K6X0808C1D-BF55
Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI
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CY7C128A-15VC
CY7C128A-15SC
CY7C167A-15PC
CY7C168A-15PC
24PIN
20PIN
300MIL
K6X0808C1D-BF55
HY6264P
AS6C1008-55SIN
samsung p28
K6R4016V1D-UC10
as6c4008-55sin
HYNIX
IS61LV25616AL-10KLI
GS71116AGP-10
uPD431000ACZ-70L
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uPD43256
Abstract: PD43256BCZ-xxLL PD43256B
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The μPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
PD43256B
28-pin
uPD43256
PD43256BCZ-xxLL
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UPD43256BGU-70LL-A
Abstract: upd43256bgw-70ll-9jl-a uPD43256BCZ-70LL UPD43256BGU-70L uPD43256BGU-70LL
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
PD43256B
28-pin
UPD43256BGU-70LL-A
upd43256bgw-70ll-9jl-a
uPD43256BCZ-70LL
UPD43256BGU-70L
uPD43256BGU-70LL
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The μPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
PD43256B
28-pin
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D43256B
Abstract: D43256 uPD43256 uPD43256BCZ-70LL PD43256B uPD43256BGU-xxL UPD43256BCZ uPD43256B-A10
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
PD43256B
28-pin
D43256B
D43256
uPD43256
uPD43256BCZ-70LL
uPD43256BGU-xxL
UPD43256BCZ
uPD43256B-A10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The μPD43257B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And the μPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD43257B
256K-BIT
32K-WORD
PD43257B
28-pin
PD43257B-xxLL
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43257B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And the µPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD43257B
256K-BIT
32K-WORD
PD43257B
28-pin
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S24C MARK
Abstract: tsop 3602 9020 8-pin SOP SIP 400B nec 1251 P100G thomson 462 t P5VP-340B3-2 J 80222 P28D-100-600A1-1
Text: Packages Plastic DIP Dual In-line Package Units in mm 8-pin plastic DIP (300mil) 8 5 1 4 14-pin plastic DIP with TAB (300mil) 14 8 1 7 20.32 MAX. 7.62 10.16 MAX. 24.60 MAX. 7.62 4.31 MAX. 6.4 0.9 MIN. 6.4 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 0.51 MIN. 2.54
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300mil)
14-pin
P8C-100-300B,
P14CT-100-300B-1
X10679EJCV0SG00
S24C MARK
tsop 3602
9020 8-pin SOP
SIP 400B
nec 1251
P100G
thomson 462 t
P5VP-340B3-2
J 80222
P28D-100-600A1-1
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d43257
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43257B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And the µPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.
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PD43257B
256K-BIT
32K-WORD
PD43257B
28-pin
PD43257B-xce
d43257
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D7503AGF
Abstract: D70108C D70320L d77c20ac D78C10 D70116C D75306GF D77C25C D70208L D70216
Text: NEC ELECTRONICS INC. MAY 1999 TRQ-99-05-323 QUARTERLY MICROPROCESSOR/MICROCOMPUTER RELIABILITY REPORT This report contains reliability data on microprocessor and microcomputer devices fabricated at NEC Roseville and assembled at NEC Roseville or NEC Singapore.
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TRQ-99-05-323
PD70216
68-pin
PD70335
84-pin
D7503AGF
D70108C
D70320L
d77c20ac
D78C10
D70116C
D75306GF
D77C25C
D70208L
D70216
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uPD43256
Abstract: d43256 UPD43256BCZ-85LL D43256B PD43256B uPD43256BGU-xxL upd43256bgu-70l UPD43256BCZ-70LL uPD43256B-A10
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available. And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
PD43256B
28-pin
uPD43256
d43256
UPD43256BCZ-85LL
D43256B
uPD43256BGU-xxL
upd43256bgu-70l
UPD43256BCZ-70LL
uPD43256B-A10
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NEC 28PIN DIP
Abstract: MD400 ANTISTATIC MD400-03A
Text: TUBE CONTAINER Unit : mm 8.0 13.5 12.5 7.0 17.9 MD400-03A Length : 500 ± 2.0 Thickness : 0.5+0.2 −0.1 Tolerance : ± 0.4 Material : Plastic with antistatic finish Applied Package Quantity (pcs) 20-pin plastic DIP MAX. 17 22-pin plastic DIP/ceramic DIP
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MD400-03A
20-pin
22-pin
28-pin
30-pin
SSD-A-H5361-1
NEC 28PIN DIP
MD400
ANTISTATIC
MD400-03A
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NEC 20PIN DIP
Abstract: NEC 28PIN DIP MD400 NEC 24PIN DIP SSD-A-H6525-1 cerdip MD400-05A
Text: TUBE CONTAINER UNIT : mm 7.5 13.5 12.5 7.0 17.9 MD400-05A length : 495±2.0 +0.2 thickness : 0.5−0.1 tolerance : ±0.4 material : plastic with antistatic finish Applied Package Quantity (pcs) 14-pin • Plastic DIP MAX. 24 20-pin · Plastic DIP MAX. 17
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MD400-05A
14-pin
20-pin
22-pin
24-pin
28-pin
30-pin
SSD-A-H6525-1
NEC 20PIN DIP
NEC 28PIN DIP
MD400
NEC 24PIN DIP
SSD-A-H6525-1
cerdip
MD400-05A
