MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
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D-40472
I-20124
I-00139
D-30177
GB-MK14
D-81925
S-18322
F-78142
E-28007
UAA 1006
manual* cygnus sl 5000
transistor marking T79 ghz
PC1658G
NEC Ga FET marking code T79
gaas fet T79
pc1658
MC-7712
2SC5431
NEC U71
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upc8236t6n
Abstract: UPC8236 GPS Integrated Circuits PC8236T6N design power amplifier for GPS
Text: RF Applications Engineering Technical Note PC8236T6N Three Circuit Configurations For GPS Application o Introduction o Circuit Description o Performance Data Introduction NEC’s uPC8236T6N is a silicon germanium carbon SiGe:C MMIC designed as low noise
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PC8236T6N
uPC8236T6N
uPG8236T6N
1575MHz
UPC8236
GPS Integrated Circuits
PC8236T6N
design power amplifier for GPS
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Prescalers
Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an
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AN1014
UPB585B
24-Hour
Prescalers
UPB582C
uPG506
UPG503
UPG506P
UPG502
uPB584
UPB584G
UPB585G
AN1014
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Prescalers
Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an
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AN1014
UPB585B
Prescalers
UPB585
uPG506
UPB584G
UPB581
UPB582C
UPG506B
AN1014
UPB582
UPB584
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UPC8182B
Abstract: GET-BE-0006
Text: .' . . . , , I GET-BE-OOO61/4 "'-.I . Qualification Test Report Si MMIC useon UHSO Process Prepared on :June26,2003 i£.( fJi$; by: YASUSHISATOH Assistant Manager Approved by : J. f~~.().Io-'J"~TOSHIAKI YOKOKA W A Manager Reliability and QC Department NEC CompoundSemiconductor
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GET-BE-0006
25GHz)
UPC8182B
3000Hrs)
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1 henry INDUCTOR
Abstract: 2 henry INDUCTOR an 17827 UPC27xxT AN1019 UPC2771T
Text: California Eastern Laboratories AN1019 APPLICATION NOTE Selecting Pull-Up Inductors For UPC27xxT Amplifiers With Open Collector Outputs NEC offers a line of silicon MMIC amplifiers with open collector outputs. These amplifiers require an external pullup inductor to supply bias to the output stage. The advantage
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AN1019
UPC27xxT
UPC2771T
UPC27xxdB
1 henry INDUCTOR
2 henry INDUCTOR
an 17827
UPC27xxT
AN1019
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UPG2214TK
Abstract: UPG2179TB UPG2301TQ LDMOS NEC amplifer UPD5702TU CC156
Text: Class 1 Power Amplifiers for Bluetooth NEW! UPG2214TK or UPG2179TB GaAs Switch IC I NEC Class One Silicon LDMOS or GaAs HBT Power Amplifier RFIC Baseband Q VCC NEW! Low Cost Silicon LDMOS UPD5702TU MMIC Power Amplifier • Output Power = 21dBm • Two Stage Device
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UPG2214TK
UPG2179TB
UPD5702TU
21dBm
155mA
UPG2301TQ
23dBm
120mA
23dBm
UPG2301TQ
LDMOS NEC
amplifer
UPD5702TU
CC156
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NEC 10F
Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.
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devic87
P12647EJ3V0PF00
NEC 10F
low-noise L-band tuner
nec mmic
Monolithic Amplifier NEC
JAPAN TRANSISTORS 1981
nec book
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UPC1670C
Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
Text: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1
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00Q2b3fl
UPC1668
UPC1669
UPC1670
UPC1668B,
UPC1668C,
UPC1670C
574 nec
UPC1668B
UPC1668C
UPC1669B
UPC1669C
UPC1670B
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cd 2003 gp
Abstract: UPC1659G uPC1659 UPC1659A UPC1659B UPC165 Monolithic Amplifier NEC pc1659
Text: NEC/ SbE D CALIFORNIA NEC • b 4 2 7 4 m DDGSbE? TS1 MN EC C T - ^ OUTLINE DIMENSIONS • W IDE-BAND PERFO RM AN CE UPC1659A/B: 0.6 to 2.3 GHz (UPC1659G: 0.6 to 1.75 GHz) . . UPC1659A UPC1659B UPC1659G 1.5 GHz BANDWIDTH SILICON MMIC AMPLIFIER FEATURES
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b4274m
UPC1659A
UPC1659B
UPC1659G
UPC1659A/B:
UPC1659G:
UPC1659A/B/G
UPC16S9G
UPC1659G
cd 2003 gp
uPC1659
UPC1659A
UPC165
Monolithic Amplifier NEC
pc1659
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Untitled
Abstract: No abstract text available
Text: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1
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UPG100B
UPG100B
3260Jay
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NEC Ga FET marking L
Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima
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GET-30749,
GET-30749
NE29200
NE674
uPG501B
uPG501P
uPG503B
uPG503P
uPG506B
NEC Ga FET marking L
tamagawa
gaas fet marking B
mmic amplifier marking code N5
NE272
FET marking code .N5
ne29200
NE23383B
NE292
gaas fet marking a
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UPG100B
Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Text: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)
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UPG100B
3260Jay
UPG100
UPG100P
power amplifier s band ghz mhz
Low Noise Amplifier 0.5 - 3.0 GHz
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nec vco
Abstract: P1314
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ PG 139GV L-BAND DPDT MMIC SWITCH DESCRIPTION The ¿¿PG139GV is L-Band Double Pole, Double Throw (DPDT switch developed for digital cellular or cordless telephone and PCS applications.
