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    ne666

    Abstract: NEC NE85635 2SC33 NE85600 epitaxial micro-x 2sc4226 ka13 NE AND micro-X 2SC5011 NE856
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANOWIOTH PRODUCT: fT a 7 Q H l • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 3 5 M IC R O -X CO (C H IP )


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    NE856 NE856C0 NE85635 20CTC NE85633 NE86635 NE8S632 ne666 NEC NE85635 2SC33 NE85600 epitaxial micro-x 2sc4226 ka13 NE AND micro-X 2SC5011 PDF