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    United Chemi-Con Inc TND10V-221KB00AAA0

    VARISTOR 220V 3.5KA DISC 10MM
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    DigiKey TND10V-221KB00AAA0 Bulk 2,900 1
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    Chip1Stop TND10V-221KB00AAA0 Bulk 35,963
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    WeEn Semiconductor Co Ltd WND10P08XQ

    DIODE GEN PURP 800V 10A TO220F
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    DigiKey WND10P08XQ Tube 1,422 1
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    Avnet Asia WND10P08XQ 8 Weeks 6,000
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    Avnet Silica WND10P08XQ 9 Weeks 1,000
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    Ohmite Mfg Co WND100FET

    RES 100 OHM 1% 3W AXIAL
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    DigiKey WND100FET Cut Tape 1,045 1
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    WND100FET Reel 500 500
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    Newark WND100FET Cut Tape 16 1
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    Master Electronics WND100FET
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    United Chemi-Con Inc TND10SV431KTLBPAA0

    VARISTOR 430V 3.5KA DISC 10MM
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    DigiKey TND10SV431KTLBPAA0 Ammo Pack 1,000 500
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    TND10SV431KTLBPAA0 Cut Tape 1,000 1
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    United Chemi-Con Inc TND10SV561KTLBPSA0

    VARISTOR 560V 3.5KA DISC 10MM
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    ND10 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ND10 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    Nd100 INO Rare-earth-doped fiber Original PDF
    ND101 AUK Antenna Switching Pin Diode Original PDF
    Nd101 INO Rare-earth-doped fiber Original PDF
    ND1010500000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK PLUG 10POS STR 3.5MM Original PDF
    Nd102 INO Rare-earth-doped fiber Original PDF
    Nd103 INO Rare-earth-doped fiber Original PDF
    ND104N Eupec Phase Control Thyristor Module / Rectifier Diode Module Original PDF
    ND104N Eupec Diode: Rectifier Diode Module: 2400V Original PDF
    ND104N Infineon Technologies PowerBLOCK Rectifier Diode Modules; Package: BG-PB20-1; VDRM/ VRRM (V): 1,200.0 - 1,800.0 V; IFSM (max): 2,500.0 A; IFAVM/Tc: 104/100 (180° el sin); Housing: PowerBLOCK 20 mm; Features: Rectifier Diode; Original PDF
    ND104N06K Eupec 104A Iout, 600V Vrrm General Purpose Silicon Rectifier Scan PDF
    ND104N08K Eupec 104A Iout, 800V Vrrm General Purpose Silicon Rectifier Scan PDF
    ND104N12K Eupec DIODE STANDARD RECOVERY RECTIFIER 1200V 104A Original PDF
    ND104N12KHPSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GP 1.2KV 104A BG-PB20-1 Original PDF
    ND104N14K Eupec DIODE STANDARD RECOVERY RECTIFIER 1600V 104A Original PDF
    ND104N16K Eupec DIODE STANDARD RECOVERY RECTIFIER 1400V 104A Original PDF
    ND104N16KHPSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GP 1.6KV 104A BG-PB20-1 Original PDF
    ND104N18K Eupec DIODE STANDARD RECOVERY RECTIFIER 1800V 104A Original PDF
    ND104N18KHPSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GP 1.8KV 104A BG-PB20-1 Original PDF
    ND1070500000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK PLUG 10POS STR 5MM Original PDF

    ND10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 channel 1 package type antenna switching diode array

    Abstract: S12 MARKING CODE DIODE ND102M4AL
    Text: ND102M4AL Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]


    Original
    PDF ND102M4AL 12PDFN KSD-D5H002-001 Rev01 4 channel 1 package type antenna switching diode array S12 MARKING CODE DIODE ND102M4AL

    ND102M6L

    Abstract: S12 MARKING DIODE triple-band antenna switch
    Text: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]


    Original
    PDF ND102M6L 12PDFN KSD-D5H003-001 Rev00 ND102M6L S12 MARKING DIODE triple-band antenna switch

    Untitled

    Abstract: No abstract text available
    Text: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]


    Original
    PDF ND102M4L 12PDFN KSD-D5H001-000 Rev00

    ksd 75

    Abstract: uhf pcb antenna ND101
    Text: ND101 Semiconductor Antenna Switching Pin Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND101 E SOD-923 Outline Dimensions


    Original
    PDF ND101 OD-923 KSD-D6E006-000 ksd 75 uhf pcb antenna ND101

    A5 DIODE

    Abstract: A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000
    Text: ND102M6L Semiconductor Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]


