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    NDS352 Price and Stock

    onsemi NDS352AP

    MOSFET P-CH 30V 900MA SUPERSOT3
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    DigiKey NDS352AP Digi-Reel 11,924 1
    • 1 $0.7
    • 10 $0.435
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    NDS352AP Cut Tape 11,924 1
    • 1 $0.7
    • 10 $0.435
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    NDS352AP Reel 11,800 3,000
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    Avnet Americas NDS352AP Reel 8 Weeks 3,000
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    NDS352AP Reel 8 Weeks 6,000
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    NDS352AP Reel 8 Weeks 6,000
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    Mouser Electronics NDS352AP 38,984
    • 1 $0.58
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    • 100 $0.254
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    Newark NDS352AP Reel 6,000 3,000
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    NDS352AP Cut Tape 136 1
    • 1 $0.112
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    NDS352AP Reel 6,000
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    Onlinecomponents.com NDS352AP 6,000
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    Bristol Electronics NDS352AP 7,224
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    NDS352AP 259
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    Quest Components NDS352AP 4,332
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    Rochester Electronics NDS352AP 5,888 1
    • 1 $0.136
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    • 1000 $0.1156
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    TME NDS352AP 1,265 1
    • 1 $0.459
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    • 1000 $0.163
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    Richardson RFPD NDS352AP 6,000
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    Avnet Asia NDS352AP 8 Weeks 9,000
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    Avnet Silica NDS352AP 9 Weeks 3,000
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    EBV Elektronik NDS352AP 9,000 10 Weeks 3,000
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    Master Electronics NDS352AP 6,000
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    New Advantage Corporation NDS352AP 6,000 1
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    Rochester Electronics LLC NDS352P

    MOSFET P-CH 20V 850MA SUPERSOT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS352P Bulk 987
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    onsemi NDS352P

    MOSFET P-CH 20V 850MA SUPERSOT3
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    DigiKey NDS352P Cut Tape
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    NDS352P Reel
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    MOSLEADER NDS352AP-NL-ML

    P-Channel -30V -0.9A SOT-23-3
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    DigiKey NDS352AP-NL-ML Reel 200
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    Fairchild Semiconductor Corporation NDS352AP

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NDS352AP 26,564
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    NDS352AP 17,072
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    NDS352AP 10,504
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    NDS352AP 7,384
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    NDS352AP 4,499 14
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    • 100 $0.1875
    • 1000 $0.1125
    • 10000 $0.075
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    Quest Components NDS352AP 11,591
    • 1 $0.911
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    • 100 $0.911
    • 1000 $0.911
    • 10000 $0.1594
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    NDS352AP 5,154
    • 1 $0.911
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    NDS352AP 3,815
    • 1 $0.525
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    • 1000 $0.1575
    • 10000 $0.105
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    NDS352AP 3,599
    • 1 $0.5
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    NDS352AP 3,552
    • 1 $0.645
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    • 100 $0.645
    • 1000 $0.258
    • 10000 $0.2258
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    NDS352AP 2,842
    • 1 $0.911
    • 10 $0.911
    • 100 $0.911
    • 1000 $0.2733
    • 10000 $0.1822
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    NDS352AP 1,580
    • 1 $0.911
    • 10 $0.911
    • 100 $0.2733
    • 1000 $0.1822
    • 10000 $0.1822
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    NDS352AP 868
    • 1 $0.911
    • 10 $0.911
    • 100 $0.41
    • 1000 $0.2733
    • 10000 $0.2733
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    ComSIT USA NDS352AP 8,382
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    Chip 1 Exchange NDS352AP 150
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    Win Source Electronics NDS352AP 93,870
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    NDS352 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS352AP Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS352AP Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS352AP Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS352AP Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS352AP National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS352AP_D87Z Fairchild Semiconductor Transistor Mosfet P-CH 30V 0.9A 3 pin SOT-23 T/R Original PDF
    NDS352P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDS352P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effec Original PDF
    NDS352P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS352P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDS352P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    NDS352 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    R1402

