schematic lcd inverter samsung
Abstract: AA11SB6C-ADFD lt121s1-153 nec lcd inverter schematic schematic logic board lcd monitor samsung 18,5 in samsung lcd inverter pinout LVDS connector 20 pins LCD FUJITSU 12.1 sharp lvds connector pinout RV801 LQ10DS05
Text: BACK Application Note Interfacing Genesis Microchip gmZ1 Reference Designs to LCD Panels MSD-0021-A Genesis Microchip Inc. 200 Town Centre Blvd, Suite 400, Markham, ON Canada L3R 8G5 Tel: 905 470-2742 Fax: (905) 470-9022 2071 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288
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MSD-0021-A
MSD0021A
A1394
Data1394
SiI140
schematic lcd inverter samsung
AA11SB6C-ADFD
lt121s1-153
nec lcd inverter schematic
schematic logic board lcd monitor samsung 18,5 in
samsung lcd inverter pinout
LVDS connector 20 pins LCD FUJITSU 12.1
sharp lvds connector pinout
RV801
LQ10DS05
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NEC V30MX
Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows
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NEC 2561
Abstract: transistor f422 transistor f423 nec 2561 equivalent transistor f422 equivalent transistor NEC D 882 p verilog code for 8254 timer TBA 931 nec d 882 p datasheet nec 2561 datasheet
Text: CB-C7, 3-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. Preliminary October 1993 Description Figure 1. Integrated HDD Solution with CB-C7 Cell-Based ASIC and Embedded Megafunctions The CB-C7, 3-volt cell-based product family is intended for low power portables and battery-operated products. A
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VR4131
Abstract: NEC VR4131 GHS multi CN10 CN17 MIPS16 N-Wire
Text: Preliminary User’s Manual startWARE-GHS-VR4131 Starter Kit VR4131 Document No. U16417EE1V0UM00 Date Published February 2003 NEC Corporation 2003 Printed in Germany The information in this document is subject to change without notice. No part of this document may
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startWARE-GHS-VR4131
VR4131
U16417EE1V0UM00
VR4131
NEC VR4131
GHS multi
CN10
CN17
MIPS16
N-Wire
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365
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PD44164085,
18M-BIT
PD44164085
152-word
PD44164185
576-word
18-bit
PD44164365
288-word
36-bit
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NEC UPD44164182
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362
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PD44164082,
18M-BIT
PD44164082
152-word
PD44164182
576-word
18-bit
PD44164362
288-word
36-bit
NEC UPD44164182
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364
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PD44164084,
18M-BIT
PD44164084
152-word
PD44164184
576-word
18-bit
PD44164364
288-word
36-bit
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uPD44165084
Abstract: 9p marking
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364
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PD44165084,
18M-BIT
PD44165084
152-word
PD44165184
576-word
18-bit
PD44165364
288-word
36-bit
uPD44165084
9p marking
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full
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PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
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E75 200
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362
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PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
E75 200
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365
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PD44164085,
18M-BIT
PD44164085
152-word
PD44164185
576-word
18-bit
PD44164365
288-word
36-bit
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M15821EJ2V0DS
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using
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PD44164082,
18M-BIT
PD44164082
152-word
PD44164182
576-word
18-bit
PD44164362
288-word
36-bit
M15821EJ2V0DS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using
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PD44164084,
18M-BIT
PD44164084
152-word
PD44164184
576-word
18-bit
PD44164364
288-word
36-bit
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uPD44165084
Abstract: uPD44165084F5-E30-EQ1 uPD44165084F5-E33-EQ1 uPD44165084F5-E40-EQ1 D18 D16 family nec
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full
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PD44165084,
18M-BIT
PD44165084
152-word
PD44165184
576-word
18-bit
PD44165364
288-word
36-bit
uPD44165084
uPD44165084F5-E30-EQ1
uPD44165084F5-E33-EQ1
uPD44165084F5-E40-EQ1
D18 D16 family nec
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nec 2561 equivalent
Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Text: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such
