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    NE87112 Search Results

    NE87112 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE87112 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    NE87112 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1222L

    Abstract: NE871 ne87112
    Text: NPN SILICON MICROWAVE TRAN SISTO R NE87112 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr = 2 GHz • LOW N O ISE FIGURE: N F = 1.5 dB at 70 MHz • HIGH BR EAK D O W N VOLTAGE: V cbo = 4 5 V DESCRIPTION The NE87112 N PN Silicon Transistor is designed for low-noise


    OCR Scan     		NE87112 NE87112 -25-c 2SCI260 -1222L 1222L NE871 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 PDF