NE76184AS
Abstract: x-band power transistor NE76184A-SL NE76184A-TI
Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 24 • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
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NE76184AS
NE76184AS
NE76184A-TI
NE76184A-SL
24-Hour
x-band power transistor
NE76184A-SL
NE76184A-TI
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transistor NEC D 587
Abstract: NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A 149-8 MAG
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TC-2303
Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
TC-2303
NEC 3377
transistor NEC D 582
transistor NEC D 587
NE76184A-SL
NE76184A-T1
NE76184A-T1A
p1085
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SG 2368
Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SG 2368
LS 2027 audio amp
c 2688 nec
LS 2027 amp
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ne76184a
Abstract: No abstract text available
Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Id s = 10 m A L O W N O IS E F IG U R E : 0.8 dB typical at 4 GHz 24 H IG H A S S O C IA T E D G A IN : 21 12 dB typical at 4 GHz 18 L g = 1.0 tu n , W g = 4 0 0 jim
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NE76184A
NE76184A
S12S21|
0QL5522
NE76184AS
NE76184A-TI
NE76184A-SL
b427525
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76184a
Abstract: NE76184A/CEL
Text: GENERAL PURPOSE LTO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s= 3 V, Ids= 10 mA FEATURES LOW NOISE FIGURE: 0.8 dB typical at 4 GHz HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz CD ~D o z U_ L g = 1.0 jim , Wg = 4 0 0 jim
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NE76184A
NE76184A
IS12S21I
NE76184AS
E76184A-TI
E76184A-SL
76184a
NE76184A/CEL
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NE76184A at 5 GHz
Abstract: NE76184A
Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE: 24 0.8 dB typical at 4 GHz a> T} HIGH ASSOCIATED GAIN: 21 12 dB typical at 4 GHz 18 \£ 2 Lo s 1.0 im, Wo = 400
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NE76184A
NE76184A
S12S21|
NE76184A-SL.
NE76184A at 5 GHz
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