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    NE3511S02 Price and Stock

    California Eastern Laboratories (CEL) NE3511S02-A

    RF MOSFET GAAS HJ-FET 2V S02
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    DigiKey NE3511S02-A Bulk
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    California Eastern Laboratories (CEL) NE3511S02-T1C-A

    RF MOSFET GAAS HJ-FET 2V S02
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    DigiKey NE3511S02-T1C-A Digi-Reel 1
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    NE3511S02-T1C-A Reel
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    Panasonic Electronic Components NE3511S02-A

    KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET
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    Quest Components NE3511S02-A 17
    • 1 $7.5
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    NE3511S02 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE3511S02 California Eastern Laboratories X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE3511S02-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, HJ-FET NCH 13.5DB S02 Original PDF
    NE3511S02-T1C California Eastern Laboratories X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE3511S02-T1C-A California Eastern Laboratories X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE3511S02-T1D California Eastern Laboratories X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF

    NE3511S02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ne3511s02 s2p

    Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880

    ne3511s02 s2p

    Abstract: NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02-A NE3511S02 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D lnb ku-band nec microwave NE35

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFECT TRANSISTOR NE3511S02 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES - Super Low Noise Figure & High Associated Gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @f = 12 GHz - New Hollow Mold S02 Package (Pb-Free T.)


    Original     		PDF NE3511S02 NE3511S02-T1 NE3511S02-T1B NE3511S02-T1-A NE3511S02-T1B-A NE3511S0or

    m04 SMD

    Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
    Text: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /


    Original     		PDF NE27200 NE321000 NE3210S01 NE4210S01 NE3503M04 NE3508M04 m04 SMD nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    ne3511s02 s2p

    Abstract: NE3511S02 gaas fet micro-X Package RT DUROID 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D rt duroid s-parameter
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L