    Abstract: F501 sot23 ELCO6200
    Text: 1 2 3 4 5 6 7 8 L26 6 1 5 4 GND H8AGND C262 0.1U 1206 VR_CHGNG# PME# THRM_CLK THRM_DATA H8AGND D23 SD[0.7] SD[0.7] +5VS +5V KBD_US/JP# H8_PWRON S SCI# Q501 NDS352P SOT23_FET RLS4148 MLL34B +5V R116 G 2 1 R523 10K 0603B ST/MA-3 CONN_DF13V_3 2 1 1 2 LED_CLK


    Original     		120Z/100M 0805C 0603B RLS4148 MLL34B DTC144WK OT23AN R1402 F501 sot23 ELCO6200 PDF

    NDS352P

    Abstract: No abstract text available
    Text: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		NDS352P NDS352P PDF

    NDS352P

    Abstract: p-Channel Logic Level Enhancement Mode
    Text: N March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS352P NDS352P p-Channel Logic Level Enhancement Mode PDF

    SOT-23N

    Abstract: c559 D1313 R17-1 RSMRST
    Text: 1 2 3 4 5 6 7 8 sent to d/d bd for charging comparator ckt when system is in powered off state VDD5 VDD5S Q9 A R127 470K 0603B RP511 7 7 7 7 5 6 7 8 A20M# IGNNE# INTR NMI 4 3 2 1 C_A20M# 2 C_IGNNE# 2 C_INTR 2 C_NMI 2 A NDS352P SOT23_FET D13 1 3 ADEN# 2 RP0X4


    Original     		RP511 0603B NDS352P BAV70LT1 OT23N DTC144WK OT23AN 0603B SOT-23N c559 D1313 R17-1 RSMRST PDF

    nds352ap g

    Abstract: NDS352AP
    Text: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS352AP NDS352Ap nds352ap g PDF

    NDS352AP

    Abstract: No abstract text available
    Text: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS352AP NDS352AP PDF

    BT501

    Abstract: atq20 RSMRST RLS4148 6020 - MOTHER BD
    Text: 1 2 3 4 5 6 7 8 pull high at d/d bd R133 VDD3 2 VDD5S 1 RSMRST# K ADEN# 1 A 1 D13 2 R134 10K 0603B A R67 470K 0603B D21 RLS4148 MLL34B G R14 47K 0603 RLS4148 MLL34B C217 0.1U 0603B 2 GND 3 A JP_NET JP_NET15 2 4.7K 0603 pull low at PQ510 JL26 Q11 NDS352P S


    Original     		NDS352P 0603B NET15 PQ510 RLS4148 MLL34B DTC144WK OT23AN BT501 atq20 RSMRST 6020 - MOTHER BD PDF

    NDS352P

    Abstract: No abstract text available
    Text: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		NDS352P NDS352P PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS352AP PDF

    BAV99-SOT23

    Abstract: mitac mitac 6120 str 5V 3A rls4148
    Text: 1 2 3 4 5 6 7 8 VMAIN F5 pull high at d/d bd 1 2 FUSE_1206 1A-1206 VDD5 R170 0603 VDD5SW C280 10U 1206 10V LP2951-02BM 2 1 R160 47K 0603 GND R181 100K 0603B R193 Q20 NDS352P S D VDD5S 100K 0603B PME# 18 ADEN# 18,22 18,22 3 STR# RLS4148 MLL34B JP_NET JP_NET15


    Original     		A-1206 LP2951-02BM NDS352P 0603B DTC144WK OT23AN PQ510 0603B SI2301DS RLS4148 BAV99-SOT23 mitac mitac 6120 str 5V 3A PDF

    NDS352AP

    Abstract: nds352
    Text: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process


