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    NAND FLASH MEMORY PACKAGE TYPE Search Results

    NAND FLASH MEMORY PACKAGE TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    NAND FLASH MEMORY PACKAGE TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nand512w3a2dn6

    Abstract: NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E
    Text: product line card Numonyx NAND flash memory Numonyx® NAND flash memory A broad offering of discrete parts to meet a variety of application requirements PRODUCT overview Density Part Number Density NAND Family Voltage Bus Width - Flash Package Type Package Dimension


    Original     		PDF NAND128W3A2BN6E TSOP48 12x20mm NAND128W3A0BN6E NAND128W3A2BDI6 NAND256W3A2BN6E nand512w3a2dn6 NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E

    TFBGA107

    Abstract: ddr flash "ready not busy" BGA bga 10x13 NAND FLASH BGA NAND*N M65KA512AB NAND01G-N NAND01GR3N6 NAND01GR4N5 NAND01G
    Text: NAND01G-N 1 Gbit x8/x16 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory


    Original     		PDF NAND01G-N x8/x16) TFBGA107 ddr flash "ready not busy" BGA bga 10x13 NAND FLASH BGA NAND*N M65KA512AB NAND01G-N NAND01GR3N6 NAND01GR4N5 NAND01G

    NANDA9R3N

    Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
    Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		PDF 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 LFBGA137 TFBGA149 VFBGA160 VFBGA152 TFBGA152 NANDA9R3N NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM

    NANDA9R3N0

    Abstract: NANDA9R4N4 nanda8r3
    Text: NANDxxRxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features • FBGA MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 2x2-Gbit (x8/x16) large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		PDF x8/x16) 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 TFBGA149 VFBGA160 TFBGA152 NANDA9R3N0 NANDA9R4N4 nanda8r3

    MBM30AL0064

    Abstract: NAND FLASH BGA MB84VN23381EJ-90
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) NAND-Type FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VN23381EJ-90 • FEATURES — NAND-Type FLASH MEMORY • Operating Voltage:2.7V to 3.3V


    Original     		PDF MB84VN23381EJ-90 MBM30AL0064 NAND FLASH BGA MB84VN23381EJ-90

    NAND FLASH BGA

    Abstract: MB84VN23391EJ-90 MBM30AL0064
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) NAND-Type FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VN23391EJ-90 • FEATURES — NAND-Type FLASH MEMORY • Operating Voltage: 2.7V to 3.3V


    Original     		PDF MB84VN23391EJ-90 NAND FLASH BGA MB84VN23391EJ-90 MBM30AL0064

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET

    KLM8G2FE3B

    Abstract: klm8g samsung eMMC 4.5 TLC nand samsung tlc nand flash KLM4G 153 ball eMMC memory SAMSUNG emmc klm8g2 Samsung KLMBG4GE2A
    Text: Samsung eMMC Managed NAND Flash memory solution supports mobile applications FBGA QDP Package BROCHURE Efficiency, reduced costs and quicker time to market Expand device development with capable memory solutions Simplify mass storage designs Conventional NAND Flash memory can be challenging to


    Original     		PDF

    SAMSUNG MCP

    Abstract: MCP NAND
    Text: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die


    Original     		PDF K5P2881BCM 16Mx8) 512Kx16) 69-Ball SAMSUNG MCP MCP NAND

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


    Original     		PDF 168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96

    29F4G08AAA

    Abstract: 29f4g08 29f4g08A 29F4G MT29F4G08AAAWP NAND flash memory MT29F4G08 MT29F4G08A MT29F4G08AAAWC Micron NAND
    Text: 4Gb x8 NAND Flash Memory Errata Scope Errata MT29F4G08AAAWP:A Scope This errata applies exclusively to the MT29F4G08AAAWP:A, a 4Gb x8 NAND Flash memory device in a TSOP type 1 package. Terminology Errata: Design defects or errors in a published data sheet. Errata may cause


    Original     		PDF MT29F4G08AAAWP 09005aef82500baf/Source: 09005aef82500acc 29F4G08AAA 29f4g08 29f4g08A 29F4G NAND flash memory MT29F4G08 MT29F4G08A MT29F4G08AAAWC Micron NAND

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package

    MT29F1G08ABCHC

    Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
    Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:


    Original     		PDF 152-Ball MT29C 152-Ball 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29F1G08ABCHC MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr

    MT29F4G08ABA

    Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP

    MT29F4G08ABA

    Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08

    Samsung MCP

    Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
    Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF K5D5657ACM-F015 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Samsung MCP MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    SAMSUNG MCP

    Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
    Text: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00E007M-FGGV 256Mb 16Mx16) 4Mx16x4Banks) 107-Ball 80x13 SAMSUNG MCP KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball

    Flash MCp nand DRAM 107-ball

    Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
    Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00J007M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball 80x13 Flash MCp nand DRAM 107-ball dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor