diode 944 lg
Abstract: B301A ga331 LT 943 diode 945 lg
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this
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GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
20nst
GA300,
diode 944 lg
B301A
ga331
LT 943
diode 945 lg
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P6002AD
Abstract: 1600VAC teccor Invensys
Text: TECCOR E L E C T RO N I C S 1 2 3 ´$µ3DFNDJH 0RGLILHG72 P6002AD HDWXUHV • Bidirectional transient voltage protection • Clamping speed of nanoseconds • Surge current capability 300A, 10 x 1000µs and 1000A, 2 x 10µs • Glass passivated junctions for superior reliability
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0RGLILHG72
P6002AD
P6002AD
1600VAC
teccor
Invensys
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three phase full wave uncontrolled rectifier
Abstract: S10A3100 S10A320 S10A340 S10A360 S10A380
Text: S10A320 S10A340 S10A360 S10A380 S10A3100 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1046, REV. - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 200/400/600/800/1000 VOLT, 11 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY.
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S10A320
S10A340
S10A360
S10A380
S10A3100
three phase full wave uncontrolled rectifier
S10A3100
S10A320
S10A340
S10A360
S10A380
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Untitled
Abstract: No abstract text available
Text: I teccor Mill ELECTRONICS, INC. DO-214AA SIDACtmr" Solid State Overvoltage Protection Features • Bidirectional transient voltage protection • Clamping speed of nanoseconds • Surge current capability - 500A, 2x10ns waveform • Available on tape and reel
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DO-214AA
2x10ns
DO-214AA
P1800SC
50VDC
10x1000
T0-220
ADSL-0197
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Untitled
Abstract: No abstract text available
Text: MURHF860CT Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Times
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MURHF860CT
MURHF860CT/D
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nec 2401
Abstract: 400P DE375-102N10A Directed Energy
Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR
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DE375-102N10A
nec 2401
400P
DE375-102N10A
Directed Energy
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DYMEC 5024
Abstract: 74hcl 741C1 74hci 3B10 3B14 74HCT244 74HCT245 74HCT688 xt winchester
Text: MODEL: 5024 24-Bit Programmable Counter/Timer time base. The time base can range from hundreds of nanoseconds to tens o f seconds, with specific time values depending upon the frequency o f a timing reference. The timing reference for the counter/timer may be either a
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24-Bit
50MHz,
10MHz
10X10'
200mS
7-X10X10
DYMEC 5024
74hcl
741C1
74hci
3B10
3B14
74HCT244
74HCT245
74HCT688
xt winchester
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Untitled
Abstract: No abstract text available
Text: 57C4502-50/65/80 High Density First-in First-out FIFO 1024x9 CMOS Memory cn ~>l O Advance Information DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum
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57C4502-50/65/80
1024x9
57C4502
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Untitled
Abstract: No abstract text available
Text: 57C4501-50/65/80 a High Density First-in First-out FIFO 512x9 CMOS Memory Ol Advance Information •*1 DISTINCTIVE CHARACTERISTICS RAM based FIFO 512x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum
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57C4501-50/65/80
512x9
57C4501
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AM7203
Abstract: No abstract text available
Text: Advance Information a Advanced Micro Devices Am7203-40/50/65/80 High Density First-in First-out FIFO 2048x9 CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO Status flags - full, half-full, empty • 2048x9 organization Retransmit capability • Cycle times of 50/65/80/100 nanoseconds
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Am7203-40/50/65/80
2048x9
Am7203
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Untitled
Abstract: No abstract text available
Text: 57 C4500-40/50/65/80 High Density First-in First-out FIFO 256x9 CMOS Memory A d van ce Inform ation DISTINCTIVE CHARACTERISTICS RAM based FIFO 256x9 organization Cycle times of 50/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum
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C4500-40/50/65/80
256x9
57C4500
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Untitled
Abstract: No abstract text available
Text: 67C4503-35/50/65/80 Deep First-in First-out FIFO 2048x9 C M O S Memory DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable in both width an djlepth Increased noise immunity for XI-CMOS threshold RAM based FIFO 2048x9 organization Cycle tim es of 45/65/80/100 nanoseconds
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67C4503-35/50/65/80
2048x9
67C4503
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Untitled
Abstract: No abstract text available
