uPD78F9212
Abstract: TPS-LE-OP-F9212 of upd78f9212 upd78f9211 marking f9212 U18104EE3V0IF00 PU22 date code marking NEC uPD78F9210 uPD78F9211
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD78F9212
U16994EJ.
U18104EE3V0IF00
TPS-LE-OP-F9212-3
TPS-LE-OP-F9212-1
TPS-LE-OP-F9212-2
uPD78F9212
TPS-LE-OP-F9212
of upd78f9212
upd78f9211 marking
f9212
U18104EE3V0IF00
PU22
date code marking NEC
uPD78F9210
uPD78F9211
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N0300N
Abstract: N0300N-T1B-AT D1978 marking xy NEC MARKING XY n0300
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR N0300N N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The N0300N is a switching device which can be driven directly by 0.4 +0.1 –0.05 0.65 –0.15 a 4.5 V power source. FEATURES
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N0300N
N0300N
N0300N-T1B-AT
D1978
marking xy
NEC MARKING XY
n0300
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pc574
Abstract: uPC574 574J C10535E PC574J nec k 1006 IC1006 uPC574C upc574 nec
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC574 MONOLITHIC BIPOLAR INTEGRATED CIRCUIT VOLTAGE STABILIZER FOR ELECTRONIC TUNER The µPC574 is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners. FEATURES
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PC574
PC574
PC574J:
PC574J
S13200EJ4V0DS00s
uPC574
574J
C10535E
PC574J
nec k 1006
IC1006
uPC574C
upc574 nec
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nec 2532
Abstract: lem 4202 NEC 2504 free ic 2034 2SC4228 NEC JAPAN 282 110 01 ic 4521 NEC+2532
Text: DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.
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PA811T
2SC4228)
PA811T
nec 2532
lem 4202
NEC 2504
free ic 2034
2SC4228
NEC JAPAN 282 110 01
ic 4521
NEC+2532
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PFA113A
Abstract: NEC 2705 opto PFA1AN PFA141B PFA122A PFA141A PFA141E ps7200 PFA112A PFA222A
Text: OPTICAL COUPLED MOS FET SELECTION GUIDE September 2000 [MEMO] 2 Selection Guide P11633EJAV0SG00 CAUTION Within this device there exits GaAs Gallium Arsenide material which is a harmful substance if ingested. Please do not under any circumstances break the
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P11633EJAV0SG00
PFA113A
NEC 2705 opto
PFA1AN
PFA141B
PFA122A
PFA141A
PFA141E
ps7200
PFA112A
PFA222A
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N0300N-T1B-AT
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC4227
Abstract: 1 928 403 698
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS amplify low noise in the VHF band to the UHF band.
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PA812T
2SC4227)
PA812T
PA812T-T1
2SC4227
1 928 403 698
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2sc4226
Abstract: 2SC4226 APPLICATION NOTES
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA810T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The µPA810T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS
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PA810T
2SC4226)
PA810T
PA810T-T1
2sc4226
2SC4226 APPLICATION NOTES
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TD-2411
Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.
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2SC5011
2SC5011-T1
2SC5011-T2
TD-2411
NEC 3552
2SC5011
2SC5011-T1
2SC5011-T2
702 mini transistor
P1039
1357 transistor NEC
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NEC 7924
Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1
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2SC5013
2SC5013-T1
2SC5013-T2
NEC 7924
ic 7924
2SC5013
2SC5013-T1
2SC5013-T2
application of IC 4538
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nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
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2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
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pc574
Abstract: uPC574 574J C10535E PC574J IC1006
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC 2561A
Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
Text: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
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NEPOC-OC-DO20051
NEC 2561A
nec 2501
NEC 2581A
opto coupler 2561A
NEC 2501A
NEC 2561A w
2581A
NEC 2501 Opto coupler
2501 photocoupler
opto 2581A
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Ic 6116 pin configuration details
Abstract: 2SC4228
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec 772
Abstract: 2SC4227
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC4570
Abstract: xy 801 ic
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1
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PA813T
2SC4570)
PA813T
PA813T-T1
2SC4570
xy 801 ic
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induction cooker fault finding diagrams
Abstract: induction cooker schematic diagram EDS SHIELD DOMESTIC GAS DETECTOR schematic diagram induction cooker 3 gun sound generator UM 3562 NEC plasma tv schematic diagram ultrasonic flaw detector LS 2027 Final Audio LS 2027 audio Ultrasonic humidifier circuit
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C12769EJ2V0IF
induction cooker fault finding diagrams
induction cooker schematic diagram
EDS SHIELD DOMESTIC GAS DETECTOR
schematic diagram induction cooker
3 gun sound generator UM 3562
NEC plasma tv schematic diagram
ultrasonic flaw detector
LS 2027 Final Audio
LS 2027 audio
Ultrasonic humidifier circuit
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lem 55.2
Abstract: UPA814T 795-29-9 2SC5193 3699 npn NEC 2506 741 LEM
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low Voltage Operation, Low Phase Distortion • Low Noise
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PA814T
2SC5193)
PA814T-T1
lem 55.2
UPA814T
795-29-9
2SC5193
3699 npn
NEC 2506
741 LEM
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GPI048
Abstract: upd3 PD30111
Text: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C
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uPD30111
ns/20
GPI048
upd3
PD30111
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3SK243
Abstract: NEC 1369
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK243 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS T h e C h a ra cte ristic of C ro ss-M o d u la tio n is good. CM = 101 d B ju T Y P . @ f = 470 MHz, G r = -3 0 dB
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3SK243
3SK243
NEC 1369
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Untitled
Abstract: No abstract text available
Text: DATA SHEET CEL GaAs HJ-FET INTEGRATED CIRCUIT flPG2253T6S RF FRONT-END 1C FOR 2.4 GHz Bluetooth , ZIGBEE, ISM BAND DESCRIPTION T h e ^P G 2 2 5 3 T 6 S is a RF front-e nd in tegrated circu it F E IC fo r B luetooth C lass 1, Z igB ee, and ISM Band and in clud es T X /B yp a ss sw itches, a po w e r am plifier, and a lo w -pa ss filter. T h is de vice do es not req uire a n y RF
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PG2253T6S
PG2253T6S
16-pin
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TRANSISTOR XL08
Abstract: XL08 TI08 T46C lj11 T 3361 001
Text: X I • I ÎS NEC m C o m p o u n d T ra n s is to r GN 1L3Z U□ > Y=7>i>^ JS if c r t i P N P x f t 9mH i t * e : mm o '< 4 t (R i = 4 .7 kQ ) B O— W V R, k? — ô E o GA1L3Z t 3 >7° U ^ > ? U T'fêfflT'ë i 1“ c (T a = 25 °C) m 3- 9 ì "/ ^ s
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CycleS50
TRANSISTOR XL08
XL08
TI08
T46C
lj11
T 3361 001
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3SK244
Abstract: 3SK244D U94 marking
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK244 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • U ltra Low N o ise F ig u r e : NF = 2.2 dB T Y P . f = 900 M Hz • High P ow er G ain
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3SK244
3SK244
3SK244D
U94 marking
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