    Original     		NDS352AP NDS352Ap nds352 PDF

    NDS352AP

    Abstract: No abstract text available
    Text: February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS352AP NDS352Ap PDF

    interfacing PIC18F4550 with CAN

    Abstract: PIC18F4550 mplab CAN bus MCP2515 source code pic18f4550 assembly PIC18f4550 assembly programming schematic diagram of pic18f4550 DS51757A usb connection to PIC18f4550 pin diagram of PIC18f4550 mcp2515 source KT143-3
    Text: MCP2515 CAN Bus Monitor Demo Board User’s Guide 2008 Microchip Technology Inc. DS51757A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		MCP2515 DS51757A DS51757A-page interfacing PIC18F4550 with CAN PIC18F4550 mplab CAN bus MCP2515 source code pic18f4550 assembly PIC18f4550 assembly programming schematic diagram of pic18f4550 DS51757A usb connection to PIC18f4550 pin diagram of PIC18f4550 mcp2515 source KT143-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL6256, ISL6256A Data Sheet June 1, 2007 Highly Integrated Battery Charger with Automatic Power Source Selector for Notebook Computers Features • ±0.5% Charge Voltage Accuracy -10°C to +100°C The ISL6256, ISL6256A is a highly integrated battery charger


    Original     		ISL6256, ISL6256A ISL6256A FN6499 PDF

    ac power adapter for notebook schematic

    Abstract: 6255HRZ ISL6255AHRZ 6255HAZ SMD diode MARKING 8P DIODE smd marking R12 ISL AHAZ power adapter for notebook schematic 0.125w resistor 1/8 ISL6255
    Text: ISL6255EVAL1Z Evaluation Board Setup Procedure April 10, 2007 Application Note AN1296.0 General Description Features The ISL625xEVAL1B EV kit includes all the circuitry needed to demonstrate the capabilities of the ISL6255 Lithium-Ion battery-charger with integrated AC adapter current limit. The


    Original     		ISL6255EVAL1Z AN1296 ISL625xEVAL1B ISL6255 ISL6255, ISL6255A ac power adapter for notebook schematic 6255HRZ ISL6255AHRZ 6255HAZ SMD diode MARKING 8P DIODE smd marking R12 ISL AHAZ power adapter for notebook schematic 0.125w resistor 1/8 PDF

    ac power adapter for notebook schematic

    Abstract: 6256HRZ power adapter for notebook schematic top marking 91a sot23 DIODE smd marking R12 R20 marking R24 marking DATASHEET resistor smd 0805 ISL6256HRZ ISL6256AHRZ
    Text: ISL6256AEVAL1Z Evaluation Board Setup Procedure Application Note October 26, 2007 AN1363.0 Low Cost Multi-Chemistry Battery Charger Controller Features The ISL6256, ISL6256A is a highly integrated battery charger controller for Li-ion/Li-ion polymer batteries. High Efficiency is


    Original     		ISL6256AEVAL1Z AN1363 ISL6256, ISL6256A ac power adapter for notebook schematic 6256HRZ power adapter for notebook schematic top marking 91a sot23 DIODE smd marking R12 R20 marking R24 marking DATASHEET resistor smd 0805 ISL6256HRZ ISL6256AHRZ PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 PAIRCHII-D M ICDNDUCTQ R tm NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		NDS352P PDF

    bu 517

    Abstract: NDS352P
    Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		NDS352P b50113D 003T74G bSD113D bSD113D 317H2 bu 517 NDS352P PDF

    n018

    Abstract: NDS352P
    Text: March 1996 FAIRCHILD MICDNDUCTDR t m NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		NDS352P NDS352P n018 PDF

    NDS352AP

    Abstract: supersot-3
    Text: February 1997 FAIRCHILD Ml C O N D U C T O R i NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral D escription These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan     		NDS352AP NDS352AP supersot-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1997 M l G C IN D U C T O R NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDS352AP PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1996 F A IR C H IL D SEM IC ONDUCTO R tm NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		NDS352P NDS352P PDF

    Untitled

    Abstract: No abstract text available
    Text: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDS352AP NDS352Ap PDF