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    California Eastern Laboratories (CEL) NE650103M-A

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    NE650103M Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE650103M California Eastern Laboratories 10 W L & S-BAND POWER GaAs MESFET Original PDF
    NE650103M California Eastern Laboratories NECS 10 W L & S-BAND POWER GaAs MESFET Original PDF
    NE650103M NEC 10 W L, S-BAND POWER GaAs MES FET Original PDF
    NE650103M-A California Eastern Laboratories 10 W L & S-BAND POWER GaAs MESFET Original PDF
    NE650103M-AZ NEC IC FET MISC 3(3M) Original PDF

    NE650103M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE6510179A

    Abstract: NE650103M NE651R479A
    Text: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7


    Original     		PDF NE651R479A NE6510179A NE650103M NE6510179A NE650103M NE651R479A

    NE650103M

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and


    Original     		PDF NE650103M NE650103M T-91M)

    NE650103M

    Abstract: NE650103M-A
    Text: DATA SHEET N-CHANNEL GaAs MES FET NE650103M 10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power CW with high linear gain, high efficiency and


    Original     		PDF NE650103M NE650103M NE650103M-A T-91M) NE650103M-A

    NE650103M

    Abstract: NE650103M-A 68207 j349
    Text: NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC PACKAGE PACKAGE OUTLINE 3M • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA 20.32 ± 0.15 • HIGH OUTPUT POWER: 40 dBm TYP 14.27 ± 0.15


    Original     		PDF NE650103M NE650103M NE650103M-A 68207 j349

    transistor NEC D 587

    Abstract: 17-33 0952 567 tone NE650103M 68207
    Text: NEC'S 10 W L & S-BAND NE650103M POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC PACKAGE PACKAGE OUTLINE 3M • USABLE TO 2.7 GHz: PCS, W-CDMA, WLL, Satellite Uplink, BWA 20.32 ± 0.15 • HIGH OUTPUT POWER: 40 dBm TYP 14.27 ± 0.15


    Original     		PDF NE650103M transistor NEC D 587 17-33 0952 567 tone NE650103M 68207

    NE650103M

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L