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    Rochester Electronics LLC NGTB15N120LWG

    IGBT TRENCH FS 1200V 30A TO-247
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    onsemi NGTB15N120LWG

    IGBT TRENCH FS 1200V 30A TO-247
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    NGTB15N120LWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB15N120LWG On Semiconductor NGTB15 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

    NGTB15N120LWG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    15N120L

    Abstract: 15N12 NGTB15N120LWG
    Text: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB15N120LWG NGTB15N120L/D 15N120L 15N12 PDF

    Untitled

    Abstract: No abstract text available
    Text: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB15N120LWG NGTB15N120L/D PDF

    15N12

    Abstract: No abstract text available
    Text: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB15N120LWG NGTB15N120L/D 15N12 PDF