NEW ENGLAND SEMICONDUCTOR TRANSISTORS Search Results

NEW ENGLAND SEMICONDUCTOR TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

NEW ENGLAND SEMICONDUCTOR TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823	Original	MIL-PRF-19500/375 2N3821, 2N3822, 2N3823 MIL-PRF-19500/385 -2N4856, 2N4857, 2N4858, 2N4860, 2N4861	PDF
Untitled Abstract: No abstract text available Text: New England Semiconductor is an ISO9001 and JANS qualified manufacturer of bipolar transistors, power and small signal, ultra-fast rectifiers, silicon controlled rectifiers, zener diodes and J-fets. Over the past few years we have provided thousands of devices, surface mount and metal can, to the aerospace industry processed to the "S"	Original	ISO9001 ISO9001 JANS19500	PDF
NS11016 Abstract: No abstract text available Text: AŒ y ^ IP NS11016 NEW ENGLAND SEMICONDUCTOR NPN SILICON DARLINGTON POWER TRANSISTORS • GENERAL PURPOSE AMPLIFIER • LOW FREQUENCY SWITCHING • HIGH DC CURRENT GAIN • MONOLITHIC CONSTRUCTION • BUILT IN BASE EMITTER SHUNT RESISTORS • CONFORMAL COATED	OCR Scan	NS11016 T0-204AA NS11016 10ILITY	PDF
2N3738 Abstract: 2N3739 new england semiconductor transistors Text: 2N3738^ 2N3739* MW ^NEW ENGLAND SEMICONDUCTOR ^ *also available as JAN, JANTX, HIGH VOLTAGE SILICON POWER TRANSISTORS 1.0 AMPERE POWER TRANSISTORS NPN SILICON .designed for high-speed sw itching, linear am plifier applications, high-voltage operational am plifiers, sw itching regulators, converters,	OCR Scan	2N3738 2N3739' 2N3738) 2N3739) 2N3739 Collector100% new england semiconductor transistors	PDF
Untitled Abstract: No abstract text available Text: 0 /V E F ^ IP NSX14 r NEW ENGLAND SEMICONDUCTOR EPITAXIAL BASE PNP SILICON TRANSISTORS • • LF LARGE SIGNAL POWER AMPLIFIER MEDIUM CURRENT SWITCHING ABSOLUTE RA TIN G S RA TING S Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	NSX14	PDF
Untitled Abstract: No abstract text available Text: Ct\fiiE5r Back to Bipolar Small Signal C9853 ^ QP ^NEW ENGLAND SEMICONDUCTOR LOW LEVEL SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS • LOW EC (sat • HIGH BVebo • ULTRA LOW LEAKAGE • LOW C* ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS M H A M ETC II	OCR Scan	C9853 C9S53	PDF
NSX14 Abstract: No abstract text available Text: 0/V E F ^ IP NSX14 NEW ENGLAND SEMICONDUCTOR EPITAXIAL BASE PNP SILICON TRANSISTORS • • LF LARGE SIGNAL POWER AMPLIFIER MEDIUM CURRENT SWITCHING A BSO LU TE R A TIN G S R ATING S Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	NSX14 NSX14	PDF
2N4300 Abstract: No abstract text available Text: 0/V E F ^ IP 2N4300 NEW ENGLAND SEMICONDUCTOR NPN EPITAXIAL PLANAR SILICON POWER TRANSISTORS NPN EPITAXIAL PLANAR SILICON POWER TRANSISTOR . for power-amplifier and high-speed-switching applications. • • • • 15 WATT @ 100°C CASE TEMPERATURE MAXIMUM VCE SAT = 0.3 VOLTS @ 1.0 AMP. Ic	OCR Scan	2N4300 2N4300 25UCJ	PDF
2N697 Abstract: No abstract text available Text: 0 /V E F ^ IP 2N697 NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • HIGH FREQUENCY • HIGH CURRENT GAIN @ • LOW SATURATION VOLTAGE NPN SMALL-SIGNAL TRANSISTOR 150 mA TO-39 TO-205AD MAXIMUM RATINGS RATINGS C ollecto r-E m itter V oltage	OCR Scan	2N697 O-205AD 2N697	PDF
T0204 Abstract: NS11015 Text: AŒ y ^ IP NS11015 NEW ENGLAND SEMICONDUCTOR PNP SILICON DARLINGTON POWER TRANSISTORS • • • • • • 30 AMPERE PNP DARLINGTON POWER TRANSISTOR GENERAL PURPOSE AM PLIFIER LOW FREQUENCY SW ITCHING HIGH DC CURRENT GAIN MONOLITHIC CONSTRUCTION BUILT IN BASE EM ITTER SHUNT RESISTORS	OCR Scan	NS11015 T0-204AA NS11015 T0204	PDF
2N3725 Abstract: TRANSISTOR 2SC 635 Text: 0/V E F ^ IP 2N3725 NEW ENGLAND SEMICONDUCTOR NPN SWITCHING TRANSISTORS • • • • FAST SWITCHING HIGH VOLTAGE HIGH CURRENT GAIN LOW SATURATION VOLTAGE M A X IM U M R A TIN G S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage	OCR Scan	2N3725 O-205AD 2N3725 30Vdc, 300ns, TRANSISTOR 2SC 635	PDF
2N706A Abstract: npn transistor wc 2N706 2n706a transistor J 2N706A Text: 0 /V E F ^ IP 2N706A NEW ENGLAND SEMICONDUCTOR SILICON SWITCHING NPN TRANSISTORS • • • FAST SWITCHING LOW SATURATION VOLTAGE HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage	OCR Scan	2N706A 2N706A 32ESTING npn transistor wc 2N706 2n706a transistor J 2N706A	PDF
2N869A Abstract: No abstract text available Text: 0 /V E F ^ IP 2N869A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE • FAST SWITCHING M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage	OCR Scan	2N869A 2N869A	PDF
2N1893 Abstract: BBV transistor lt 860 Text: TifUEF ^ 9 m 2NI893* NEW ENGLAND SEMICONDUCTOR also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS • F A M SWITCHING • liJG H FREQUENCY • H IG H C U R R E N T G A IN NPN GENERAL PURPOSE TRANSISTOR TÜ-3S T0-1 SAD MAXIMUM RATINGS	OCR Scan	N1893* 11JCH 2N1893 BBV transistor lt 860	PDF

