiomeH h 3ByK0B0cnp0H3B0aKm eH a n n a p a T y p b i n p H riHTaHHH u e n e ö H a x aJia ot n e p e MeHHOrO HJIH nOCTOHHHOrO TOKa.
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6N32fl
63K32FI
K34eHHe)
6K32N
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