Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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NESG2046M33
NESG2046M33
NESG2046M33-T3
NESG2046M33-A
NESG2046M33-T3-A
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SYMS
Abstract: No abstract text available
Text: Backshells and Accessories 189-009 Banding Backshell / Molding Adapter For MIL-PRF-28876 Connectors 189 S 009 NF 13 08-04 Length 1/2” Increments See Note 2 Product Series Angular Function H = 45° J = 90° S = Straight Pressure Ring (See Note 4) O-Ring
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MIL-PRF-28876
SYMS
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M33 nec
Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2046M33
NESG2046M33-T3
M33 nec
M33 TRANSISTOR
NESG2046M33
marking T7
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC2F100-S CLIPS 17186145422 Page 1/5 080425/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F100-S CLIPS Introduction Principle of HC2F CLIPS Family
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HC2F100-S
Mpa/100
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC6H1000-S 18198151434 Page 1/ 5 080407/3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6H1000-S Introduction Principle of HC6H Family The HC6H Family is for use on the electronic measurement of
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HC6H1000-S
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC2F150-S CLIPS 17186145422 Page 1/ 5 080428/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F150-S CLIPS Introduction Principle of HC2F CLIPS Family
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HC2F150-S
Mpa/100
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC6F800-S 18198102215 Page 1/ 5 080401/2 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6F800-S Introduction Principle of HC6F Family The HC6F Family is for use on the electronic measurement of
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HC6F800-S
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC2F140-S CLIPS 17186145422 Page 1/ 5 080428/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F140-S CLIPS Introduction Principle of HC2F CLIPS Family
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HC2F140-S
Mpa/100
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC6H700-S 18198151434 Page 1/ 5 080402/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6H700-S Introduction Principle of HC6H Family The HC6H Family is for use on the electronic measurement of
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HC6H700-S
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC6F700-S 18198102215 Page 1/5 080401/2 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6F700-S Introduction Principle of HC6F Family The HC6F Family is for use on the electronic measurement of
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HC6F700-S
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC2F250-S CLIPS 17186145422 Page 1/ 5 080429/1 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HC2F250-S CLIPS Introduction Principle of HC2F CLIPS Family
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HC2F250-S
Mpa/100
JESD22-A114-B
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AT91SAM920
Abstract: cadstar AT91SAM9260 AT91SAM9260-EK ARM926 AT91SAM hyperlynx atmel application note AT91SAM9260 Electrical Characteristics hyperlynx atmel
Text: Signal Integrity and Power Integrity Analysis around the SDRAM Bus Activity Using an AT91SAM9260 Microcontroller 1. Introduction In the past, the primary concern for digital designers was to ensure timing compatibility between on-board devices. Device specifications pertaining to setup and hold
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AT91SAM9260
06-Jul-09
AT91SAM920
cadstar
AT91SAM9260-EK
ARM926
AT91SAM
hyperlynx
atmel application note
AT91SAM9260 Electrical Characteristics
hyperlynx atmel
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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09A7H
Abstract: No abstract text available
Text: P1480 LAN CAM P1480 LAN CAM 1kx64-Bit CMOS Preliminary Information Supersedes February 1992 edition - version 1 DS3112 - 2.0 September 1995 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory CAM aimed at address filtering applications in Local-area Network (LAN) bridges
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P1480
P1480
1kx64-Bit
DS3112
64-bit
64-bits
09A7H
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44-PIN
Abstract: DS3112 P1480
Text: P1480 LAN CAM P1480 LAN CAM 1kx64-Bit CMOS Preliminary Information Supersedes February 1992 edition - version 1 DS3112 - 2.0 September 1995 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory CAM aimed at address filtering applications in Local-area Network (LAN) bridges
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P1480
P1480
1kx64-Bit
DS3112
64-bit
23all
44-PIN
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et1600
Abstract: No abstract text available
Text: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.
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TCET1600
TCET4600
TCET1600/
TCET2600/
TCET4600
16-lead
11-Ja
TCET2600
et1600
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2SC5317FT
Abstract: No abstract text available
Text: T O S H IB A 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2i e|2= 9dB (f=2GHz)
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2SC5317FT
16GHz
2SC5317FT
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2SC5322FT
Abstract: No abstract text available
Text: TOSHIBA 2SC5322FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT O V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB f=2GHz High Gain : |S2i e|2= 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05
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2SC5322FT
2SC5322FT
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2SC5256FT
Abstract: VHF-UHF Band Low Noise Amplifier
Text: TOSHIBA 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2l e|2= 9.5dB (f=2GHz) 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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2SC5256FT
2SC5256FT
VHF-UHF Band Low Noise Amplifier
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2SC5261FT
Abstract: No abstract text available
Text: 2SC5261FT TOSHIBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261FT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : |S2i e|2= 9.5dB (f=2GHz) 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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2SC5261FT
2SC5261FT
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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Untitled
Abstract: No abstract text available
Text: DISTINCTIVE CHARACTERISTICS 512 X 64-bit version of the popular MU9C1480 CMOS Content-addressable Memory CAM Two Mask registers allow masking of individual bits for both writing and comparing 64-bit internal data path multiplexed over a 16-bit I/O interface
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64-bit
MU9C1480
16-bit
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0309H
Abstract: No abstract text available
Text: *4 Î99S DISTINCTIVE CHARACTERISTICS 1K X 64-bit CMOS Content-addressable Memory CAM Vertical cascading and system flag generation require no external logic Memory Array width can be configured as a mixture of CAM and RAM on 16-bit boundaries to provide a flexible
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64-bit
16-bit
16-bit
MU9C1640
0309H
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