2N117
Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
Text: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory
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MIL-S-19500/2B
MfL-S-19500/2A
MfL-S-19500/35B
2N117.
2N118,
2N119
2NI17
2N117
2N118
2N119
2N11R
Cmd 2026
B-IA8
Transistor hall
2S50
9w9w
knb 1532
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LM 3041
Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.
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2N326
5961-0021-s)
LM 3041
2N325
2N326
TRANSISTOR C 2026
c 2026 y transistor
MC 340 transistor
c 3076
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zener 431
Abstract: 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526
Text: 2848352 DIODE TRANSISTOR CO A4 DE|afl4flBS2 DDDGltM 4 INC 84D 00 164 D T ‘ tl- ¿>1 | LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage
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250uA
Coefficient01
1N5546
1N6082
1N6083
1N6084
1N6085
1N6086
1N6087
1N6088
zener 431
1N5518
1N5519
1N5520
1N5521
1N5522
1N5523
1N5524
1N5525
1N5526
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Low Noise Zener Diode
Abstract: 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524
Text: 2848352 AM DIODE BE | 2 0 4 3 3 5 5 TRANSISTOR CO DOGGl t M 84D INC 00 164 D T *• û I M f LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage
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4fl355
1N5518
250uA
1N6082-43
1N6083
1N6084-51
IN6085
1N6086
1N6087
N6088
Low Noise Zener Diode
1N5527
zener 431
1N5518
1N5519
1N5520
1N5521
1N5522
1N5523
1N5524
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Untitled
Abstract: No abstract text available
Text: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor
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UF2805B
680pf
B20pf
UF2805B
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MRF586
Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
Text: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and
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MRF586
MRF587
5-10pF
15kHz
MRF506
Motorola AR 164
MRF587
MRF587 equivalent
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MJE2901
Abstract: mje2801 TO-225AB
Text: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS
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MJE2801,
MJE2801T
MJE2901
35-Watts
O-225AB
JWJE2801T
O-220AB
MJE2801/MJE2801T
MJE2901
mje2801
TO-225AB
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2N6767
Abstract: No abstract text available
Text: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.
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supplie-1064
2N6767
2N6768
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chip die hp transistor
Abstract: No abstract text available
Text: Whol H EW LETT wLKM PA CK A RD MGA-63100 Medium Power 2 Stage GaAs FET Cascade Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 22 dBm typical Pi cmat 14 GHz High Gain: 10.5 dB typical Gi dB at 14 GHz Single Supply Bias
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MGA-63100
chip die hp transistor
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av dam he ne
Abstract: No abstract text available
Text: H IG H V O L T A G E P O W E R O P E R A T IO N A L A IV IP L ÎP IE R PA44 M I C R O T E C H N O L O G Y h t t p ://WWW.APEXMICRDTECH.OOM 800 5 4 6 -APEX (800) 546-2739 FEATURE • SURFACE MOUNT PACKAGE • MCNGUTHI CMOS TECHNOLOGY • LCWOCOT • • •
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ON--350V
PA44UREV
av dam he ne
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GE opto detector
Abstract: No abstract text available
Text: SFH6943 Infineon Low Current Input Mini Optocoupler technologies ' Dimensions in Inches mm J l Anode i2 * n r Anode 2 .016 (.41) Common 3 1 i Cathode V Ce = 5 V Anode 4 L I • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS
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SFH6943
1-888-lnfineon
GE opto detector
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2SC4813
Abstract: VDF pn C40r
Text: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è
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2SC4813
2SC4813
D15603JJ2V0DS00
TC-7819)
VDF pn
C40r
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TC-7986A
Abstract: 2SK2112 CMS01 7986A diode lt 0236
Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,
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2SK2112
oeTi14
a-Ti4S24#
TC-7986A
CMS01
7986A
diode lt 0236
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Untitled
Abstract: No abstract text available
Text: R F RF2423 H MICRO DEVICES 100m W SPREAD-SPECTRUM TR A NSM ITTER 1C Typ ical A p plications • Digital and Analog Communication Systems • GMSK, QPSK, DQPSK, QAM Modulation • Spread Spectrum Communication Systems • AM, SSB, DSB Modulation • Portable Battery Powered Equipment
