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    P6002AD

    Abstract: 1600VAC teccor Invensys
    Text: TECCOR E L E C T RO N I C S 1 2 3 ´$µ3DFNDJH 0RGLILHG72 P6002AD HDWXUHV • Bidirectional transient voltage protection • Clamping speed of nanoseconds • Surge current capability 300A, 10 x 1000µs and 1000A, 2 x 10µs • Glass passivated junctions for superior reliability


    Original     		PDF 0RGLILHG72 P6002AD P6002AD 1600VAC teccor Invensys

    three phase full wave uncontrolled rectifier

    Abstract: S10A3100 S10A320 S10A340 S10A360 S10A380
    Text: S10A320 S10A340 S10A360 S10A380 S10A3100 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1046, REV. - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 200/400/600/800/1000 VOLT, 11 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY.


    Original     		PDF S10A320 S10A340 S10A360 S10A380 S10A3100 three phase full wave uncontrolled rectifier S10A3100 S10A320 S10A340 S10A360 S10A380

    Untitled

    Abstract: No abstract text available
    Text: MURHF860CT Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Times


    Original     		PDF MURHF860CT MURHF860CT/D

    nec 2401

    Abstract: 400P DE375-102N10A Directed Energy
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy

    Untitled

    Abstract: No abstract text available
    Text: DL1L series, SIP thin film delay lines This series permits a timing adjustment from 0.1 to 10 nanoseconds with accuracy of +/-0.05 nanoseconds. Return losses remain as stable as 20dB. SPECIFICATIONS Mechanical Time Delay Time Delay Tolerance H 7.50max 0.1ϳ1.2ns


    Original     		PDF 50max 00max 54max 20dBrcuit 150ppm/ 100mA 50VDC

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS GA300, GA300A, GA301, GA301A SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		PDF GA300, GA300A, GA301, GA301A MIL-PRF-19500, GA300 GA300A GA301

    indalloy 8

    Abstract: MA4AGP907 MA4AGP907-T MA4AGP907-W
    Text: AlGaAs Flip-Chip PIN Diode MA4AGP907 V1 Features Package Outline • • • • • • • Top View Shown Is With Diode Junction Up Low Series Resistance, 3 Ω Ultra Low Capacitance, 25 fF High Switching Cutoff Frequency, 40 GHz 2 Nanosecond Switching Speed


    Original     		PDF MA4AGP907 MA4AGP907 indalloy 8 MA4AGP907-T MA4AGP907-W

    SW-338

    Abstract: M513 MASWSS0180 MASWSS0180SMB MASWSS0180TR SPDT Terminated Switch
    Text: RoHS Compliant GaAs SPDT Terminated Switch DC - 2.5 GHz Features • • • • • • • • • • MASWSS0180 V1 Functional Schematic Very Low Power Consumption High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed


    Original     		PDF MASWSS0180 SW-338 MASWSS0180 SW-338 M513 MASWSS0180SMB MASWSS0180TR SPDT Terminated Switch

    MA4AGSBP907

    Abstract: MA4AGSBP907-T MA4AGSBP907-W Low Forward Voltage Diode
    Text: AlGaAs Solder Bump Flip-Chip PIN Diode MA4AGSBP907 Rev 2.0 Features • Low Series Resistance, 4 Ω • Ultra Low Capacitance, 25 fF • High Switching Cutoff Frequency, 40 GHz • 2 Nanosecond Switching Speed • Can be Driven by Buffered TTL • Silicon Nitride Passivation


    Original     		PDF MA4AGSBP907 MA4AGSBP907 MA4AGSBP907-T MA4AGSBP907-W MA4AGSBP907-T MA4AGSBP907-W Low Forward Voltage Diode

    MURD310

    Abstract: MURD305 MURD315 MURD320 motorola dpak 305
    Text: IMOTOROLA m SEMICONDUCTOR TECHNICAL DATA Switehmode Power MURD305 MuRD3~o MURD345~?’t$ , MURQ~zO ,+,‘Q3 Z? Rectifiers DPAK Surface Mount Package .designed these for use in switching state-of-the-art @ Ultrafast devices 35 Nanosecond @ Low Forward


    Original     		PDF MURD305 MURD345 81akelands MK145BP, MURD310 MURD315 MURD320 MURD310 MURD305 MURD315 MURD320 motorola dpak 305

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27

    diode 944 lg

    Abstract: B301A ga331 LT 943 diode 945 lg
    Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this


    OCR Scan     		PDF GA300 GA300A GA301 GA301A GB300 GB300A GB301 GB301A 20nst GA300, diode 944 lg B301A ga331 LT 943 diode 945 lg

    Untitled

    Abstract: No abstract text available
    Text: I teccor Mill ELECTRONICS, INC. DO-214AA SIDACtmr" Solid State Overvoltage Protection Features • Bidirectional transient voltage protection • Clamping speed of nanoseconds • Surge current capability - 500A, 2x10ns waveform • Available on tape and reel


