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    NEWMARKET TRANSISTORS Search Results

    NEWMARKET TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    NEWMARKET TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Newmarket Transistors

    Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
    Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu


    Original     		PDF ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Newmarket Transistors sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123

    2N2458

    Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2631T1R R07DS0991EJ0101 Rev.1.01 Sep 04, 2013 P-CHANNEL MOSFET –20 V, –6.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2631T1R R07DS0991EJ0101 PA2631T1R 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2670T1R R07DS0833EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –20 V, –3.0 A, 79 mΩ Description The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2670T1R R07DS0833EJ0101 PA2670T1R 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 Nov 28, 2012 –30 V, –85 A, 2.8 mΩ Description The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features • VDSS = −30 V TA = 25°C


    Original     		PDF PA2739T1A R07DS0885EJ0102 PA2739T1A PA2739T1A-E2-AYâ

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet N0439N N-channel MOSFET R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 40 V, 90 A, 3.3 mΩ Description This product is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS on = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )


    Original     		PDF N0439N R07DS1065EJ0100 O-220 N0439N-S19-AY

    PA2660T1R

    Abstract: No abstract text available
    Text: Data Sheet PA2660T1R R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2660T1R PA2660T1R R07DS0999EJ0100 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2630T1R R07DS0990EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –12 V, –7.0 A, 28 mΩ Description The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2630T1R PA2630T1R R07DS0990EJ0100 6pinHUSON2020 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2672T1R R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –12 V, –4.0 A, 67 mΩ Description The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2672T1R R07DS0834EJ0101 PA2672T1R 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2631T1R R07DS0991EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –20 V, –8.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2631T1R PA2631T1R R07DS0991EJ0100 6pinHUSON2020 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2600T1R PA2600T1R R07DS0998EJ0100 6pinHUSON2020 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0101 Rev.1.01 Sep 04, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2600T1R R07DS0998EJ0101 PA2600T1R 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP89N055MUK, NP89N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0600EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


    Original     		PDF NP89N055MUK, NP89N055NUK R07DS0600EJ0100 AEC-Q101 NP89N055MUK-S18-AY O-220 MP-25K) NP89N055NUK-S18-AY O-262 MP-25SK)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N04VDK R07DS1017EJ0100 Rev.1.00 Feb 21, 2013 40 V – 90 A – N-channel Power MOS FET Application: Automotive Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP90N04VDK R07DS1017EJ0100 NP90N04VDK AEC-Q101 NP90N04VDK-E1-AY NP90N04VDK-E2-AY O-252

    NP45N06PUK

    Abstract: NP45N06VUK
    Text: Preliminary Data Sheet NP45N06VUK, NP45N06PUK R07DS0953EJ0100 Rev.1.00 Nov 20, 2012 60 V – 45 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP45N06VUK, NP45N06PUK R07DS0953EJ0100 AEC-Q101 NP45N06VUK-E1-AY NP45N06VUK-E2-AY NP45N06PUK-E1-AY NP45N06PUK-E2-AY O-252 NP45N06PUK NP45N06VUK

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N055MUK, NP90N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0602EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


    Original     		PDF NP90N055MUK, NP90N055NUK R07DS0602EJ0100 AEC-Q101 NP90N055MUK-S18-AY O-220 MP-25K) NP90N055NUK-S18-AY O-262 MP-25SK)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP89N04MUK, NP89N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0599EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


    Original     		PDF NP89N04MUK, NP89N04NUK R07DS0599EJ0100 AEC-Q101 NP89N04MUK-S18-AY O-220 MP-25K) NP89N04NUK-S18-AY O-262 MP-25SK)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP75N055YUK R07DS1005EJ0100 Rev.1.00 Feb 08, 2013 55 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP75N055YUK R07DS1005EJ0100 NP75N055YUK AEC-Q101 NP75N055YUK-E1-AY NP75N055YUK-E2-AY

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP75N04YUK R07DS1004EJ0100 Rev.1.00 Feb 08, 2013 40 V – 75 A – N-channel Power MOS FET Application: Automotive Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP75N04YUK R07DS1004EJ0100 NP75N04YUK AEC-Q101 NP75N04YUK-E1-AY NP75N04YUK-E2-AY

    np90n04muk

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP90N04MUK, NP90N04NUK MOS FIELD EFFECT TRANSISTOR R07DS0601EJ0100 Rev.1.00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance


    Original     		PDF NP90N04MUK, NP90N04NUK R07DS0601EJ0100 AEC-Q101 NP90N04MUK-S18-AY NP90N04NUK-S18-AY O-220 MP-25K) O-262 MP-25SK) np90n04muk

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP50N04YUK R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 40 V – 50 A – N-channel Power MOS FET Application: Automotive Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP50N04YUK R07DS1003EJ0100 NP50N04YUK AEC-Q101 NP50N04YUK-E1-AY NP50N04YUK-E2-AY

    Cv7003

    Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
    Text: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm


    OCR Scan     		PDF 2772SC 7726A 27727X. 34768X GET103 31419X BS9300-C084) 31428H GET116 31420B Cv7003 Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


    OCR Scan     		PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


    OCR Scan     		PDF