Text: DL1L series, SIP thin film delay lines This series permits a timing adjustment from 0.1 to 10 nanoseconds with accuracy of +/-0.05 nanoseconds. Return losses remain as stable as 20dB. SPECIFICATIONS Mechanical Time Delay Time Delay Tolerance H 7.50max 0.1ϳ1.2ns
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50max
00max
54max
20dBrcuit
150ppm/
100mA
50VDC
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DDD111G
Abstract: No abstract text available
Text: b3E D AMERICAN/ELECTRONIC • Db7la743 D D O l l Q ^ 010 « E D I 300 NANOSECOND AT 200°C HIGH TEMPERATURE— FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES • Exceptional high temperature stability up to 200°C • Exceptional low leakage no leakage drift at these elevated temperatures. All diodes are subjected to 10 test
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Gb7b743
DDD111G
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indalloy 8
Abstract: MA4AGP907 MA4AGP907-T MA4AGP907-W
Text: AlGaAs Flip-Chip PIN Diode MA4AGP907 V1 Features Package Outline • • • • • • • Top View Shown Is With Diode Junction Up Low Series Resistance, 3 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed
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MA4AGP907
MA4AGP907
indalloy 8
MA4AGP907-T
MA4AGP907-W
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SW-338
Abstract: M513 MASWSS0180 MASWSS0180SMB MASWSS0180TR SPDT Terminated Switch
Text: RoHS Compliant GaAs SPDT Terminated Switch DC - 2.5 GHz Features • • • • • • • • • • MASWSS0180 V1 Functional Schematic Very Low Power Consumption High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed
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MASWSS0180
SW-338
MASWSS0180
SW-338
M513
MASWSS0180SMB
MASWSS0180TR
SPDT Terminated Switch
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MA4AGSBP907
Abstract: MA4AGSBP907-T MA4AGSBP907-W Low Forward Voltage Diode
Text: AlGaAs Solder Bump Flip-Chip PIN Diode MA4AGSBP907 Rev 2.0 Features • Low Series Resistance, 4 Ω • Ultra Low Capacitance, 25 fF • High Switching Cutoff Frequency, 40 GHz • 2 Nanosecond Switching Speed • Can be Driven by Buffered TTL • Silicon Nitride Passivation
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MA4AGSBP907
MA4AGSBP907
MA4AGSBP907-T
MA4AGSBP907-W
MA4AGSBP907-T
MA4AGSBP907-W
Low Forward Voltage Diode
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MURD310
Abstract: MURD305 MURD315 MURD320 motorola dpak 305
Text: IMOTOROLA m SEMICONDUCTOR TECHNICAL DATA Switehmode Power MURD305 MuRD3~o MURD345~?’t$ , MURQ~zO ,+,‘Q3 Z? Rectifiers DPAK Surface Mount Package .designed these for use in switching state-of-the-art @ Ultrafast devices 35 Nanosecond @ Low Forward
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MURD305
MURD345
81akelands
MK145BP,
MURD310
MURD315
MURD320
MURD310
MURD305
MURD315
MURD320
motorola dpak 305
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Diode LT 432
Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device
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GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
GA300,
Diode LT 432
rgk 20/2
GA301A
CA301A
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GA201
Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
Text: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level
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GA200
GB200
GA200A
GB200A
GA201
GB201
GA201A
GB201A
GA/GB200
GB200
GB200A
GB201
GB201A
GR201A
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DE275X2-102N06A
Abstract: 102N06 DE275X2 102N06A 400P DE-27
Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in
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DE275X2-102N06A
DE275X2-102N06A
102N06
DE275X2
102N06A
400P
DE-27
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Untitled
Abstract: No abstract text available
Text: Attenuators 0.5 - 26 GHz - Digitally Stepped 4 Bit - 50 nanoseconds Specifications: Frequency Range: 0.5 -18.0 GHz, 2.0-6.0 GHz, 6.0-18.0 GHz, and 1.0-26.0 GHz Attenuation Steps: 2,4 ,8 ,1 6 , and 30dB total Impedance: so Ohms VSWR: 1.70 max @ .5-8.0 GHz, and 2.0 max @ 8.0-26.0 GHz
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MIL-C-287430-SMA-79
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Untitled
Abstract: No abstract text available
Text: Attenuators DC - 2.5 GHz - Digitally Stepped 4 Bit or 6 Bit - 50 nanoseconds Specifications: Frequency Range: DC - 2.5 GHz Attenuation Steps: 2, 4, 8,16, and 30 dB total for 4 Bit Model 2, 4, 8,16, 32, and 62 dB total for 6 Bit Model Impedance: so Ohms VSWR: 1.50-max to 500 MHz and 2.0 max @ 500 -1 GHz ' -Insertion Loss: 0.5 dB max
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50-max
MIL-C-28748
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Untitled
Abstract: No abstract text available
Text: Cable Assemblies Coaxial Delay Lines Custom Delay Line Assemblies • 5 ,1 0, 25, 50, and 100 nanosecond Delay •Calibration Standards ■Spooled, Encapsulated or Packaged ■N, TNC, and SMA Connectors Midwest Microwaveoffers standard as well as custom coaxial delay
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2-025-X
2-050-XY
2-100-XY
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