E256146
Abstract: 200KA LPCC-30 PDBFS220 2A1279 PDBFS500 2A127 NEC 2933 500kcmil Cooper Bussmann lpj
Text: Maximize Short-Circuit Current Rating While Improving Safety UL Listed, Finger-Safe Enclosed Power Distribution Blocks Offer High SCCR New 2008 NEC and UL 508A SCCR marking requirements state that the following equipment must be marked with an assembly SCCR:
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PDBFS204
PDBFS220
PDBFS303
PDBFS330
PDBFS377
PDBFS500
PDBFS504
E256146
200KA
LPCC-30
2A1279
2A127
NEC 2933
500kcmil
Cooper Bussmann lpj
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1443557
Abstract: JGL36250 JJL36250 1432555 1453586 JLL36250 1453552 1433553 1413400 FPB23570CH
Text: 13300 Van Camp Road P.O. Box 468 Bowling Green, OH 43402 Standard Power Distribution Blocks With High Short-Circuit Current Ratings Marathon offers 600 Volt Power Distribution Blocks with high SCCR’s in response to new 2005 NEC and UL508A marking requirements
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UL508A
1443557
JGL36250
JJL36250
1432555
1453586
JLL36250
1453552
1433553
1413400
FPB23570CH
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FCK 111
Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP
Text: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê
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xeh 250 120
Abstract: T108 TC-6056 UUJK
Text: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E
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PWS10
xeh 250 120
T108
TC-6056
UUJK
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code marking tokin
Abstract: code marking NEC LOT CODE NEC tokin AC1000 FB192FRH-A FB192FRP-A FB24FRH-A FB24FRP-A FB24MSP2-A-1
Text: DATA S H E E T Connector FB Series 4-row Type 4-row Metric Connectors for Printed Circuit Board This metric connector is ideal for connecting boards such as those of controllers and communication devices that demand high-performance and high-density characteristics.
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IEC61076-4-104
DE0202
code marking tokin
code marking NEC
LOT CODE NEC
tokin
AC1000
FB192FRH-A
FB192FRP-A
FB24FRH-A
FB24FRP-A
FB24MSP2-A-1
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code marking NEC
Abstract: FB120FRP-A FB240FRP-A FB30FRH-A FB30FRP-A FB60FRH-A FB60FRP-A IEC61076-4-104 AC1000
Text: DATA S H E E T Connector FB Series 5-row Type 5-row Metric Connectors for Printed Circuit Board This metric connector is ideal for connecting boards such as those of controllers and communication devices that demand high-performance and high-density characteristics.
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IEC61076-4-104
DE0202
code marking NEC
FB120FRP-A
FB240FRP-A
FB30FRH-A
FB30FRP-A
FB60FRH-A
FB60FRP-A
AC1000
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marking C1s
Abstract: PC2747 SUPER CAPACITOR BASED CIRCUIT MPC2747TB-E3
Text: PRELIMINARY DATA SHEET_ M F f ~ / BIPOLAR ANALOG INTEGRATED CIRCUITS / //PC2747TB, /¿PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /iPC2747TB, /¿PC2748TB are silicon monolithic integrated circuits designed as amplifier, for mobile
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OCR Scan
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uPC2747TB
uPC2748TB
/iPC2747TB,
PC2748TB
/JPC2747T,
//PC2748T
PC2747TB,
iPC2748TB
marking C1s
PC2747
SUPER CAPACITOR BASED CIRCUIT
MPC2747TB-E3
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NESG220033
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG220033
NESG220033
NESG220033-A
M8E0904E
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transistor NEC D 588
Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
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2SC3356
2SC3356
transistor NEC D 588
IC nec 555
nec d 588
marking 544 low noise amplifier
ZS12
nec 501 t
nec marking 2sc3356
R25 2sc3356
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HBT transistor s parameters measures
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG210833
NESG210833
NESG210833-A
M8E0904E
HBT transistor s parameters measures
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c2792
Abstract: marking C2s UC1676 2791t
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2791TB, juPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The \ i PC2791TB and /¿PC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer am plifier for
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uPC2791TB
