application of b-h curve
Abstract: motor 42SH e352 NEOREC 42SH
Text: Nd-Fe-B Bonded Magnets Compress Molded Type CM series Issue date: March 2008 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific
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2002/95/EC,
application of b-h curve
motor 42SH
e352
NEOREC
42SH
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47B diode
Abstract: hcj 30 31uH BPL18 FB6H ferrite FB1A BQA14 FB6N FB3G
Text: 1/1 001-01 / 20010903 / e312.fm Magnets Magnetization Characteristics and Typical Shapes MAGNETIZATION CHARACTERISTICS DISTRIBUTION CHARTS RARE EARTH (REC, NEOREC) MAGNETS 1.5 NEOREC (Nd-Fe-B) 50 1.4 47B 44 41 1.3 44H 41H 40 38SH 38H 37H 34H 32H 36 1.2 Remanent flux density Br (T)
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CM-11B
BPK20
BPL20
BPK18
BPL18
BQA14
BPB12
BQC14
BQE14
47B diode
hcj 30
31uH
BPL18
FB6H
ferrite
FB1A
BQA14
FB6N
FB3G
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Untitled
Abstract: No abstract text available
Text: PM4341A T1XC DATA SHEET ISSUE 7 T1 FRAMER/TRANSCEIVER :0 5: 21 AM PMC-900602 ,0 3M ay ,2 00 4 11 PM4341A fe fo n Mo nd ay T1XC DATA SHEET Do wn lo ad ed by ef we fe fe fo fe SINGLE DSX-1 TRANSCEIVER DEVICE ISSUE 7: JUNE 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE
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PM4341A
PMC-900602
PM4341A
PMC89rranties
PMC-891007
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EF732
Abstract: No abstract text available
Text: PM5348 S/UNI-DUAL DATA SHEET ISSUE 7 SATURN USER NETWORK INTERFACE :4 7: 31 PM PMC-950919 TM 3M ay S/UNI- ,2 00 4 02 PM5348 nd ay ,0 155-DUAL fo fe fe fo n Mo S/UNI-155-DUAL DATA SHEET Do wn lo ad ed by ef we fe fe DUAL SATURN USER NETWORK INTERFACE 155.52 & 51.84 MBIT/S
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PM5348
PMC-950919
PM5348
155-DUAL
S/UNI-155-DUAL
PMC-950716,
PMC-950919
PMC-950716
EF732
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Untitled
Abstract: No abstract text available
Text: RoHS Material Composition Declaration Manufacturer Information Company: Authorised Representative Anton Walles Name: Senior Logistics Engineer Title: +27 21 863 0033 Phone: anton.walles@azoteq.com Email: www.azoteq.com Web: Azoteq Pty Ltd 109 Main Road Paarl
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IQS128
TSOT23/6LD
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PDF
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Untitled
Abstract: No abstract text available
Text: RoHS Material Composition Declaration Manufacturer Information Company: Authorised Representative Anton Walles Name: Senior Logistics Engineer Title: +27 21 863 0033 Phone: anton.walles@azoteq.com Email: www.azoteq.com Web: Azoteq Pty Ltd 109 Main Road Paarl
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IQS904A
TSOT23/6LD
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PDF
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Coffin-Manson Equation
Abstract: s-n curve igbt thermal characterization and simulation using ansys Coffin-Manson exponent copper bond wire
Text: Prediction of high cycle fatigue in aluminum bond wires: A physics of failure approach combining experiments and multi-physics simulations Jeroen Bielen, Jan-Joris Gommans, Frank Theunis Philips Semiconductors –Innovation Centre for RF Gerstweg 2, 6534AE Nijmegen, The Netherlands
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6534AE
Coffin-Manson Equation
s-n curve
igbt thermal characterization and simulation using ansys
Coffin-Manson exponent
copper bond wire
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Untitled
Abstract: No abstract text available
Text: Cover and contents 22/11/01 2:04 pm Page 2 Precision Systems for the Electronics Bench SOLDERING, DESOLDERING AND REWORK SYSTEMS Precision Systems for the Electronics Bench WORLD HEADQUARTERS AND NORTH AMERICAN OFFICE 1530 O’BRIEN DRIVE • MENLO PARK • CA 94025 • USA
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MET-US-001
MX-500
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Untitled
Abstract: No abstract text available
Text: _ i _ s-RAYTHEON/ bb SEMICONDUCTOR d e Its ^ L iO DOOSOñi O T - 3 7~<5Product Specifications Sm all Signal Transistors G A PNP Raytheon Low Level, General Purpose Amplifiers and Switches Description G A PNP General purpose low power amplifier and
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OCR Scan
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100mA.