    Original
    PDF ND102M6L 12PDFN KSD-D5H003-000 Rev00 A5 DIODE A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000

    Untitled

    Abstract: No abstract text available
    Text: ND102 Semiconductor Antenna Switching Diode Features • Low capacit ance : Max.0.4pF • Low series resist ance : rs= 1.0Ω Typ. @I F= 10m A • UHF/ VHF Band RF Swit ch Applicat ions Ordering Information Type N o. M a r k in g Pa ck a ge Code ND102 S SOD- 923


    Original
    PDF ND102 KSD-D6E006-001

    S12 MARKING CODE DIODE

    Abstract: ND102 s12 diode
    Text: ND102 Semiconductor Antenna Switching Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND102 S SOD-923 Outline Dimensions


    Original
    PDF ND102 OD-923 KSD-D6E006-001 S12 MARKING CODE DIODE ND102 s12 diode

    S12 MARKING CODE DIODE

    Abstract: No abstract text available
    Text: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]


    Original
    PDF ND102M4AL 12PDFN KSD-D5H002-002 Rev01 S12 MARKING CODE DIODE

    ND102M4L

    Abstract: No abstract text available
    Text: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]


    Original
    PDF ND102M4L 12PDFN KSD-D5H001-000 Rev00 ND102M4L

    Untitled

    Abstract: No abstract text available
    Text: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]


    Original
    PDF ND102M6L 12PDFN KSD-D5H003-001 Rev00

    ND101

    Abstract: No abstract text available
    Text: ND101 Semiconductor Antenna Switching Pin Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND101 E SOD-923 Outline Dimensions


    Original
    PDF ND101 OD-923 KSD-D6E006-001 ND101

    Untitled

    Abstract: No abstract text available
    Text: ND101 Semiconductor Antenna Switching Pin Diode Features • Low capacit ance : Max.0.4pF • Low series resist ance : rs= 1.0Ω Typ. @I F= 10m A • UHF/ VHF Band RF Swit ch Applicat ions Ordering Information Type N o. M a r k in g Pa ck a ge Code ND101


    Original
    PDF ND101 KSD-D6E006-001

    Untitled

    Abstract: No abstract text available
    Text: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]


    Original
    PDF ND102M4AL 12PDFN KSD-D5H002-002 Rev01

    vbg marking code SOT23

    Abstract: PF08109B CAPACITOR 33PF PF08122B PF08123B LTC4400-1 LTC4400-2 PF08107B RF3108 schottky diode 2GHz to 3GHz
    Text: LTC4400-1/LTC4400-2 RF Power Controllers with 450kHz Loop BW and 45dB Dynamic Range U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO RF Power Amplifier Control in ThinSOTTM Package Internal Schottky Diode Detector with > 45dB Range


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    PDF LTC4400-1/LTC4400-2 450kHz 800MHz LTC4400-1) LTC4400-2) LTC5507 100kHz LTC5508 300MHz vbg marking code SOT23 PF08109B CAPACITOR 33PF PF08122B PF08123B LTC4400-1 LTC4400-2 PF08107B RF3108 schottky diode 2GHz to 3GHz

    DZ1070N

    Abstract: powerblock dd DATASHEET SCR SCR Phase Control Diode SCR ND89N DD435N28 DD540N DZ950N36 ND171
    Text: Overview PowerBLOCK Diode Modules for Phase Control 4400 DZ950N36.44K 4200 4000 3800 3600 3200 3000 DD435N28.40K DD175N28.34K 3400 2800 DZ1070N. DD540N. DZ540N. 2200 DD/ND261N. DD98N20.25K 2400 DD/ND231N. 2600 2000 DD/ND600N. DZ600N.


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    PDF DZ950N36. DD435N28. DD175N28. DZ1070N. DD540N. DZ540N. DD/ND261N. DD98N20. DD/ND231N. DD/ND600N. DZ1070N powerblock dd DATASHEET SCR SCR Phase Control Diode SCR ND89N DD435N28 DD540N DZ950N36 ND171

    ND1005

    Abstract: D7420
    Text: SAW Delay-Line 836D253 1. Features z CDMA RF Delay-Line z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 2. Package Dimension 15.2±0.2 5.1±0.2 10.2±0.2 30.4±0.2 58.4±0.2


