08l01
Abstract: 24l01
Text: SJD12A C XXL01 SERIES DESCRIPTION The SJD12A(C)XXL01 series is designed to protect voltage sensitive components from high voltage,high energy transients.Excellent clamping capability, high surge capability, low zener impedance and fast response time.Because of its small size,it is ideal for use in cellular phones,portable
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SJD12A
XXL01
IEC61000-4-2
OD-123S
06-Jun-12
OD-123S
08l01
24l01
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ATA13
Abstract: No abstract text available
Text: HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT7026S/L Integrateci Device Technology, Inc FEATURES: multiplexed bus com patibility IDT7026 easily expands data bus width to 32 bits or m ore using the M aster/S lave select w hen cascading m ore than o ne d e vice
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IDT7026S/L
35/45/55/70ns
25/35/45/55ns
IDT7026S
IDT7026L
IDT7026
IDT7026S/L
IL-STD-883,
84-pin
G84-3)
ATA13
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ne 06l
Abstract: No abstract text available
Text: STD16NE06L N - CHANNEL 60V - 0.07 £2 - 16A - DPAK _STripFET " POWER MOSFET PRELIMINARY DATA TYPE S TD 16N E 06L V dss R dS oii Id 60 V < 0.085 Q. 16 A • . . . . TYPICAL R D S ( o n ) = 0.07 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C
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STD16NE06L
O-252
0068772-B
ne 06l
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Untitled
Abstract: No abstract text available
Text: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q
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0D4L50L4
STP50N06L
STP50N06LFI
STP50N
06LFI
QCmb510
STP50N06L/FI
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HVR3509
Abstract: kbp 3510 DF101 3505G P6KE 6CA GENERAL SEMICONDUCTOR CK 6CA SMd 6CA smd diodes ke 48 model PB201M smd 8ca
Text: iiA irr PRODUCT PACKAGING SPECIFICATIONS AMMOPAK PACKAGING FOR TRANSISTORS TO-92 PLASTIC CASE Carrier tape Specification of carrier tape T h e c a rrie r tap e c o n s is ts of a c a r d b oard strip with s p ro c k e t holes. The p ins of th e tr a n s is to rs are s e c u re d
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KBL005,
KBL01,
RS401S-RS407S
RS501S-RS507S.
KBP005G
KBP10G,
KBP2005G
KBP210G,
E95060A
D1I/0118310
HVR3509
kbp 3510
DF101
3505G
P6KE 6CA
GENERAL SEMICONDUCTOR CK 6CA
SMd 6CA
smd diodes ke 48 model
PB201M
smd 8ca
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Untitled
Abstract: No abstract text available
Text: fax id: 5204 CY7C138 CY7C139 CYPRESS 4K x 8/9 Dual-Port Static RAM Features T ru e D u al-P o rted m em o ry ce lls w h ich allow sim u lta n e o u s read s o f th e sa m e m e m o ry location 4 K x 8 o rg an iza tio n C Y 7 C 1 3 8 4 K x 9 o rg an iza tio n (C Y 7 C 1 3 9 )
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CY7C006
Abstract: CY7C016
Text: fax id: 5207 ,.V.Ï.Ï.V.^ y nr' CY7C006 CY7C016 Æ C Y P R E S S 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow s im u ltan eo u s read s o f th e s a m e m e m o ry location 16K x 8 o rg an iza tio n C Y 7 C 00 6
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CY7C006)
CY7C016)
65-micron
68-pin
64-pin
7C006)
80-pin
7C016
CY7C006
CY7C016
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70914S
Abstract: No abstract text available
Text: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM Integrated Device Technology, Inc. FEATURES: • H igh-speed clock-to-data output tim es — M ilitary: 20/25ns (max.) — C om m ercial: 12/15/20ns (max.) • Low -power operation — IDT70914S Active: 800 mW (typ.)
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20/25ns
12/15/20ns
IDT70914S
MIL-STD-883,
68-pin
J68-1)
G68-1
80-pin
70914S
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mc 741
Abstract: BBO-320-1000P-9113-C
Text: O í l T M H e C K M e 6 e c K O H T a K T H b ie Ü O M e H K B b iic n io H a T e jik i J i a i y p a H a n p ^ D K e H iie m n a p a M e T p b i n u T a m is i nocTosiHHoro TOKa I o m o p| C x e M b l n O flK / lK D H e H M fl C H G T b ip b M Ç l Bbl 3 0 ,0 ,3 M M
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06miie
flnana30H
10-30B
B03fleiÃ
BBO-320-400P-9123-C
BBO-320-600P-9100-H
BBO-320-600P-9113-C
BBO-320-600P-9123-C
BBO-320-800P-9100-H
mc 741
BBO-320-1000P-9113-C
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Z952
Abstract: c144 1S84 C144 e 5v CY7C144 CY7C145 IDT7005
Text: fax id: 5205 ,.V.Ï.Ï.V.^ y nr' C Y 7C 145 Æ C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4
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CY7C144)
CY7C145)
65-micron
68-pin
64-pin
80-pin
Z952
c144
1S84
C144 e 5v
CY7C144
CY7C145
IDT7005
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c1449
Abstract: C144 ESS CY7C144 CY7C145 IDT7005 1BHC
Text: fax id: 5205 ,.V.V.V.V.^ !!rnr' C Y 7C 145 C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4
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CY7C145
CY7C144
CY7C144)
CY7C145)
65-micron
68-pin
64-pin
80-pin
IDT7005/IDT7015
c1449
C144 ESS
IDT7005
1BHC
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2T908A
Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,
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T-0574D.
