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California Eastern Laboratories (CEL) NE651R479A-A RF MOSFET GAAS HJ-FET 3.5V 79A
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DigiKey	NE651R479A-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE651R479A-T1-A RF MOSFET GAAS HJ-FET 3.5V 79A
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DigiKey	NE651R479A-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC NE651R479A-T1-A RF MOSFET HFET 3.5V 79A
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DigiKey	NE651R479A-T1-A	Bulk			38	1 - 10 - 100 $7.95 1000 $7.95 10000 $7.95	Buy Now
California Eastern Laboratories (CEL) NE651R479A-EVPW19 EVAL BOARD NE651R479A 1.9GHZ
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DigiKey	NE651R479A-EVPW19	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation NE651R479A-T1-A NE651R479 - N-Channel 8V 1A GaAs HFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	NE651R479A-T1-A		4,840		1	1 $7.64 10 $7.64 100 $7.18 1000 $6.49 10000 $6.49	Buy Now

NE651R479A Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
NE651R479A	NEC	1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET	Original	PDF
NE651R479A	NEC	Semiconductor Selection Guide	Original	PDF
NE651R479A	NEC	0.4 W L-BAND POWER GaAs HJ-FET	Original	PDF
NE651R479A-A	California Eastern Laboratories	MEDIUM POWER GaAs HJ-FET	Original	PDF
NE651R479A-EVPW19	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE651R479A 1.9GHZ	Original	PDF
NE651R479A-EVPW24	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE651R479A 2.4GHZ	Original	PDF
NE651R479A-EVPW35	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE651R479A 3.5GHZ	Original	PDF
NE651R479A-T1	NEC	0.4 W L-Band Power GaAs HJ-FET	Original	PDF
NE651R479A-T1	NEC	0.4 W L-BAND POWER GaAs HJ-FET	Original	PDF
NE651R479A-T1-A	California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, HJ-FET GAAS 1.9GHZ 1W 79A	Original	PDF
NE651R479A-T1-A	NEC	TRANS JFET N-CH 8V 350MA REEL	Original	PDF
NE651R479A-T1-AZ	NEC	FET Transistor: 0.4W L-BAND POWER GaAs HJ-FET: Tape And Reel	Original	PDF

NE651R479A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
max 16801 pspice Abstract: 40J100 Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour max 16801 pspice 40J100	PDF
6822 FET Abstract: No abstract text available Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour 6822 FET	PDF
nec k 4145 Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1 Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear	Original	NE651R479A NE651R479A NE6510179A NE6510379A. nec k 4145 NE6510379A NE651R479A-T1	PDF
100A5R1CP150X Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084 Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	NE651R479A IMT-2000, NE651R479A 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A ATC 1084	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear	Original	NE651R479A NE651R479A NE6510179A NE6510379A.	PDF
NE6510179A Abstract: NE6510379A NE651R479A NE651R479A-T1 Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high	Original	NE651R479A NE651R479A NE6510179A NE6510379A. NE6510379A NE651R479A-T1	PDF
NE6510179A Abstract: NE650103M NE651R479A Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7	Original	NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A	PDF
Untitled Abstract: No abstract text available Text: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm	Original	NE651R479A IR35-00-2 24-Hour	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA,	Original	NE651R479A NE651R479A 24-Hour	PDF
k 2134 nec Abstract: NEC k 2134 Text: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm	Original	NE651R479A IR35-00-2 24-Hour k 2134 nec NEC k 2134	PDF
NEC k 2134 Abstract: No abstract text available Text: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm	Original	NE651R479A IR35-00-2 24-Hour NEC k 2134	PDF
ATC 1084 Abstract: GRM40C0G 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	NE651R479A IMT-2000, NE651R479A ATC 1084 GRM40C0G 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A	PDF
Untitled Abstract: No abstract text available Text: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS	Original	NE651R479A IMT-2000, NE651R479A IR35-00-2 24-Hour	PDF
IC 3140 Abstract: transistor NEC D 882 p ATC 1084 nec d 882 p 901 704 16 08 55 nec d 882 p datasheet 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-T1 Text: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS	Original	NE651R479A IMT-2000, NE651R479A IR35-00-2 24-Hour IC 3140 transistor NEC D 882 p ATC 1084 nec d 882 p 901 704 16 08 55 nec d 882 p datasheet 100A5R1CP150X IMT-2000 NE651R479A-T1	PDF

NE6510179A Abstract: NE6510379A NE651R479A NE651R479A-T1 Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear	Original	NE651R479A NE651R479A NE6510179A NE6510379A. NE6510379A NE651R479A-T1	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE651R479A DRAIN SCHEMATIC Ldpkg L=0.001 nH Ld L=0.55 nH GATE Lspkg L=0.001 nH Q1 Cdspkg C=0.1 pF Lg L=1.45 nH Cdspkg C=0.1 pF Lspkg L=0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 1.0 VTO 0.9255 RG VTOSC RD 0.2	Original	NE651R479A 1e-16 30e-12 2e-12 100e-12 14e-12 1e-12	PDF
IC 3140 Abstract: 6822 FET NEC k 2134 ic atc 1084 Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,	Original	NE651R479A IMT-2000, NE651R479A IMT-20equency: IC 3140 6822 FET NEC k 2134 ic atc 1084	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943	PDF
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408	PDF
x 1535 ce Abstract: 0537 Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high	OCR Scan	NE651R479A NE6510179A NE6510379A. x 1535 ce 0537	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high	OCR Scan	NE651R479A NE651R479A NE6510179A NE6510379A. R479A	PDF

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NE651R479A Search Results

NE651R479A Price and Stock

California Eastern Laboratories (CEL) NE651R479A-A

California Eastern Laboratories (CEL) NE651R479A-T1-A

Rochester Electronics LLC NE651R479A-T1-A

California Eastern Laboratories (CEL) NE651R479A-EVPW19

Renesas Electronics Corporation NE651R479A-T1-A

NE651R479A Datasheets (12)

NE651R479A Datasheets Context Search

max 16801 pspice

6822 FET

nec k 4145

100A5R1CP150X

Untitled

NE6510179A

NE6510179A

Untitled

Untitled

k 2134 nec

NEC k 2134

ATC 1084

Untitled

IC 3140

NE6510179A

Untitled

IC 3140

FET marking code g5d

nec mosfet marked v75

2SK2396

uPD16305

nf025

x 1535 ce

Untitled