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uPG139GV
nec vco
P1314
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NEC DIE BONDER
Abstract: die-attach
Text: USER’S MANUAL NEC USER’S MANUAL FOR MICROWAVE DEVICE CHIP HANDLING [Silicon Transistors, GaAs FETs, H J-FETs, GaAs MMICs] 1. INTRODUCTION In recent years, m iniaturizing the dimensions o f electronic devices and improving device performance have been extensively
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Untitled
Abstract: No abstract text available
Text: NEC MEDIUM POWER 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER UPC1654A UPC1654B UPC1654P FEATURES DESCRIPTION AND APPLICATIONS • BROADBAND PERFO RM ANCE: 10 to 1100 MHz The UPC1654 Silicon Microwave Monolithic IC is designed for general purpose and IF amplifier applications. This
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UPC1654A
UPC1654B
UPC1654P
UPC1654
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smd+2tx
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ iP G 13 9 G V L-BAND DPDT MMIC SWITCH DESCRIPTION The ^¡PG139GV is L-Band Double Pole, Double Throw DPDT switch developed for digital cellular or cordless telephone and PCS applications.
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PG139GV
VP15-00-3
WS60-00-1
smd+2tx
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Untitled
Abstract: No abstract text available
Text: NEC 900 MHz MIXER, OSCILLATOR SILICON MMIC UPC1685B UPC1685G OUTLINE DIMENSIONS FEATURES Units in mm • W ID E-BAN D OPERATION: DC to 890 MHz OUTLINE BF08 • SMALL PACKAGE 7.0±0.5 • • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation
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UPC1685B
UPC1685G
UPC1685B
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uPC1653
Abstract: No abstract text available
Text: SILICON MMIC NEC UPC1653A/P General Purpose Wide-Band Amplifier FEATURES DESCRIPTION AND APPLICATIONS • BROAD FREQUENCY RESPONSE : 1300 MHz TYP AT 3 dB DOWN The UPC1653 Silicon Monolithic IC is designed as a wideband amplifier covering the HF through UHF bands.
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UPC1653A/P
UPC1653
UPC1654.
UPC1653A/P,
NOTICE-822
34-6393/FAX
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Untitled
Abstract: No abstract text available
Text: NEC”LOW POWER CONSUMPTION UPC2714T UPC2715T SILICON MMIC AMPLIFIER FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN
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UPC2714T
UPC2715T
UPC2715T)
UPC2714T)
UPC2714T
UPC2715T
UPC2714T/UPC2715T
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUIT SILICON MMIC 2.0 GHz FREQUENCY UPCONVERTER FOR CELLULAR TELEPHONE DESCRIPTION The ¿iPC8163TB is a silicon monolithic integrated circuit designed as frequency upconverter for cellular telephone transmitter stage. The /¿PC8163TB has improved Intermodulation performance and smaller package.
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uPC8163TB
/iPC8163TB
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UPC1670C
Abstract: pour UPC1669 UPC1670
Text: NEC HIGH ISOLATION SILICON MMIC IF AMPLIFIERS FEATURES OUTLINE DIMENSIONS • HIGH ISOLATION UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES Units in mm OUTLINE B08 1.2 7 ± 0.1 • LOW INPUT/OUTPUT RETURN LOSS 1. 27 ± 0.1 • LOW IMD DESCRIPTION AND APPLICATIONS
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UPC1668
UPC1669
UPC1670
UPC1668B,
UPC1668C,
UPC1670C
pour
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UPC1675G
Abstract: UPC1675B uPC1675 UPC1675P mmic case styles
Text: NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • WIDE BANDWIDTH: 1900 MHz TYP at 3 dB Point for UPC1675G 2100 MHz TYP at 3 dB Point for UPC1675B, UPC1675P
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UPC1675B
UPC1675G
UPC1675P
UPC1675G
UPC1675B,
UPC1675
UPC1675G)
UPC1675B)
UPC1675P)
UPC1675P
mmic case styles
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