30Eiaa
Coi03nojiH
2T908A
2T602
2T907A
KT604
1HT251
1T813
2t903
KT920A
PO6 115.05
KT117
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cy7c131-55nc
Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex
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CY7C130/CY7C131
CY7C140/CY7C141
CY7C140/
CY7C141
CY7C130/
CY7C131;
IDT7130
IDT7140
cy7c131-55nc
ZT12
CY7C130
CY7C131
CY7C140
CY7C141
IDT7140
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Zl13
Abstract: ZL12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1308 wj 75
Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex
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CY7C130/CY7C131
CY7C140/CY7C141
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7C140/CY7C141
IDT7130
IDT7140
Zl13
ZL12
CY7C130
CY7C131
CY7C140
CY7C141
C1308
wj 75
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed clock-to-data output times — Military: 20/25ns (max.) — Commercial: 15/20/25ns (max.) • Low-power operation
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IDT70914S
20/25ns
15/20/25ns
IDT70914S
STD-883,
68-pin
J68-1)
G68-1)
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23N05
Abstract: stk 0055 23n06 23N05L
Text: 7 ^ 2 ^ 2 3 7 O O M b lB f l S 12 • S G T H STK23N05L STK23N06L SGS-THOMSON *5 7 RÆQ i©[EL[MM©[KS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N 05L STK23N06L . . . . . . ■ . . V dss RDS on Id 50 V 60 V
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STK23N05L
STK23N06L
STK23N
OT-82
OT-194
TK23N05L
TK23N06L
0S970
7T2R237
23N05
stk 0055
23n06
23N05L
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CLC411A
Abstract: No abstract text available
Text: CLC411 c Comlinear Corporation High-Speed Video Op Amp with Disable APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • HDTV amplifier video line driver high-speed analog bus driver video signal multiplexer DAC output buffer
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CLC411
CLC411
200MHz
300V/ns
CLC411A
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: * True Dual-Ported memory cells which allow simultaneous reads of the same memory location * High-speed access * - Military:20125135ns max. - Commercial: 12/15/17120125135ns (max.) Low-power operation - IDT7015S
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20125135ns
12/15/17120125135ns
IDT7015S
750mW
IDT70151Active:
IDT7015
IDT7015S/L
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026R
Abstract: M0192 LSE 019L
Text: CY7C056V CY7C057V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM E xp a n d ab le d ata bus to 72 b its o r m ore u sing M a s te r/S la v e C hip S ele ct w hen using m o re th an o n e d evice Features • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta
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CY7C056V
CY7C057V
16K/32K
FLEx36TM
026R
M0192
LSE 019L
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Untitled
Abstract: No abstract text available
Text: HIG H -S P E E D 8K x 9 D U A L - P O R T IDT701 5S/L STATIC RAM FEATURES: • True Dual-Ported memory cells which allow simulta neous reads ot the same memory location • High-speed access — Military: 20/25/35ns max. — Commercial: 12/15/17/20/25/35ns (max.)
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IDT701
20/25/35ns
12/15/17/20/25/35ns
IDT7015S
750mW
IDT7015L
IDT7015
MIL-STD-883,
80-pin
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400S
Abstract: ttl register file
Text: m IQUAL IK ICA I IONI' RE Q UI RE M E NT S I I REM OV ED I SUPERStU1HG" MIL-M-38510/18(USAF 4 S e p t em be r 1975 M I L IT A RY S P E C I F I CA T IO N M IC R O C I R C U I T S , DIGITAL, TTL, RE GI S TE R FILE, M O NO L I T H I C SILICON INACTIVE FOR NEW DESIGN AFTER DATE OT THIS R E V I S I O n |
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MIL-M-38510/18
MIL-M-38510,
400S
ttl register file
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Untitled
Abstract: No abstract text available
Text: \y HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM IDT7007S/L Integrated Devi ce Technology, Inc. FEATURES: more using the Master/Slave select when cascading more than one device M/S = H for BUSY output flag on Master, M/S = L for BUSY input on Slave Interrupt Flag
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IDT7007S/L
68-pin
64-pin
MIL-STD-883,
80-pin
PN80-1)
68-pln
G68-1)
J68-1)
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Untitled
Abstract: No abstract text available
Text: CY7B138 CY7B139 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per formance T h e CY7B138 an d CY 7B139 are high speed B iC M O S 4K x 8 an d 4K x 9 dualp o rt static RA M s. V arious a rb itration
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CY7B138
CY7B139
CY7B138
7B139
CY7B138/9
7B138/9
16/18-bit
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 8K x 9 DUAL-PORT IDT7015S/L STATIC RAM I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta neous reads of the sam e m em ory location • H igh-speed access — M ilitary: 20/25/35ns max.
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IDT7015S/L
20/25/35ns
12/15/17/20/25/35ns
IDT7015S
IDT7015L
IDT7015
MIL-STD-883,
80-pin
PN80-1)
68-pin
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