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NE68718A Abstract: ne68718 Text: NPN SILICON RF TRANSISTOR NE68718 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	NE68718 NE68718-A NE68718-T1-A NE68718A ne68718	PDF

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NE68718A

Abstract: ne68718
Text: NPN SILICON RF TRANSISTOR NE68718 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

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NE68718 NE68718-A NE68718-T1-A NE68718A ne68718

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