NEC MARKING 2SC3356 Search Results

NEC MARKING 2SC3356 Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

NEC MARKING 2SC3356 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356	PDF
2SC3356 Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.	Original	2SC3356 2SC3356 IC nec 555 transistor 1431 T marking 544 low noise amplifier	PDF
BGT24MTR11 Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586	PDF
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563	PDF
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book	PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 2SC3356-T1B Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2sc3052ef Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor	PDF
Nec K 872 Abstract: 574 nec nec 4312 nec 8681 2sc3356 1685 transistor 2SC5337 2SC5337-T1 a 1232 nec TRANSISTOR 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 500 MHz	Original	2SC5337 2SC3356 2SC5337-T1 Nec K 872 574 nec nec 4312 nec 8681 2sc3356 1685 transistor 2SC5337 2SC5337-T1 a 1232 nec TRANSISTOR 2sc3356	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
2SK2396A Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The	Original	P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor	PDF
nec 2561 Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356 Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to	Original	2SC5337 2SC5337 2SC3356 nec 2561 NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356	PDF

2sc3356 Abstract: 2SC3356-T1B 2SC3356 s2p marking r25 NPN 2SC3356 r25 TRANSISTOR 2sc3356 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	2SC3356 2SC3356-T1B VCB30° PU10209JJ02V0DS L044-435-1588 X044-435-1579 2sc3356 2SC3356-T1B 2SC3356 s2p marking r25 NPN 2SC3356 r25 TRANSISTOR 2sc3356	PDF
MICROPROCESSOR Z80 Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro	PDF
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF
uPC2581 Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8	Original	PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157	PDF
973-120 Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST	Original	NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 973-120 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006	PDF
transistor NEC D 588 Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356 Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.	OCR Scan	2SC3356 2SC3356 transistor NEC D 588 IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356	PDF
GE 2646 Abstract: 2SC3356 r25 CD/GE S 2646 Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.	OCR Scan	2SC3356 2SC3356 S22e-FREQUENCY GE 2646 2SC3356 r25 CD/GE S 2646	PDF
NEC 2561 Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586 Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.	OCR Scan	2SC5337 2SC5337 2SC3356 NEC 2561 NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF

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NEC MARKING 2SC3356 Search Results

NEC MARKING 2SC3356 Result Highlights (5)

NEC MARKING 2SC3356 Datasheets Context Search

2SC3356 s2p

2SC3356 s2p

2SC3356

BGT24MTR11

XM0830SJ

transistor marking T79 ghz

marking code C1E SMD Transistor

2SC3356 s2p

nec mosfet marked v75

2sc3052ef

Nec K 872

UAA 1006

2SK2396A

nec 2561

2sc3356

MICROPROCESSOR Z80

BB 509 varicap diode

BGU7073

uPC2581

973-120

transistor NEC D 588

GE 2646

NEC 2561

SVI 3104 c