Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NCHANNEL MARKING CODE 3N Search Results

    NCHANNEL MARKING CODE 3N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    NCHANNEL MARKING CODE 3N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3n40

    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N40 FDU3N40 FDU3N40 FDD3N40TF FDD3N40TM 3n40

    3n50c

    Abstract: No abstract text available
    Text: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		PDF FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQU3N50C FQU3N50CTU 3n50c

    3N80C

    Abstract: FQPF*3N80C DATE CODE FAIRCHILD
    Text: TM FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP3N80C/FQPF3N80C O-220 FQPF3N80C O-220F-3 FQPF3N80CYDTU 3N80C FQPF*3N80C DATE CODE FAIRCHILD

    13N06

    Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
    Text: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6


    Original     		PDF ME4N20 ME4N20-F* ME8N06E O-252* 3N06E ME13NOGE-F* ME4P06 ME4P06-F* ME8P06 ME8P06-F* 13N06 8N06 13N06E 13-N06 13n0 4N20 ldo25 smd marking QTA

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN3051L AEC-Q10

    CHL8510

    Abstract: IR3537 CHL8316
    Text: 12V High Performance Gate Driver FEATURES IR3537 CHL8510 DESCRIPTION • Drives both high-side and low-side MOSFETs in a synchronous buck configuration  Large drivers designed to drive 6nF server class FETs o Low-side driver – 4A source / 6A sink o High-side driver – 3A source / 4A sink


    Original     		PDF IR3537 CHL8510 200kHz IR3537 10-pin CHL8510 CHL8316

    CHL8510

    Abstract: No abstract text available
    Text: 12V High Performance Gate Driver FEATURES IR3537 CHL8510 DESCRIPTION • Drives both high-side and low-side MOSFETs in a synchronous buck configuration  Large drivers designed to drive 6nF server class FETs o Low-side driver – 4A source / 6A sink o High-side driver – 3A source / 4A sink


    Original     		PDF IR3537 CHL8510 200kHz 10-pin CHL8510

    Untitled

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 30 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage


    Original     		PDF DMN3115UDM AEC-Q101 OT-26 J-STD-020C DS31187

    marking 3N1

    Abstract: DMN3115UDM
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V


    Original     		PDF DMN3115UDM AEC-Q101 OT-26 J-STD-020C DS31187 marking 3N1 DMN3115UDM

    ECG transistor replacement guide book free

    Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
    Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a


    Original     		PDF UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673

    C 38 marking code diode

    Abstract: DS31523
    Text: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • Mechanical Data • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance


    Original     		PDF DMN3051LDM AEC-Q101 OT-26 OT-26 J-STD-020D MIL-STD-202, DS31523 C 38 marking code diode

    DMN3051LDM

    Abstract: J-STD-020D
    Text: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PROD UCT • • • • • • Mechanical Data • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance


    Original     		PDF DMN3051LDM AEC-Q101 OT-26 J-STD-020D MIL-STD-202, DS31523 DMN3051LDM J-STD-020D

    DMN3051L

    Abstract: J-STD-020D
    Text: DMN3051L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 38mΩ @ VGS = 10V, ID = 5.8A


    Original     		PDF DMN3051L AEC-Q101 OT-23 J-STD-020D DS31347 DMN3051L J-STD-020D

    DMN3050S

    Abstract: J-STD-020D
    Text: DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3050S OT-23 J-STD-020D MIL-STD-202, DS31503 DMN3050S J-STD-020D

    marking 3N1

    Abstract: DMN3115UDM
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3115UDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31187 marking 3N1 DMN3115UDM

    DMN3051LDM

    Abstract: No abstract text available
    Text: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3051LDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31523 DMN3051LDM

    Untitled

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate


    Original     		PDF DMN3115UDM AEC-Q101 J-STD-020 MIL-STD-202, DS31187

    Untitled

    Abstract: No abstract text available
    Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate


    Original     		PDF DMN3115UDM AEC-Q101 J-STD-020 DS31187

    Untitled

    Abstract: No abstract text available
    Text: DMN3051LDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • Low On-Resistance • 38 mΩ @ VGS = 10V • 64 mΩ @ VGS = 4.5V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant Note 2 "Green" Device (Note 3)


    Original     		PDF DMN3051LDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31523

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3404L DMN3050S OT-23 OT-23 J-STD-020D MIL-STD-202, DS31503

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN, USE DMN3404L DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3404L DMN3050S OT-23 OT-23 J-STD-020D MIL-STD-202, DS31503

    03n60

    Abstract: H03N60 H03N60E H03N60F transistor 100A 3N60
    Text: HI-SINCERITY Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H03N60 Series H03N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200602 H03N60 O-220AB 200oC 183oC 217oC 260oC 245oC 10sec 03n60 H03N60E H03N60F transistor 100A 3N60

    MOSFET MARKING 3F

    Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
    Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A BT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 BS817 BS850 MOSFET MARKING 3F sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23

    marking code ce SOT23

    Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
    Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A IMBT/MMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 Appl45 80jjs; marking code ce SOT23 MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE