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    NDC70 Price and Stock

    onsemi NDC7002N

    MOSFET 2N-CH 50V 0.51A SSOT6
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    DigiKey NDC7002N Reel 102,000 3,000
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    NDC7002N Cut Tape 1,220 1
    • 1 $0.42
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    NDC7002N Digi-Reel 1
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    Avnet Americas NDC7002N Reel 9,000 12 Weeks 3,000
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    NDC7002N Reel 6,000
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    NDC7002N Ammo Pack 24 Weeks, 4 Days 5
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    Mouser Electronics NDC7002N 79,927
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    Verical NDC7002N 9,000 3,000
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    NDC7002N 1,670 49
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    Arrow Electronics NDC7002N 9,000 12 Weeks 3,000
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    Bristol Electronics NDC7002N 2,860
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    Quest Components NDC7002N 1,185
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    Rochester Electronics NDC7002N 1,851 1
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    TME NDC7002N 2,150 1
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    Richardson RFPD NDC7002N 6,000
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    New Advantage Corporation NDC7002N 37,022 1
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    onsemi NDC7003P

    MOSFET 2P-CH 60V 0.34A SSOT6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDC7003P Reel 9,000 3,000
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    NDC7003P Cut Tape 1,254 1
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    NDC7003P Digi-Reel 1
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    Avnet Americas NDC7003P Reel 9,000 12 Weeks 3,000
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    Mouser Electronics NDC7003P 26,972
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    Verical NDC7003P 24,000 3,000
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    Arrow Electronics NDC7003P 24,000 12 Weeks 3,000
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    Rochester Electronics NDC7003P 6,529 1
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    Richardson RFPD NDC7003P 6,000
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    onsemi NDC7001C

    MOSFET N/P-CH 60V 0.51A SSOT6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDC7001C Reel 9,000 3,000
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    NDC7001C Cut Tape 2,530 1
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    NDC7001C Digi-Reel 1
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    Avnet Americas NDC7001C Ammo Pack 15 Weeks, 5 Days 1
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    NDC7001C Reel 6,000
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    Mouser Electronics NDC7001C 92,011
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    Verical NDC7001C 204,000 3,000
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    NDC7001C 120,000 3,000
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    NDC7001C 27,000 3,000
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    Arrow Electronics NDC7001C 27,000 12 Weeks 3,000
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    NDC7001C Cut Strips 200 12 Weeks 1
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    Rochester Electronics NDC7001C 1,496 1
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    TME NDC7001C 1,725 5
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    Flip Electronics NDC7001C 6,000
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    New Advantage Corporation NDC7001C 480,000 1
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    UMW NDC7002N

    MOSFET 50V 0.51A SOT23-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDC7002N Reel 3,000 3,000
    • 1 -
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    • 10000 $0.17574
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    NDC7002N Cut Tape 1,717 1
    • 1 $0.53
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    NDC7002N Digi-Reel 1
    • 1 $0.53
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    Karl Kruse GmbH & Co KG NDC7002N 10,000
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    onsemi NDC7002N_SB9G007

    MOSFET 2N-CH 50V 0.51A SSOT6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDC7002N_SB9G007 Reel 6,000
    • 1 -
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    Find more NDC70 price and stock on Findchips.com

    NDC70 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDC7001 Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7001C Fairchild Semiconductor Dual N & P-Channel Enhancement Mode Field Effect T Original PDF
    NDC7001C Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDC7001C National Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7001C National Semiconductor Dual N & P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7001C_NL Fairchild Semiconductor Dual N & P Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Trans Original PDF
    NDC7002N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDC7002N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7002N National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDC7002N_NL Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7002N_SB9G007 Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH DUAL 50V 6-SSOT Original PDF
    NDC7003P Fairchild Semiconductor Dual P-Channel PowerTrench MOSFET Original PDF
    NDC7003P Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDC7003P National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDC70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to


    Original     		PDF NDC7001C

    Untitled

    Abstract: No abstract text available
    Text: NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state


    Original     		PDF NDC7003P

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC7003P

    NDC7002N

    Abstract: 051A
    Text: N March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    Original     		PDF NDC7002N NDC7002N 051A

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC633N NDC7003P
    Text: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC7003P SSOT-6 CBVK741B019 F63TNR FDC633N NDC7003P

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC7002N

    NDC7002N

    Abstract: CBVK741B019 F63TNR FDC633N
    Text: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC7002N NDC7002N CBVK741B019 F63TNR FDC633N

    NDC7003P

    Abstract: No abstract text available
    Text: N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been designed


    Original     		PDF NDC7003P NDC7003P

    PL504

    Abstract: PQ508 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518
    Text: PQ508 SI4435DY PD509 A PL1 A 1 2 6 VADJ_1 5 PQ1B NDC7002N 1 2 VADJ_2 5 PR9 1M 0603 1% 1 2 1 PQ1A NDC7002N 2 2 1 PR6 1M 0603 1% 1 PR7 1M 0603 1% 2 1M 0603 1% 1 PR3 34K 0603 1% PR507 34K 0603 1% 2 PR2 2 PR4 10K 0603B 1% 1 1 1 PC6 1000P 0603B 10%,X7R 2 PR508


    Original     		PDF PQ508 SI4435DY 80UH/33T/D PD506 SFPJ-73 DC2010 PR517 PC524 PL504 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDC7001C

    NDC7003P

    Abstract: No abstract text available
    Text: N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process


    Original     		PDF NDC7003P NDC7003P

    CBVK741B019

    Abstract: F63TNR FDC633N NDC7001C
    Text: March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDC7001C CBVK741B019 F63TNR FDC633N NDC7001C

    marking NDC7003P

    Abstract: marking 34A NDC7003P
    Text: NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state


    Original     		PDF NDC7003P marking NDC7003P marking 34A NDC7003P

    NDC7001C

    Abstract: siemens
    Text: N March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    Original     		PDF NDC7001C NDC7001C siemens

    NDC7002N

    Abstract: No abstract text available
    Text: March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features 0.51A, 50V, RDS ON = 2Ω @ VGS=10V These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC7002N NDC7002N

    NDC7003P

    Abstract: 034A
    Text: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDC7003P bSD113D NDC7003P 034A

    Untitled

    Abstract: No abstract text available
    Text: [N March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These d ual P-C hannel e n h a n ce m e n t m od e pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDC7003P

    Untitled

    Abstract: No abstract text available
    Text: [N M a rc h 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-ehannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7001C C7001C

    NDC7001C

    Abstract: VX25
    Text: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7001C tS0113G Q03T7T3 NDC7001C VX25

    7001c

    Abstract: No abstract text available
    Text: F A IR C H IL D March 1996 SEMICONDUCTOR i NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-chanrtel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDC7001C iJ111 7001c

    dc7002n

    Abstract: No abstract text available
    Text: SEM IC ONDUCTO R tm NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		PDF NDC7002N dc7002n

    ndc7002n

    Abstract: No abstract text available
    Text: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7002N ndc7002n

    SOT-6 1C

    Abstract: No abstract text available
    Text: PAIRCHII-D M a rc h 1 9 9 6 MICDNDUCTQ R tm NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		PDF NDC7003P SOT-6 1C

    NDC7002N

    Abstract: Supersot6 SOT-6 1C
    Text: fN M a rc h 1 9 9 6 NDC7002N Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features These dual N -C hannel en h a n ce m e n t m ode pow er field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7002N NDC7002N Supersot6 SOT-6 1C