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    2N4300

    Abstract: No abstract text available
    Text: 0/V E F ^ IP 2N4300 NEW ENGLAND SEMICONDUCTOR NPN EPITAXIAL PLANAR SILICON POWER TRANSISTORS NPN EPITAXIAL PLANAR SILICON POWER TRANSISTOR . for power-amplifier and high-speed-switching applications. • • • • 15 WATT @ 100°C CASE TEMPERATURE MAXIMUM VCE SAT = 0.3 VOLTS @ 1.0 AMP. Ic


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