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812 tube
Abstract: dip 135 dip 28 dimension MD400-03A
Text: TUBE PACKING 1. CONTAINER Pin stopper tion irec d pin 1 2. INNER BOX L H W Label LABEL PRODUCT NAME, QUANTITY, LOT NUMBER, CLASS CONTAINER INNER BOX Quantity pcs /tube Dimension (mm) (WxH×L) Quantity (pcs) /box 20-pin plastic DIP MAX. 17 163×135×532
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20-pin
22-pin
28-pin
30-pin
MD400-03AL
812 tube
dip 135
dip 28 dimension
MD400-03A
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Untitled
Abstract: No abstract text available
Text: NEC ¿{PD77C25, 77P25 1. PIN FUNCTIONS 1.1 Pin Functions for Normal Operation Pin Pin N um ber Designation I/O Function 28-pin Plastic DIP, 32-pin Plastic SO P 44-pin Plastic QFJ 28-pin Ceramic DIP 28 V dd GND 14 V p p Note 1 31 1 32 44 15 21 16 22 2 2 —
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28-pin
32-pin
44-pin
uPD77C25
uPD77P25
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UPD77C25GW
Abstract: No abstract text available
Text: NEC ¿{PD77C25, 77P25 ★ O RDERING INFO RM ATIO N Part Number Package /xPD77C25C-xxx 28-pin plastic DIP 600 mil /jPD77C25GW-xxx 32-pin plastic SOP (525 mil) /¿ P D 7 7 C 2 5 L -X X X 4-4—pin plastic QFJ (650 x 650 mil) /¿PD77P25C 28-pin plastic DIP (600 mil)
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uPD77C25C-xxx
uPD77C25GW-xxx
PD77C25,
77P25
28-pin
32-pin
44-pin
UPD77C25GW
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D43256BGU
Abstract: d43256bc nec 28 pin 43256B 43256BG 43256BGU
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ //PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The /iPD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.
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uPD43256B
256K-BIT
32K-WORD
/iPD43256B
28-pin
150ns
C10535E)
D43256BGU
d43256bc
nec 28 pin
43256B
43256BG
43256BGU
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Untitled
Abstract: No abstract text available
Text: SEC fiPD43256B 32,768 x 8-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The ^fPD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to
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fiPD43256B
fPD43256B
768-word
/JPD43256B
28-Pin
iPD43256B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _//PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The ¿¿PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits C M OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.
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43256B
256K-BIT
32K-WORD
PD43256B
43256B
28-pin
PD43256BGU:
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Untitled
Abstract: No abstract text available
Text: NEC pPD4368 8,192 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /JPD4368 is a high-speed 8,192-word by 8-bit static RAM designed with CMOS peripheral circuits and N-channel memory cells with polysilicon resistors. Two chip enable pins are provided for battery backup appli
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pPD4368
/JPD4368
192-word
28-Pin
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Untitled
Abstract: No abstract text available
Text: jiPD4369 8,192 X 9-Bit Static CMOS RAM W JL J W NEC Electronics Inc. Description Pin Configuration The /JPD4369 is a high-speed 8,192-word by 9-bit static RAM fabricated with CMOS peripheral circuits and N-channel memory cells with poly silicon resistors. Two
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uPD4369
/JPD4369
192-word
jPD4369
28-pin
D4369
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43256BCZ
Abstract: MPD43256BGU-85L NEC 28PIN DIP 7L Marking
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ /¿PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The /1PD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CM OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.
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uPD43256B
256K-BIT
32K-WORD
/1PD43256B
jiPD43256B
28-pin
32-pin
PP43256B
HPD43256B
43256BCZ
MPD43256BGU-85L
NEC 28PIN DIP
7L Marking
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Untitled
Abstract: No abstract text available
Text: DATA SHEET ^ I E C _¿¿PD43256B / M OS IN T E G R A T E D C IR C U IT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The itPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
itPD43256B
iPD43256B
28-pin
32-pin
----I/03
/JPD43256BGW-9KL
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UPD4368
Abstract: No abstract text available
Text: NEC PPD4368 8,192 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /JPD4368 is a high-speed 8,192-word by 8-bit static RAM designed with CMOS peripheral circuits and N-channel memory cells with polysilicon resistors. Two chip enable pins are provided for battery backup appli
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uPD4368
/JPD4368
192-word
jl/PD4368
28-pin
JIPD4368
63IH-6569B
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