NEC J 302 Search Results

2SC2491

Abstract: 2SC319B 2SC748 2sc2550 2SC306 2SC1740 2sc2061 2SC2926 2SC1398 2SC1687
Contextual Info: 84 - S S! tt T y p e No. 2SC 292 « Manuf. = $ SANYO Ü S TOSHIBA t b B NEC ÍL HITACHI Ä ± iï FUJITSU fâ T MATSUSHITA 'J—— 2SC2497 2SC 293 ' J —— 2SC2497A 2SC 294 S S 2 SC2497A 2SC 295 a a S * h m MITSUBISHI □ — A ROHM 2 SC2497A 2SC 296 |_±iS

PD75X

Abstract: 1r30 KRO 6.5 trip KMKP D75328 pD75304GF microcontroller based traffic light control JUPD75316 PD75306 PD75316
Contextual Info: . J/PD75316 Family fiP D75304/306/308/312/316/P308/P316A Single-Chip Microcontrollers With LCD Controller/Driver NEC- N E C E lectronics Inc. June 1994 Description d The ^PD75316 fam ily of high-perform ance 4-bit single chip CMOS m icrocontrollers includes the follow ing

7ROM

Abstract: PD78214 IEU-754 upd 777 607 UPD78214 OP02 uPD78P214 yh77 PD78P214 D78P214
Contextual Info: r NEC i ? 7 s— S 7 • 5 / — h M O S * i* [U S S M O S In te g ra te d C irc u it . f / \ f 7 J ^ 8 li 7 h • v' V J ls -? - 7 7 ° • P ^ 7 D □ 13 V 8 t / 4 > s : £ j f H m i l L T i I ' m ZL-tf' Z «£ 3 7 °P ^ 7 4 ( A 8 L" *y h * v > ^ " ; u ^

NEC J 302

Abstract: 2SJ302 TC-7944 2SJ302-Z MEI-1202 TEA-1035
Contextual Info: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SJ302. 302-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ302 is P-channel M O S Field Effect Transistor designed fo r solenoid, m o to r and lam p driver. FEATURES • Low On-state Resistance

NEC J 302

Abstract: 2SJ302 2SJ302-Z MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SJ302. 302-Z SWITCHING P-CHANNEL POWER MOS FET

2SJ302

Abstract: NEC J 302 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SJ302. 302-Z SWITCHING P-CHANNEL POWER MOS FET

SPECfp92

Abstract: NEC VR4310 uPD30200 uPD30210 U10504E VR4300 VR4300TM VR4305 VR4310 pd30200gd
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR DESCRIPTION The µPD30200-100, 30200-133 VR4300 , 30200-80 (VR4305), and 30210 (VR4310) are high-performance, 64bit RISC (Reduced Instruction Set Computer) type VR SeriesTM microprocessors employing the RISC architecture

VR4300

Abstract: VR4305 VR4310 U10504E PD30210 NEC VR4300 VR4300TM UPD30210GD-167-MBB uPD30200 NEC 4300
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200-100, 30200-133 VR4300 , 30200-80 (VR4305), and 30210 (VR4310) are high-performance, 64bit RISC (Reduced Instruction Set Computer) type VR SeriesTM microprocessors employing the RISC architecture

mips r4000 pin diagram

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT V r4300 , V r4305™, V r4310™ 64-BIT MICROPROCESSOR The ¿¡PD30200-100, 30200-133 V r4300 , 30200-80 (V r4305), and 30210 (V r4310) are high-perform ance, 64bit RISC (Reduced Instruction Set Com puter) type m icroprocessors em ploying the RISC architecture developed by

NEC J 302

Abstract: NEC 2sJ302 T-101-200
Contextual Info: MOS FIELD EFFECT POWER TRANSISTOR 2SJ302, 302-2 SWITCHING P-CHANNEL POWER NIOS FET INDUSTRIAL USE DESCRIPTION T h e 2 S J 3 0 2 is P -c h a n n e l M O S F ie ld E ffe c t T r a n s is to r d e s ig n e d f o r s o le n o id , m o t o r a n d l a m p d r iv e r ,

Contextual Info: NEC 7. ¿¿PD30200, 30210 INSTRUCTION SET The V r4 3 0 0 ’ s in s tru c tio n s co n s is t of 1 w ord 32 bits located on a w ord bou n d a ry. The in s tru c tio n form at has th re e typ e s as show n in Figure 7-1. D ecoding of in s tru c tio n s is sim p lifie d by having only th re e fo rm at typ es.

NEC D30200

Abstract: nec r4300
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD3 0 2 0 0 , 3 0 2 1 0 V r4300 , V r4305™, V r4310™ 64-BIT MICROPROCESSOR The ¿¡PD30200 V r4300 , 30200-133 (V r4305), and 30210 (VR4310)No,e are high-perform ance, 64-bit RISC (Reduced Instruction Set Com puter) type m icroprocessors em ploying the RISC architecture developed by MIPS.

HT12E HT12D

Abstract: 1NA114AP Burr Brown part marking Allen-Bradley micrologix 1000 RS 434-071 PCB Board 1na111ap allen-bradley silicone dashpot fluid hengstler, 890, 1 702 019 1NA131AP ICM72171
Contextual Info: Issued September 2001 302-1000 Data Packs A-K Data Sheet RS data sheet/semiconductor manufacturers data sheet index Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.

D42S18165

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode

uD16312

Abstract: 6312 vfd IC-3307 NEC Vacuum Fluorescent Display
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT //P D 1 6 3 1 2 1/4- to 1/11-DUTY FIP VFD CONTROLLER/DRIVER The //PD16312 is a FIP (fluorescent Indicator Panel, or Vacuum Fluorescent Display) controller/driver that is driven on a 1/4- to 1/11 duty factor. It consists of 11 segment output lines, 6 grid output lines, 5 segment/grid output

Contextual Info: DATA SHEET NEC/ MOS INTEGRATED CIRCUIT _ /iiPD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The ¿¿PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2 , 1,048,576 x 8 x 2 and 524,288 x 1 6 x 2 word x bit x bank ,

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P P 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The jjPD42St6405L, 4216405L are 4,194,304 words by 4 bits CMOS dynamic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

D481850

Abstract: NEC D481850 D481
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT 481850 ¿ ÎP D 8M-bit Synchronous GRAM Description The ¿¿PD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function

Contextual Info: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

uPD30200 VR4300

Abstract: VR4300 UPD30200GD-100 bc 107 common base h parameters capacitor CTC1 U10504E VR4300TM VR4305 VR4310 UPD30210GD-167-MBB
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200 VR4300 , 30200-133 (VR4305), and 30210 (VR4310)Note are high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by MIPS.

d4218160

Abstract: H1311 4218160LG 5-A70
Contextual Info: NEC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ mPD42S16160L, 4216160L, 42S18160L, 421816QL 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The MPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

FZH 191

Abstract: SRF 3733 lzl 24h fzh 111 SRF 7068 TYA 0298 FZH 161 LOGIC CIRCUIT FZH 165 FZH 261 FZH 171
Contextual Info: r M O S I M Ä 0 S& M O S In tegrated C ircu it « PLL •a > ^q- 1 7 6 8 t IDC PLL > >-tz+f-< + f £ r t / & V' • - 7 1 ? azi > h a - ÿ V T o 4 t'7 h • C P U « , 4 t í -y h M5iJAfli:, f f i l f t * . « » ( B t T - y b • T Z b. * -V U - • 7 7 ^ t 7

NEC 4218165-60

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / / ¿ P D 4 2 S 18 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S18165, 4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~