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    6PINHUSON2020 Search Results

    6PINHUSON2020 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2672T1R-E2-AX Renesas Electronics Corporation Pch Dual Power Mosfet -12V -4A 67Mohm 6Pinhuson2020 Visit Renesas Electronics Corporation
    UPA2670T1R-E2-AX Renesas Electronics Corporation Pch Dual Power Mosfet -20V -3.0A 79Mohm 6Pinhuson2020 Visit Renesas Electronics Corporation
    UPA2631T1R-E2-AX Renesas Electronics Corporation Pch Single Power Mosfet -20V -6.0A 32Mohm 6Pinhuson2020 Visit Renesas Electronics Corporation
    UPA2690T1R-E2-AX Renesas Electronics Corporation Nch/Pch Dual Power Mosfet 20V 4.0A 42Mohm 6Pinhuson2020 Visit Renesas Electronics Corporation
    UPA2630T1R-E2-AX Renesas Electronics Corporation Pch Single Power Mosfet -12V -7.0A 28Mohm 6Pinhuson2020 Visit Renesas Electronics Corporation

    6PINHUSON2020 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2631T1R R07DS0991EJ0101 Rev.1.01 Sep 04, 2013 P-CHANNEL MOSFET –20 V, –6.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2631T1R R07DS0991EJ0101 PA2631T1R 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2670T1R R07DS0833EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –20 V, –3.0 A, 79 mΩ Description The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2670T1R R07DS0833EJ0101 PA2670T1R 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2690T1R R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2690T1R R07DS1000EJ0101 PA2690T1R

    PA2660T1R

    Abstract: No abstract text available
    Text: Data Sheet PA2660T1R R07DS0999EJ0100 Rev.1.00 Jan 16, 2013 DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 mΩ Description The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2660T1R PA2660T1R R07DS0999EJ0100 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2630T1R R07DS0990EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –12 V, –7.0 A, 28 mΩ Description The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2630T1R PA2630T1R R07DS0990EJ0100 6pinHUSON2020 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2600T1R PA2600T1R R07DS0998EJ0100 6pinHUSON2020 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2600T1R R07DS0998EJ0101 Rev.1.01 Sep 04, 2013 N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2600T1R R07DS0998EJ0101 PA2600T1R 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2672T1R R07DS0834EJ0100 Rev.1.00 Jul 19, 2012 DUAL P-CHANNEL MOSFET –12 V, –4.0 A, 67 mΩ Description The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2672T1R PA2672T1R R07DS0834EJ0100 6pinHUSON2020 PA2672T1R-E2-AX1

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2670T1R R07DS0833EJ0100 Rev.1.00 Jul 17, 2012 DUAL P-CHANNEL MOSFET –20 V, –3.0 A, 79 mΩ Description The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2670T1R PA2670T1R R07DS0833EJ0100 PA2670T1R-E2-AX1 6pinHUSON2020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2672T1R R07DS0834EJ0101 Rev.1.01 Apr 15, 2013 DUAL P-CHANNEL MOSFET –12 V, –4.0 A, 67 mΩ Description The μPA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2672T1R R07DS0834EJ0101 PA2672T1R 6pinHUSON2020

    PA2690T1R

    Abstract: No abstract text available
    Text: Data Sheet PA2690T1R R07DS1000EJ0100 Rev.1.00 Jan 16, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2690T1R PA2690T1R R07DS1000EJ0100

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2631T1R R07DS0991EJ0100 Rev.1.00 Dec 27, 2012 P-CHANNEL MOSFET –20 V, –8.0 A, 32 mΩ Description The μPA2631T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications


    Original     		PDF PA2631T1R PA2631T1R R07DS0991EJ0100 6pinHUSON2020 6pinHUSON2020