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    x band GaAs MESFET 261

    Abstract: No abstract text available
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES_ • Units in mm HIGH POWER GAIN: PACKAGE OUTLINE S01 HIGH OUTPUT POWER: • Lg = 0.8 nm, W g = 330 nm • OUTLINE DIMENSIONS 7 dB TYP at 12 GHz • • NE72is o i 15 dBm TYP at 12 GHz


    OCR Scan     		NE72is NE721S01 1e-14 6e-12 18e-12 1e-10 7e-12 055e-12 36e-10 x band GaAs MESFET 261 PDF