2N3250A/JAN
2N3251A/JAN
5-1022A
DDDS01S
27BSC
254BSC
050BSC
100BSC
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PDF
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FE3A
Abstract: No abstract text available
Text: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 3.0 Amperes FEATURES Case Style G4 ♦ ♦ ♦ ♦ ♦ ».0 2 5 4 MIN 0 .115 (2 9) DIA ♦ ♦ ♦ ♦ A n . 0.300 (7 6 ) MAX VLJ High temperature metallurgically bonded construction
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MIL-S-19500
FE3A
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PDF
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100000XX
Abstract: HS7541AKN
Text: C ir N A v W I ^WCorporation V ▼f A SIGNAL PROCESSING EXCELLENCE HS7541A 12-BIT CMOS MULTIPLYING DAC FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ +0.5 LSB DNL a n d INL High Stability, S egm ented A rch ite ctu re 3 MSB's Proprietary, Low TCR Thin-Fiim Resistor
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HS7541A
12-BIT
AD7541/7541A
HS7541A
100000XX
HS7541AKN
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S h ee t M T D 3N 25E TM O S E-FET™ P ow er Field E ffe c t T ran sisto r DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FE T
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3N25E
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Untitled
Abstract: No abstract text available
Text: £ HV9120 HV9123 S u p e r t e x in c . ^ P re lim in ary High-Voltage Current-Mode PWM Controller Ordering Information M ax D u ty C yc le 16 P in P la s tic D IP P a c k a g e O p tio n s 2 0 Pin P la s tic P L C C 16 Pin C e ra m ic D IP D IC E 4 9% H V 9120P
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HV9120
HV9123
9120P
V9123P
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PDF
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2n3499
Abstract: No abstract text available
Text: RAYTHEON/ SEM ICO ND UC TO R T4 CC □□□5551 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS RAYTHEON. DËÏ7ST73bD High Voltage General Purpose Amplifiers and Switches NPN Description Popular Types General purpose am plifier and switch for high voltage applications. The
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7ST73bD
2N3501/JAN
2N3500/JAN
2N3499/JAN
2N3498/JAN
2N3440
Min00
508BSC
100BSC
200BSC
2n3499
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50p03h
Abstract: 50p03hdl TP50P03 50p03
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s Data S h ee t M TP50P03HDL HD TM O S E -FE T " P o w er Field E ffe c t T ran sisto r M o to ro la P re fe rre d D e v ic e P-Channel Enhancement-Mode Silicon Gate L O G IC LE V E L T h is a d v a n c e d h ig h - c e ll d e n s ity H D T M O S p o w e r F E T is
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TP50P03H
50p03h
50p03hdl
TP50P03
50p03
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Untitled
Abstract: No abstract text available
Text: h a h a r r is M - 6 5 0 8 /8 8 3 1024 x 1 CMOS RAM June 1989 P in o u t Features • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y .50 iW M ax.
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180ns
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PDF
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C127
Abstract: C127F IEC134
Text: N AI1ER PHILIPS/DISCRETE ObE D bbS3T31 □011107 Ö • C127 SERIES 2 -J S '- / THYRISTORS l i L h . l 2 7 setriest devices arf g l a f Passivated thyristors fe a tu rin g a llo y bonding, thus being particu larly suitable in situations creating high fa tig u e stresses involved in th erm al cycling and repeated switching.
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C127F,
C127F
C127
IEC134
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PDF
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20N03
Abstract: 20n03h
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD20N03HDL HDTM O S E -FE T High D en sity P o w er FET DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS R DS on = 0-035 OHM
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1N50E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D a ta S heet M T D 1N 50E TM O S E -F E T ™ P o w er Field E ffe c t T ran sisto r DPAK for S u rfa c e M ount N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n
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fe6d
Abstract: No abstract text available
Text: FE6A THRU FE6D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 6.0 Amperes FEATURES Case Style G4 I V J ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 0 3 0 0 7 6 MAX V i i High temperature m etallurgical^ bonded construction
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lL-S-19500
MIL-STD-750,
fe6d
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PDF
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m8208
Abstract: M8206 MB209 m820 M8202 MB200 MB201 MB202 MB206 MB207
Text: lì llH ì M MicrosemiCorp. MB200 thru MB206 MB207 thiru MB213 illlliliSliillll R E C TIFIE R S FEATURES • M icrom iniature package. • Voidless herm etically sealed glass package. • Triple layer passivation. • M eta llu rgica l^ bonded. • Ultra fast recovery.
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MB200
MB206
MB207
MB213
MIL-S-19500
MIL-STD-75CI.
AVER90
MB211
MB213
979-B220
m8208
M8206
MB209
m820
M8202
MB201
MB202
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D15N06V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device T M O S P O W E R FET 15 A M P E R E S 60 V O LTS N-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area p rod u ct a b o u t o n e -h a lt th a t of sta n d ard M O SFETs. This
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Untitled
Abstract: No abstract text available
Text: a h a r r is H M - 6 5 1 8 /8 8 3 1024 x 1 CMOS RAM June 1 9 8 9 P in o u t Features • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully Conform ant U nder the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y .50|iW M ax.
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180ns
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PDF
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NS01A
Abstract: CCD145DC
Text: LDRAL Fairchild Imaging Sensors CCD145 2048-Element Linear Image Sensor FEATURES • 2048 « 1 photosite array ■ 13^m « 13^m photosites on 13/jm pitch ■ Anti-blooming and integration control ■ Enhanced Spectral Response particularly in the blue region
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CCD145
2048-Element
13/jm
2048-elem
S571fllfl
NS01A
CCD145DC
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