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    onsemi NDP6020P

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    NDP6020 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDP6020 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP6020 National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP6020 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP6020P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP6020P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP6020P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDP6020P_NL Fairchild Semiconductor -20V P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    NDP6020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R6024

    Abstract: NDB6020P NDP6020P zener diode 5v with reverse recovery time 1us NDP602
    Text: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field


    Original     		PDF NDP6020P NDB6020P R6024 NDB6020P zener diode 5v with reverse recovery time 1us NDP602

    NDB6020P

    Abstract: NDP6020P
    Text: N November 1996 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDP6020P NDB6020P NDB6020P

    Untitled

    Abstract: No abstract text available
    Text: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field


    Original     		PDF NDP6020P NDB6020P

    zener diode 5v with reverse recovery time 1us

    Abstract: 201U-S R6024 NDB6020P NDP6020P
    Text: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field


    Original     		PDF NDP6020P NDB6020P zener diode 5v with reverse recovery time 1us 201U-S R6024 NDB6020P

    NDB6020

    Abstract: NDP6020 FAST POWER D zener diode reverse breakdown voltage 4.5V
    Text: N November 1996 NDP6020 / NDB6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDP6020 NDB6020 NDB6020 FAST POWER D zener diode reverse breakdown voltage 4.5V

    zener diode 3.0 b2

    Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6020 NDP4060L
    Text: November 1996 NDP6020 / NDB6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6020 NDB6020 zener diode 3.0 b2 m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6020 NDP4060L

    V98200

    Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6020 NDP4060L NDP6020 M/tda 9852
    Text: November 1996 NDP6020 / NDB6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6020 NDB6020 V98200 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6020 NDP4060L M/tda 9852

    IRF74D

    Abstract: 2N39D6 rfid based toll tax ADP3328 ADP33 329d IRF74D4 IRF7404 NDP602 ADP3319
    Text: DEVICES FAX-aN-DEMAND HOTLINE - Page r-. ANALOG ~ DEVICES PrecisionVoltage RegulatorController ADP3310 FEATURES :!:1.5% Accuracy Over Line, Load and Temperature Low gOOJ.1A Typical! Quiescent Current Shutdown Current: 1 J.1A(Typical! Stable with 10 J.1FLoad Capacitor


    Original     		PDF ADP331 ADP3310 ADP33 IRF74D 2N39D6 rfid based toll tax ADP3328 329d IRF74D4 IRF7404 NDP602 ADP3319

    LM2975

    Abstract: l46b voltage regulator l46A lm2975ai-x.x L45A lm297 LM2975AI-X LP2975AIM
    Text: LP2975 www.ti.com SNVS006E – MAY 2004 – REVISED JUNE 2011 MOSFET LDO Driver/Controller Check for Samples: LP2975 FEATURES DESCRIPTION • • • • • • A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET,


    Original     		PDF LP2975 SNVS006E LP2975 LM2975 l46b voltage regulator l46A lm2975ai-x.x L45A lm297 LM2975AI-X LP2975AIM

    NDP6020P

    Abstract: ADP3328 ADP3328AR "Precision Voltage Regulator" ADP3310 ADP3310AR-3 ADP3310AR-5 ADP3319 ADP3319AR-1 ADP3319AR-2
    Text: a Precision Voltage Regulator Controller ADP3310 FEATURES ؎1.5% Accuracy Over Line, Load and Temperature Low Power BiCMOS: 800 ␮A Quiescent Current Shutdown Current: 1 ␮A Typical Stable with 10 ␮F Load Capacitor +2.5 V to +15 V Operating Range Fixed Output Voltage Options: 2.8 V, 3 V, 3.3 V, 5 V


    Original     		PDF ADP3310 C2982 5M55mV NDP6020P ADP3328 ADP3328AR "Precision Voltage Regulator" ADP3310 ADP3310AR-3 ADP3310AR-5 ADP3319 ADP3319AR-1 ADP3319AR-2

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    IC 4090

    Abstract: data sheet IC 4090
    Text: a Lithium-Ion Battery Charger ADP3820 FUNCTIONAL BLOCK DIAGRAM FEATURES ؎1% Total Accuracy 630 ␮A Typical Quiescent Current Shutdown Current: 1 ␮A Typical Stable with 10 ␮F Load Capacitor 4.5 V to 15 V Input Operating Range Integrated Reverse Leakage Protection


    Original     		PDF OT-23-6 ADP3820 ADP3820 C2986a IC 4090 data sheet IC 4090

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    LM2975

    Abstract: LM297 L45A 6100B RSC11 fpg 12v L47B ic MARKING FZ LP2975 LP2975AIMMX-12
    Text: LP2975 MOSFET LDO Driver/Controller General Description Features A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET, the LP2975 will deliver an ultra low dropout regulator with extremely low quiescent current.


    Original     		PDF LP2975 LP2975 LM2975 LM297 L45A 6100B RSC11 fpg 12v L47B ic MARKING FZ LP2975AIMMX-12

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H September 1997 I L D SEM IC ONDUCTO R tm NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. Rds on = 0.05 £2 @ VGS= -4.5 V. RDS(0N) = 0.07£2 @ VGS= -2.7 V. Rds(0N) = 0.075 £2 @ VGS= -2.5 V.


    OCR Scan     		PDF NDP6020P NDB6020P

    ndp602dp

    Abstract: NDB6020P NDP6020P EFB810-3/4-3/NDP6020P
    Text: |R C H | September 1997 SEM ICONDUCTÜR tm NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP6020P NDB6020P ndp602dp NDB6020P EFB810-3/4-3/NDP6020P

    Diode lt 725

    Abstract: P6020P
    Text: Sept mber 1997 s e m ic d n d u c t o r NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP6020P NDB6020P P6020P Diode lt 725

    SL-1-C1-0R050L

    Abstract: No abstract text available
    Text: ANALOG ► DEVICES Precision Voltage Regulator Controller ADP3310 FEATURES ±1.5% Accuracy Over Line, Load and Temperature Low Power BiCMOS: 800 |*.A Quiescent Current Shutdown Current: 1 |j.A Typical Stable with 10 |iF Load Capacitor +2.5 V to +15 V Operating Range


    OCR Scan     		PDF ADP3310 Q052bbH SL-1-C1-0R050L