2N930A Abstract: No abstract text available Text: 0 /V E F ^ IP 2N930A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • LOW LEAKAGE • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage	OCR Scan	2N930A 2N930A	PDF
Untitled Abstract: No abstract text available Text: Back to Bipolar Small Signal 0 /V E F ^ IP 2N869A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE • FAST SWITCHING M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage	OCR Scan	2N869A	PDF
New England Semiconductor Abstract: transistor D 1666 2N3250 Text: 0 /V E F ^ IP 2N3250 NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH VOLTAGE • HIGH FREQUENCY • HIGH CURRENT GAIN PNP GENERAL PURPOSE TRANSISTOR 1 E m itter TO-18 M A X IM U M R A T IN G S RATINGS SYMBOL 2N3250 UNITS VcEO -40 V dc	OCR Scan	2N3250 2N3250 22TESTING New England Semiconductor transistor D 1666	PDF
2N5581A Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B	OCR Scan	2N2604 2N2605 2N2944AA 2N2945 2N2945AA 2N2946 2N2946AA 2N3485 2N3485AA 2N3486 2N5581A	PDF
NS11032 Abstract: T0204 Text: NS11032 ^ IP NEW ENGLAND SEMICONDUCTOR NPN SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE NPN DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O NO LITH IC CO NSTRU CTIO N	OCR Scan	NS11032 T0-204AE NS11032 T0204	PDF
NSX16 Abstract: T4 0570 Text: NSX16 ^MW^NEW ENGLAND SEMICONDUCTOR EPIBASE PNP SILICON TRANSISTORS • • LF LARG E SIG N A L PO W ER A M PLIFIC A TIO N JU N C T IO N TO C ASE - R th - - 7°CAV M A X IM U M R A TIN G S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage	OCR Scan	NSX16 NSX16 T4 0570	PDF
ROE EB Abstract: NS11033 fd300 Text: AŒ y ^ IP NS11033 NEW ENGLAND SEMICONDUCTOR PNP SILICON DARLINGTON POWER TRANSISTORS • • • • • • 50 AMPERE PNP DARLINGTON POWER TRANSISTOR G EN ER A L PURPO SE A M PLIFIE R LO W FR EQ U EN C Y SW ITCH ING HIGH DC C U R RE N T GAIN M O N O LITH IC CO NSTRUC TIO N	OCR Scan	NS11033 T0-204AE NS11033 ROE EB fd300	PDF
Untitled Abstract: No abstract text available Text: NSX16 ^MW ^NEW ENGLAND SEMICONDUCTOR EPIBASE PNP SILICON TRANSISTORS • • LF LA RG E SIG N A L P O W E R A M PL IFIC A T IO N JU N C T IO N T O CASE - R th - - 7°CAV M A X IM U M RA TING S R A TIN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage	OCR Scan	NSX16	PDF
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PA CK A G E PN P T O -46 V C EO sus VOLTS Ic (m ax ) A M PS 2N 2605 45 0.03 150@ 0.5/5 2N 2945 20 0.1 2N 2945A 20 2N 2946 D E V IC E TY PE hfE @ Ic/ V CE m in /m ax @ m A /V ^ C E (s a t) @ I c /I b	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Back to Bipolar Power Transistors NES3716Z NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15\|is MAXIMUM RATINGS Rating Collector-Emitter Voltage	OCR Scan	NES3716Z	PDF

NEW ENGLAND SEMICONDUCTOR TRANSISTORS Search Results

NEW ENGLAND SEMICONDUCTOR TRANSISTORS Result Highlights (5)

NEW ENGLAND SEMICONDUCTOR TRANSISTORS Datasheets Context Search

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NS11016

2N3738

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NSX14

2N4300

2N697

T0204

2N3725

2N706A

2N869A

2N1893

2N930A

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New England Semiconductor

2N5581A

NS11032

NSX16

ROE EB

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