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LAN9C111
Abstract: VR4181A smd diode marking A03 IC17B samsung lcd monitor service manual smd marking A00 U16049E smc 9608 SKIP 24 NAB 12 m t11 marking ic 8pin C66
Text: User’s Manual startWARE-VR4181A Starter Kit VR4181A applies to: startWARE-GHS-VR4181A startWARE-WinCE-VR4181A startWARE-Linux-VR4181A Document No. U16646EE2V0UM00 Date Published September 2003 NEC Corporation 2003 Printed in Germany The information in this document is subject to change without notice. No part of this document may
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startWARE-VR4181A
VR4181A
startWARE-GHS-VR4181A
startWARE-WinCE-VR4181A
startWARE-Linux-VR4181A
U16646EE2V0UM00
LAN9C111
VR4181A
smd diode marking A03
IC17B
samsung lcd monitor service manual
smd marking A00
U16049E
smc 9608
SKIP 24 NAB 12 m t11
marking ic 8pin C66
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2SK170BL
Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
Text: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual
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BF1107/8
BGA2715-17
BGA6x89
2SK170BL
2SK508
tcxo philips 4322
BFG135 power amplifier for 900Mhz
2SK147BL
2sk162 hitachi
2sk170y
toshiba 2sk170bl
BF1009SW
philips rf manual
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LM2596-ADJ
Abstract: NEC c157 marking code R74 SMD Transistor VR4133 K4S511632D ad1826 short stop 12v p18 30a altera midas transistor BD 222 SMD MARKING 11C5
Text: Preliminary User’s Manual startWARE-GHS-VR4133 Starter Kit VR4133 Document No. U16916EE2V0UM00 Date Published March 2004 NEC Corporation 2004 Printed in Germany The information in this document is subject to change without notice. No part of this document may
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startWARE-GHS-VR4133
VR4133
U16916EE2V0UM00
LM2596-ADJ
NEC c157
marking code R74 SMD Transistor
VR4133
K4S511632D
ad1826
short stop 12v p18 30a
altera midas
transistor BD 222 SMD
MARKING 11C5
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AD3269
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD98405 155M ATM INTEGRATED SAR CONTROLLER DESCRIPTION TM The µPD98405 NEASCOT-S20 is a high-performance SAR chip that performs segmentation and reassembly of ATM cells. It has a PCI bus interface, a SONET/SDH 155 Mbps framer, and a clock recovery circuit and supports
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PD98405
NEASCOT-S20
PD98405
AD3269
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8251a usart interface from z80
Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design System of NEC. The family allows
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TMXP-200
L427525
8251a usart interface from z80
72065B
verilog code for 8254 timer
NEC V30MX
Rambus ASIC Cell
OPENCAD CMOS Block library
nec floppy circuit
NEC 71059
NEC 71051
V30MX
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NEC74
Abstract: JZW MARKING nec V5 microcontroller tda 2030 ic 5 pins 78P328 IEU-1248
Text: DATA SHEET MOS Integrated Circuit ¿¿PD78P322 16/8-BIT SINGLE-CHIP MICROCONTROLLER The /i PD78P322 is a version provided by replacing the ¿¿PD75322's internal mask ROM with one-time PROM or EPROM. Because the one-time PROM version is programmable only once by users, it is ideally suited for small-scale
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uPD78P322
16/8-BIT
PD78P322
PD75322
PD78P322K,
PC-9800
MS5A13FI78K3.
iiS5A10FI78K3
juS7B13FI78K3
fiS7B10FI78K3
NEC74
JZW MARKING
nec V5 microcontroller
tda 2030 ic 5 pins
78P328
IEU-1248
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Digital IC CMOS 16x1 mux
Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
Text: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A
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00437T3
V30HL
16-bit
NA80C42H
NA8250
Digital IC CMOS 16x1 mux
PART NUMBERING NEC IC DECODER
ic tba 810
f34 function generator
80c42
F981 IC
NEC VOLTAGE COMPARATOR IC LIST
3volt inverter
765 floppy disk controller
16x1 mux
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 4 3 8 2 1 6 2 ,4 3 8 2 1 8 2 ,4 3 8 2 3 2 2 ,4 3 8 2 3 6 2 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION Description The ¿¡PD4382162 is a 524,288-word by 16-bit, the ¿¡PD4382182 is a 524,288-word by 18-bit, ¿¡PD4382322 is a
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PD4382162
288-word
16-bit,
PD4382182
18-bit,
PD4382322
144-word
32-bit
PD4382362
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8251a usart interface from z80
Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn
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L4E75BS
80C42H
D043fl23
8251a usart interface from z80
UDL TM 500
f922
verilog code for 8254 timer
l912
256x32
POWER MODULE TM 31
udl 500
78K3
F5S4
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