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    onsemi MTB50P03HDLT4G

    MOSFET P-CH 30V 50A D2PAK
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    DigiKey MTB50P03HDLT4G Cut Tape 12,884 1
    • 1 $5.37
    • 10 $3.578
    • 100 $2.5605
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    MTB50P03HDLT4G Digi-Reel 12,884 1
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    MTB50P03HDLT4G Reel 12,800 800
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    Newark MTB50P03HDLT4G Cut Tape 781 1
    • 1 $2.94
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    Bristol Electronics MTB50P03HDLT4G 38
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    ComSIT USA MTB50P03HDLT4G 33
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    NexGen Digital MTB50P03HDLT4G 1
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    Avnet Silica MTB50P03HDLT4G 143 Weeks 800
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    EBV Elektronik MTB50P03HDLT4G 143 Weeks 800
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    Vyrian MTB50P03HDLT4G 6,578
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    ROHM Semiconductor RRS050P03HZGTB

    AUTOMOTIVE PCH -30V -5A POWER MO
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    DigiKey RRS050P03HZGTB Digi-Reel 2,276 1
    • 1 $1.8
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    • 100 $0.7798
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    RRS050P03HZGTB Cut Tape 2,276 1
    • 1 $1.8
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    RRS050P03HZGTB Reel 2,500
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    Mouser Electronics RRS050P03HZGTB 2,485
    • 1 $1.71
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    • 100 $0.754
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    Newark RRS050P03HZGTB Cut Tape 2,397 1
    • 1 $1.78
    • 10 $1.15
    • 100 $0.784
    • 1000 $0.573
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    Avnet Asia RRS050P03HZGTB 24 Weeks 2,500
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    Avnet Silica RRS050P03HZGTB 19 Weeks 2,500
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    Chip One Stop RRS050P03HZGTB Cut Tape 2,489 0 Weeks, 1 Days 5
    • 1 -
    • 10 $1.5
    • 100 $0.663
    • 1000 $0.484
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    onsemi MTP50P03HDL

    MOSFET P-CH 30V 50A TO220AB
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    Chip 1 Exchange MTP50P03HDL 125
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    onsemi MTB50P03HDLG

    MOSFET P-CH 30V 50A D2PAK
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    Vyrian MTB50P03HDLG 234
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    onsemi MTP50P03HDLG

    MOSFET P-CH 30V 50A TO220AB
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    Newark MTP50P03HDLG Bulk 250
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    Bristol Electronics MTP50P03HDLG 932
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    Avnet Silica MTP50P03HDLG 143 Weeks 50
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    EBV Elektronik MTP50P03HDLG 143 Weeks 50
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    Find more 50P03H price and stock on Findchips.com

    50P03H Datasheets Context Search

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    50p03hg

    Abstract: 50p03h MTB50P03HG MTB50P03HDL 50p03 AN569 MTB50P03HDLG MTB50P03HDLT4 MTB50P03HDLT4G
    Text: 50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		MTB50P03HDL MTB50P03HDL/D 50p03hg 50p03h MTB50P03HG MTB50P03HDL 50p03 AN569 MTB50P03HDLG MTB50P03HDLT4 MTB50P03HDLT4G PDF

    50P03HG

    Abstract: No abstract text available
    Text: 50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		MTB50P03HDL MTB50P03HDL/D 50P03HG PDF

    50P03HG

    Abstract: 50p03h
    Text: 50P03HDL, 50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		MTB50P03HDL, MVB50P03HDLT4G MTB50P03HDL/D 50P03HG 50p03h PDF

    50p03h

    Abstract: 50p03hdl TP50P03 50p03
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s Data S h ee t M 50P03HDL HD TM O S E -FE T " P o w er Field E ffe c t T ran sisto r M o to ro la P re fe rre d D e v ic e P-Channel Enhancement-Mode Silicon Gate L O G IC LE V E L T h is a d v a n c e d h ig h - c e ll d e n s ity H D T M O S p o w e r F E T is


    OCR Scan     		TP50P03H 50p03h 50p03hdl TP50P03 50p03 PDF