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    NGB8207ANT4G Search Results

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    NGB8207ANT4G Price and Stock

    Rochester Electronics LLC NGB8207ANT4G

    IGBT 365V 20A D2PAK
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    DigiKey NGB8207ANT4G Bulk 245
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    onsemi NGB8207ANT4G

    IGBT 365V 20A 165W D2PAK3
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    DigiKey NGB8207ANT4G Reel 800
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    Rochester Electronics NGB8207ANT4G 19,200 1
    • 1 $1.18
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    NGB8207ANT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGB8207ANT4G On Semiconductor Ignition IGBT 20 A, 365 V, N-Channel Original PDF

    NGB8207ANT4G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8207ANG

    Abstract: 405C NGB8207ANT4G NGB8207AN-D
    Text: NGB8207AN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		NGB8207AN NGB8207AN/D 8207ANG 405C NGB8207ANT4G NGB8207AN-D PDF

    NGB8207AB

    Abstract: ignition IGBT 8207A
    Text: NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8207AN, NGB8207ABN NGB8207AN/D NGB8207AB ignition IGBT 8207A PDF

    Untitled

    Abstract: No abstract text available
    Text: NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		NGB8207AN, NGB8207ABN NGB8207AN/D PDF