uPC2792TB
PC2791TB
PC2792TB
tPC2791TB
2792TB
/PC2791TB
/PC2792TB
PC1675G,
PC1676G
c2792
marking C2s
UC1676
2791t
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R7A marking
Abstract: NESG240033
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG240033
NESG240033
NESG240033-A
M8E0904E
R7A marking
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nec 205b
Abstract: PS7205B-1A PS7205B-1A-E3 PS7205B-1A-E4 PS7205B-1A-F3 PS7205B-1A-F4 nec+205b
Text: DATA SHEET Solid State Relay OCMOS FET PS7205B-1A 4-PIN SOP, 0.9 Ω LOW ON-STATE RESISTANCE 80 V BREAK DOWN VOLTAGE, 500 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET DESCRIPTION The PS7205B-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS
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PS7205B-1A
PS7205B-1A
nec 205b
PS7205B-1A-E3
PS7205B-1A-E4
PS7205B-1A-F3
PS7205B-1A-F4
nec+205b
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marking R33
Abstract: 2SC4227 2SC4227-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4227
2SC4227
S21e2
2SC4227-T1
marking R33
2SC4227-T1
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48-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64300 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT (WORD MODE) Description The µPD23C64300 is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE mode :
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PD23C64300
64M-BIT
16-BIT
PD23C64300
48-pin
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D1713
Abstract: 2SK3749
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 ± 0.1 1.25 ± 0.1 it can be driven by a voltage as low as 2.5 V and it is not
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2SK3749
2SK3749
D1713
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2SC4228
Abstract: 2SC4228-T1 TRANSISTOR R44
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4228
2SC4228
S21e2
2SC4228-T1
2SC4228-T1
TRANSISTOR R44
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37M32
Abstract: marking TE SMD 5pin 5-pin smd Voltage Regulators diode d21 UPC37M
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µ PC37M31,37M32 TWO-OUTPUT POSITIVE VOLTAGE REGULATORS DESCRIPTION The µ PC37M31 and 37M32 are series regulators with two outputs, OUTPUT1: 1 A and OUTPUT2: 0.5 A, built in a single package. OUTPUT1 outputs 3.3 V and OUTPUT2 outputs 1.8 V and 2.5 V. These regulators can be used to
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PC37M31
37M32
37M32
marking TE SMD 5pin
5-pin smd Voltage Regulators
diode d21
UPC37M
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48-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD23C32300 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The μPD23C32300 is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode :
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PD23C32300
32M-BIT
16-BIT
PD23C32300
48-pin
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48-PIN
Abstract: 48-pin TSOP I flash memory marking code p18
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64340, 23C64380 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C64340 and µPD23C64380 are 67,108,864 bits mask-programmable ROM. The word organization is
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PD23C64340,
23C64380
64M-BIT
16-BIT
PD23C64340
PD23C64380
48-pin
48-pin TSOP I flash memory
marking code p18
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TC-1654
Abstract: L33 TRANSISTOR transistor L33 MEI-1202 MF-1134 FN1A4M npn l33
Text: DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Resistors Built-in TYPE 0.4+0.1 –0.05 2.8±0.2 C B 0.65+0.1 –0.15 1.5 • Complementary to FN1A4M
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mmic marking c1b
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2791TB, uPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The ¿iPC2791TB and ¿iPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for
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OCR Scan
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uPC2791TB
uPC2792TB
iPC2791TB
iPC2792TB
iPC1675G,
iPC1676G
mmic marking c1b
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2128TB
PG2128TB
TFL0816-2N7
TFL0816-6N8
TFL0816-8N2
marking g2m
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marking g2p
Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2130TB
PG2130TB
marking g2p
diode gp 429
TFL0816-3N3
TFL0816-6N8
TFL0816-8N2
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