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RF2423
F2423
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Untitled
Abstract: No abstract text available
Text: WJ-PA5 / SMPA5 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH THIRD ORDER IP.: +35 dBm TYP. HIGH OUTPUT POWER: +25 dBm (TYP.) LOW VSWR: < 1.5:1 (TYP.) OPERATION FROM +12 Vdc TO +15 Vdc : ;i-4* ¡ ¡ ¡ ¡ ill
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50-QHM
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ATF-45100
Abstract: ATF 45100 ATF45100 ATF45100-GP6
Text: HEULETT-PACKARD/ Wam H E W L E T T mLfim P A C K A R D CMPNTS b lE D • M 4 4 7 S S 4 □ 0 0 cl cî S 4 ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Features 3T7 ■ Chip Outline • High Output Power: 29.0 dBm typical Pi <ra at 4 GHz
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M447SÃ
ATF-45100
AT-8151)
ATF-45100
passivat-127
ATF 45100
ATF45100
ATF45100-GP6
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WJ-CRA36
Abstract: No abstract text available
Text: ujU RA36 / SMRA36 100 to 2000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE in s u r f a c e m o u n t HIGH GAIN-THREE STAGES: 24.0 dB TYR LOW VSWR: 1.4:1 (TYR) MEDIUM OUTPUT LEVEL: +13.0 dBm (TYR) WIDE BANDWIDTH: 50-2100 MHz (TYR) Outline Drawings
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SMRA36
1-800-WJ1-4401
WJ-CRA36
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Standish LCD
Abstract: STANDISH LCD DISPLAYS hamlin lcd hamlin 3909 3900-365-920 HD61100 3940-365-920 10.1 inch lcd with led backlight 40 pin connector pinout 3902-365-920 SIM204DSHWLE4
Text: Representing Electronic Components http://www.csc-intl.com • a n a d ia n S o u r c e C o r p o r a t io n Winnipeg Tel: 204 897-4401 Fax: (204) 897-3181 Ottawa Tel: (613) 592-5641 Fax: (905) 415-1953 Toronto Head Office Tel: (905) 415-1951 Fax:(905)415-1953
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11III
W7514
Standish LCD
STANDISH LCD DISPLAYS
hamlin lcd
hamlin 3909
3900-365-920
HD61100
3940-365-920
10.1 inch lcd with led backlight 40 pin connector pinout
3902-365-920
SIM204DSHWLE4
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2N760A
Abstract: MC 331 transistor 2N757A transistor WFA 2N759A 945 U3d marking MIL-S-19500/218
Text: MIL-S-19500/218A 23 November 1966 SUPEKSMJING M IL-S-19500/218 SigC 11 October 1961 (See 6 .4) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N750A AND 2N760A This specification is mandatory for use by a ll Depart
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MIL-S-19500/218A
MIL-S-19500/218
2N757A,
2N759A
2N760A
2N757A
2N760A
MC 331 transistor
transistor WFA
945 U3d marking
MIL-S-19500/218
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2SJ411
Abstract: TC-8022 ru 4c diode
Text: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0
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2SJ411
IEI-620)
2SJ411
TC-8022
ru 4c diode
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57774 220 DESCRIPTION 2 2 5 M H z , 2 5 W , FM M O B ILE RADIO OUTLINE DRAWING The M57774 is a th ic k film RF power module o f 220 ~ 225MHz, 30W o u tp u t, specifically designed fo r 220 ~ 225MHz, 25W FM m obile radios. FEATURES
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M57774
M57774
225MHz,
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plji
Abstract: UES2602 UES2603 UE52603 UES2601 UES2601HR2 UES2601R UES2602HR2 UES2603HR2
Text: RECTIFIERS [j|g g g High Efficiency, 30ACenter-Tap UES2603 UES2601HR2 UES2602HR2 UES2603HR2 FE A TU R ES • Very Low Forward V oltage D E S C R IP T IO N T his series com bines tw o high efficiency • • • • • • devices into one package, sim plifying
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UES2603
UES2601HR2
UES2602HR2
UES2603HR2
UES2601,
UES2601HR2.
UES2602.
UES2602HR2
UES2603,
plji
UES2602
UES2603
UE52603
UES2601
UES2601R
UES2603HR2
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ic f2114
Abstract: schematics for a PA amplifier RF2114 uhf linear amplifier
Text: RFEÜ RF2114 M ICRO-DEVICES M E D IU M POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • Commercial and Consumer Systems
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RF2114
RF2114
RF2114_
150MHz
ic f2114
schematics for a PA amplifier
uhf linear amplifier
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Untitled
Abstract: No abstract text available
Text: uuU RA46 / SMRA46 1000 to 4000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH GAIN: 25.5 dB (TYR) HIGH OUTPUT POWER: +19.0 dBm (TYR) LOW NOISE: 4.5 dB (TYR) Outline Drawings RA46 Specifications*
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SMRA46
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