    Original
    PDF 836D253 04A001 D7420 Par10 ND1005-CS02 ND1005 D7420

    D3512

    Abstract: ITF04A001
    Text: SAW Delay-Line 881D251 1. Features CDMA RF Delay-Line Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40 ✗ ~ 85 ✗ Electrostatics Sensitive Device ESD 2. Package Dimension ☛ ✌✡ ☞ ✔☛✡ ✓ ✒☎✒✎✏✑ ✆☎✞✎✏✑


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    PDF 881D251 ND1002-CS02 D3512 ITF04A001

    Untitled

    Abstract: No abstract text available
    Text: High Resolution X-ray Imaging System High Resolution X-ray Imaging System R ▲ M11427-42 Camera: ORCA-Flash4.0V2 The high resolution X-ray imaging system is designed for the application of X-ray beam alignment. Adopting unique mechanism, it enables to combine


    Original
    PDF M11427-42 B1201 SCAS0011E13 OCT/2014

    pf08123

    Abstract: LT5503
    Text: LTC4400-1/LTC4400-2 RF Power Controllers with 450kHz Loop BW and 45dB Dynamic Range FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO RF Power Amplifier Control in ThinSOTTM Package Internal Schottky Diode Detector with > 45dB Range


    Original
    PDF LTC4400-1/LTC4400-2 450kHz 300MHz LTC4400-1) LTC4400-2) LTC5507 100kHz LTC5508 pf08123 LT5503

    s6 68a diode

    Abstract: No abstract text available
    Text: LTC4401-1/LTC4401-2 RF Power Controllers with 250kHz Loop BW and 45dB Dynamic Range FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO TM RF Power Amplifier Control in ThinSOT Package Internal Schottky Diode Detector with > 45dB Range


    Original
    PDF LTC4401-1/LTC4401-2 250kHz 300MHz LTC4401-1) LTC4401-2) LTC3404 LTC3405 250mA LTC4400 s6 68a diode

    CX77302

    Abstract: BGY280 LTC1757A LTC1758-1 LTC1758-2 RM009 12E15
    Text: LTC1758-1/LTC1758-2 RF Power Controllers with 250kHz Control Loop Bandwidth and 40dB Dynamic Range DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Dual Band RF Power Amplifier Control LTC1758-2 Internal Schottky Diode Detector with Improved


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    PDF LTC1758-1/LTC1758-2 250kHz LTC1758-2) LTC1757A 850MHz 100mA, LTC1957 LTC1758) LTC3200/LTC3200-5 CX77302 BGY280 LTC1757A LTC1758-1 LTC1758-2 RM009 12E15

    VDD-1000

    Abstract: N04 U1 n057 b n017 PEEL programming ND10 ND12 TQ8033 304-pin dimensions bga nd38
    Text: T H I Q U I N T S E M I C O N D U C T O R , I N C K g TQ8033 PRELIMINARY DATA SHEET Features > 1.5 Gb/s/port data bandwidth; >50 Gb/s aggregate bandwidth • Fully differential data path with 64 inputs and 33 outputs • Non-blocking architecture • 150 ps delay match


    OCR Scan
    PDF TQ8033 VDD-1000 N04 U1 n057 b n017 PEEL programming ND10 ND12 304-pin dimensions bga nd38

    fp1320

    Abstract: No abstract text available
    Text: Guidelines for Handling J-Lead & QFP Devices Ju n e 1996, ver. 2 Introduction Application Note 71 S u rfa c e -m o u n t J-lead a n d q u a d flat p ac k Q FP d ev ic e s a re c u rre n tly in h ig h d e m a n d . A ll d ev ic e p a c k a g e s re q u ire p ro te c tio n d u rin g


    OCR Scan
    PDF

    RT-DA502PRA

    Abstract: RT-530 RT-DC302PR RT-DC502PRA RT-DA1012 RT-DA402PR RT-DDA302PRA PM 5.08/2/sanyo led display sl
    Text: OPTOELECTRONIC PRODUCTS RODAN V - / fMifr : & & ^ + S ^ f f i ^ W * M S S l f c 5 £ ^ * ± 0 K A Y A ELECTR IC INDUSTRIES CO., L T D j M r ' g ' f F • ± l T 5 I J l p an : (3 £*<»*«##( 5#) ° INTRODUCTION: Since 1974 our company-RODAN (TAIWAN) LTD. has been cooperating in technic with Japan


    OCR Scan
    PDF 05-------------lâ RT-DA502PRA RT-530 RT-DC302PR RT-DC502PRA RT-DA1012 RT-DA402PR RT-DDA302PRA PM 5.08/2/sanyo led display sl