    OCR Scan     		PDF DO-214AA 2x10ns DO-214AA P1800SC 50VDC 10x1000 T0-220 ADSL-0197

    DYMEC 5024

    Abstract: 74hcl 741C1 74hci 3B10 3B14 74HCT244 74HCT245 74HCT688 xt winchester
    Text: MODEL: 5024 24-Bit Programmable Counter/Timer time base. The time base can range from hundreds of nanoseconds to tens o f seconds, with specific time values depending upon the frequency o f a timing reference. The timing reference for the counter/timer may be either a


    OCR Scan     		PDF 24-Bit 50MHz, 10MHz 10X10' 200mS 7-X10X10 DYMEC 5024 74hcl 741C1 74hci 3B10 3B14 74HCT244 74HCT245 74HCT688 xt winchester

    Untitled

    Abstract: No abstract text available
    Text: 57C4501-50/65/80 a High Density First-in First-out FIFO 512x9 CMOS Memory Ol Advance Information •*1 DISTINCTIVE CHARACTERISTICS RAM based FIFO 512x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum


    OCR Scan     		PDF 57C4501-50/65/80 512x9 57C4501

    AM7203

    Abstract: No abstract text available
    Text: Advance Information a Advanced Micro Devices Am7203-40/50/65/80 High Density First-in First-out FIFO 2048x9 CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO Status flags - full, half-full, empty • 2048x9 organization Retransmit capability • Cycle times of 50/65/80/100 nanoseconds


    OCR Scan     		PDF Am7203-40/50/65/80 2048x9 Am7203

    Untitled

    Abstract: No abstract text available
    Text: 57 C4500-40/50/65/80 High Density First-in First-out FIFO 256x9 CMOS Memory A d van ce Inform ation DISTINCTIVE CHARACTERISTICS RAM based FIFO 256x9 organization Cycle times of 50/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum


    OCR Scan     		PDF C4500-40/50/65/80 256x9 57C4500

    Untitled

    Abstract: No abstract text available
    Text: 67C4503-35/50/65/80 Deep First-in First-out FIFO 2048x9 C M O S Memory DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable in both width an djlepth Increased noise immunity for XI-CMOS threshold RAM based FIFO 2048x9 organization Cycle tim es of 45/65/80/100 nanoseconds


    OCR Scan     		PDF 67C4503-35/50/65/80 2048x9 67C4503

    DDD111G

    Abstract: No abstract text available
    Text: b3E D AMERICAN/ELECTRONIC • Db7la743 D D O l l Q ^ 010 « E D I 300 NANOSECOND AT 200°C HIGH TEMPERATURE— FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES • Exceptional high temperature stability up to 200°C • Exceptional low leakage no leakage drift at these elevated temperatures. All diodes are subjected to 10 test


    OCR Scan     		PDF Gb7b743 DDD111G

    Diode LT 432

    Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
    Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device


    OCR Scan     		PDF GA300 GA300A GA301 GA301A GB300 GB300A GB301 GB301A GA300, Diode LT 432 rgk 20/2 GA301A CA301A

    GA201

    Abstract: GA201A GA200 GA200A GB200 GB200A GB201 GB201A GR201A
    Text: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level


    OCR Scan     		PDF GA200 GB200 GA200A GB200A GA201 GB201 GA201A GB201A GA/GB200 GB200 GB200A GB201 GB201A GR201A

    Untitled

    Abstract: No abstract text available
    Text: Attenuators 0.5 - 26 GHz - Digitally Stepped 4 Bit - 50 nanoseconds Specifications: Frequency Range: 0.5 -18.0 GHz, 2.0-6.0 GHz, 6.0-18.0 GHz, and 1.0-26.0 GHz Attenuation Steps: 2,4 ,8 ,1 6 , and 30dB total Impedance: so Ohms VSWR: 1.70 max @ .5-8.0 GHz, and 2.0 max @ 8.0-26.0 GHz


    OCR Scan     		PDF MIL-C-287430-SMA-79

    Untitled

    Abstract: No abstract text available
    Text: Attenuators DC - 2.5 GHz - Digitally Stepped 4 Bit or 6 Bit - 50 nanoseconds Specifications: Frequency Range: DC - 2.5 GHz Attenuation Steps: 2, 4, 8,16, and 30 dB total for 4 Bit Model 2, 4, 8,16, 32, and 62 dB total for 6 Bit Model Impedance: so Ohms VSWR: 1.50-max to 500 MHz and 2.0 max @ 500 -1 GHz ' -Insertion Loss: 0.5 dB max


    OCR Scan     		PDF 50-max MIL-C-28748

    Untitled

    Abstract: No abstract text available
    Text: Cable Assemblies Coaxial Delay Lines Custom Delay Line Assemblies • 5 ,1 0, 25, 50, and 100 nanosecond Delay •Calibration Standards ■Spooled, Encapsulated or Packaged ■N, TNC, and SMA Connectors Midwest Microwaveoffers standard as well as custom coaxial delay


    OCR Scan     		PDF 2-025-X 2-050-XY 2-100-XY