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    NF 829 Search Results

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    NF 829 Price and Stock

    NIC Components Corp NAN-F829-2200DBAX100AF

    LTE - Bulk (Alt: NAN-F829-2200DBAX1)
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    Avnet Americas NAN-F829-2200DBAX100AF Bulk 1,000
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    Glenair Inc 319AS001NF2208-29

    Circular MIL Spec Strain Reliefs & Adapters
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    Mouser Electronics 319AS001NF2208-29
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    Glenair Inc 440HS038-0829NF

    Circular MIL Spec Backshells 26+ start 3 weeks AOC
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    Mouser Electronics 440HS038-0829NF
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    Glenair Inc 440AA038-0829NF

    Circular MIL Spec Backshells 26+ start 3 weeks AOC
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    Mouser Electronics 440AA038-0829NF
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    Glenair Inc 440HA038-0829NF

    Circular MIL Spec Backshells 26+ start 3 weeks AOC
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    Mouser Electronics 440HA038-0829NF
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    NF 829 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF


    Original     		PDF F-67441

    Untitled

    Abstract: No abstract text available
    Text: 9 =W S age TNC P H Ro oir / See CONDENSATEURS CHIPS CERAMIQUE MULTICOUCHES MULTILAYER CERAMIC CHIP CAPACITORS Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards E12 E24 E48 E96


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TCE 11 TCE 13 CONDENSATEURS CERAMIQUE MOULES CLASSE 1 MOLDED CERAMIC CAPACITORS CLASS 1 NP0 NP0 NP0 -150 ppm/°C NP0 Conformes aux spécifications des normes CECC 30600 et NF C 83131 In accordance with the specifications of CECC 30600 and NF C 83131 standards


    Original     		PDF

    0603CG

    Abstract: No abstract text available
    Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors


    Original     		PDF Size1210 16V-to100V 50-to-500V 3-to-50V 0603CG

    General purpose NP0

    Abstract: No abstract text available
    Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors


    Original     		PDF Size1210 16V-to100V 50-to-500V 3-to-50V General purpose NP0

    FSU01LG

    Abstract: Eudyna Devices
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU01LG FSU01LG Eudyna Devices

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU01LG FSU01LG

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU01LG FSU01LG

    General purpose NP0

    Abstract: No abstract text available
    Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Oct 26, 2009 V.2 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose NP0


    Original     		PDF 16V-to100V 50-to-500V 3-to-50V General purpose NP0

    fujitsu GHz gaas fet

    Abstract: fujitsu gaas fet FSU01LG
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU01LG FSU01LG FCSI0598M200 fujitsu GHz gaas fet fujitsu gaas fet

    YAGEO

    Abstract: General purpose NP0
    Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – June 14, 2011 V.7 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose


    Original     		PDF Size1210 16V-to100V 50-to-500V 3-to-50V YAGEO General purpose NP0

    FSU01LG

    Abstract: No abstract text available
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU01LG FSU01LG

    YNM0007

    Abstract: YNM0008 General purpose NP0
    Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jan 06, 2011 V.6 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose


    Original     		PDF 16V-to100V 50-to-500V 3-to-50V YNM0007 YNM0008 General purpose NP0

    452 fet

    Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
    Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU01LG 12GHz FSU01LG FCSI0598M200 452 fet fujitsu GHz gaas fet fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: plerowTM ALN0855 Internally Matched LNA Module Features Description • S21 = 27.4 dB@829 MHz = 26.6 dB@881 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5 V Supply · High OIP3@Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount


    Original     		PDF ALN0855 25x25mm 13x13mm)

    fujitsu gaas fet

    Abstract: fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet fujitsu GHz gaas fet

    FSU02LG

    Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG Dissipa4888 Eudyna Devices FUJITSU RF 053 DC bias of gaas FET

    phycomp capacitors npo

    Abstract: YNM0007 YNM0008 General purpose NP0
    Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jun 02, 2009 V.1 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors SCOPE This specification describes NP0


    Original     		PDF 16V-to100V 50-to-500V 3-to-50V phycomp capacitors npo YNM0007 YNM0008 General purpose NP0

    Untitled

    Abstract: No abstract text available
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG Eud49

    1084 fet

    Abstract: fujitsu gaas fet fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 1084 fet fujitsu gaas fet fujitsu GHz gaas fet

    5503 FET

    Abstract: 5503 GM FSU02LG FSU02
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG 5503 FET 5503 GM FSU02

    Untitled

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - ZEL-0812LN Amplifier print this page ZEL-0812LN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00


    Original     		PDF ZEL-0812LN

    General purpose NP0

    Abstract: No abstract text available
    Text: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Apr 15, 2009 V. 0 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors SCOPE This specification describes NP0


    Original     		PDF 16V-to100V 50-to-500V 3-to-50V General purpose NP0

    FSU02LG

    Abstract: v 4836 fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 v 4836 fujitsu GHz gaas fet