SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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0903010
Abstract: 2SC3816 E090101 NE0900-07
Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR *£*¡2 , NEM090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N E M 0900-07 series of NPN silicon epitaxial UH F power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.
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NEM090701-07
NE0900-07
NEM0900-07
0903010
2SC3816
E090101
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2SC3814
Abstract: NE0900-07 2SC3816 2SC3815
Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR n e m 090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N EM 0900-07 series of NPN silicon epitaxial UHF power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.
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NE0900-07
NEM0900-07
2SC3814
2SC3816
2SC3815
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2SC3538
Abstract: 2SC3539 2SC3537 B-28 NEM0900 NEM092081B-28 NEM094081B-28 NEM096081B-28 B2-8
Text: E C/ CALIFORNIA SbE D • b45?414 QOQSSbS e]fl4 INECC " ' v i s NEM092081B-28 NEM094081B-28 NEM096081B-28 CLASS C, 900 MHz, 28 VOLT POWER TRANSISTOR FEATURES r o OUTLINE DIMENSIONS Units in mm • HIGH P O W E R OUTLINE 81B • H IG H GAIN • TITAN IU M /PLA TIN U M /G O LD M ETALLIZATIO N
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NEM092081B-28
NEM094081B-28
NEM096081B-28
NEM0900
NEM092081B-28,
NEM094081B-28,
NEM092081
2SC3538
2SC3539
2SC3537
B-28
B2-8
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OB2540
Abstract: No abstract text available
Text: CLASS C, 900 MHz _ A N E M 0 9 4 28 VOLT POWER TRANSISTOR _ . _ n e m o 92 o s ib -28 0 8 1 B - 2 8 n e m o 96o s ib -28 NEM096081 B-28 OUTPUT POWER AND EFFICIENCY V » . INPUT POWER FEATURES • HIGH POWER • HIGH GAIN • TITANIUM/PLATINUM/GOLD METALLIZATION
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NEM096081
NEM0900
NEM092081B-28
NEM094081
03-j1
87-j0
TEA-561
NEM096081B-28
OB2540
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